SBIR Phase II: Electric-Field-Controlled Nonvolatile Magnetic Memory

SBIR 第二阶段：电场控制非易失性磁存储器

• 批准号: 1430815
• 负责人: Farbod Ebrahimi
• 金额: $ 74.97万
• 依托单位: Inston Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-10-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1430815&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Electric; Field

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project is in addressing the novel hardware challenges of energy and speed associated with big data applications. The electronics industry is quickly transforming from a compute-centric model to a data-centric model, where the key to success in the market place is the ability to store, manipulate and access large amounts of data in a fast and energy-efficient manner. The existing memory technologies cannot meet these challenges. This changing landscape offers a major potential for emerging memory technologies that can successfully address these new emerging demands. The Electric-Field-Controlled Nonvolatile Magnetic Memory technology developed under this project offers the most viable low-cost, low-power, and high-endurance solution to these new demands. Conservative estimates project a rapid growth in the emerging memory technologies market, reaching $2B in 2018. We expect that Electric-Field-Controlled Nonvolatile Magnetic Memory will be able to capture a significant part of this emerging market. More broadly, it can be used in many general computing and information processing systems, and hence it can potentially impact a major part of the $300B semiconductors industry by enabling ultra-low power green and instant-on electronic systems.This Small Business Innovation Research Phase II project will focus on the development of prototype Electric-Field-Controlled Nonvolatile Magnetic Memory chips and arrays. This memory technology uses a fundamentally new way to write information into the nonvolatile memory bits, providing major advantages in terms of power dissipation, cost, density, and scalability. This project will result in chip prototypes, providing significant advantages in terms of energy efficiency, density, and scalability when compared to alternative existing or emerging memory technologies. They also provide virtually unlimited endurance. Circuit design for memory product development will also be performed, as well as modeling in support of circuit development and device optimization.

这个小企业创新研究（SBIR）第二阶段项目的更广泛的影响/商业潜力是解决与大数据应用相关的能源和速度的新硬件挑战。电子行业正在迅速从以计算为中心的模式转变为以数据为中心的模式，在这种模式下，在市场上取得成功的关键是能够以快速和节能的方式存储、操作和访问大量数据。现有的存储技术无法应对这些挑战。这种不断变化的环境为新兴的存储技术提供了巨大的潜力，这些技术可以成功地满足这些新兴的需求。该项目开发的电场控制非易失性磁存储技术为这些新需求提供了最可行的低成本、低功耗和高耐用性解决方案。保守估计，新兴内存技术市场将快速增长，到2018年将达到20亿美元。我们预计，电场控制非易失性磁存储器将能够占据这一新兴市场的重要部分。更广泛地说，它可以用于许多通用计算和信息处理系统，因此它可以通过实现超低功耗、绿色和即时启动的电子系统，潜在地影响3000亿美元半导体行业的主要部分。这个小型企业创新研究第二阶段项目将重点开发原型电场控制非易失性磁存储芯片和阵列。这种存储器技术使用一种全新的方式将信息写入非易失性存储器位，在功耗、成本、密度和可伸缩性方面具有主要优势。该项目将产生芯片原型，与现有或新兴的替代存储技术相比，在能效、密度和可扩展性方面具有显著优势。它们还提供了几乎无限的耐力。还将进行存储产品开发的电路设计，以及支持电路开发和器件优化的建模。