RF-MEMScomponents, M-systems and hybrid integration

RF-MEMS 组件、M 系统和混合集成

• 批准号: 216628823
• 负责人: Professor Dr.-Ing. Martin Hoffmann
• 金额: --
• 依托单位: Lehrstuhl für Mikrosystemtechnik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/216628823?language=en
• 关键词: RF; MEMScomponents; systems; hybrid; integration

Part C1 of the research group MUSIK is responsible for the process integration and realization of RF MEMS devices into the silicon-LTCC substrate SiCer based on co-sintered silicon and LTCC with a unique nanostructured interface. SiCer is a joint invention of part C1 (silicon handling) and C2 (LTCC handling). In phase 2 the primary aim of this part C1 is the realization of the complete systems integration of a complex MUSIK RF demonstrator on SiCer substrate. For this, the technological platform for RF and MEMS components established in phase 1 is extended in a way that it allows the simultaneous manufacturing of all components and functional blocks on a single SiCer substrate in an integrated process. It should be highlighted that not only standard Si MEMS but also piezoelectric aluminum nitride (AlN) layers as active elements for e.g. resonators are included into this integrated process flow. This allows for a parallel integration of MEMS for switching, tuning and oscillating functional blocks into thesilicon of SiCer substrates. Besides applications for low RF signals (as in phase 1) these functions are extended for higher RF power levels in phase 2 (as required for transmitters) and thus a higher complexity of the circuits is required. Besides the development of suitable technological process integration a number of samples of functional blocks and of the demonstrator system are realized. This also includes a cooling of power components by using silicon-based structures as well as a direct electrical contacting of RF MEMS to the LTCC (without additional bond wires). In both cases, this is performed in close cooperation with part C2. Including also part C3 allows for a joint design and layout for LTCC and silicon pre and post processing based on the multiphysical synthesis as required for layout verification. Parallel to this, a number of iterative test structures is evaluated and realized in SiCer technology. This allows the project groups A and B an early verification of non-ideal effects of single mechanical systems (as shown in the networking matrix). These results will be used for an optimized modelling and system synthesis.

MUSIK研究小组的C1部分负责将RF MEMS器件集成到硅-LTCC衬底SiCer中的工艺集成和实现，SiCer基于具有独特纳米结构界面的共烧结硅和LTCC。SiCer是C1部分（硅处理）和C2部分（LTCC处理）的联合发明。在第二阶段，C1部分的主要目标是在SiCer衬底上实现复杂MUSIK RF演示器的完整系统集成。为此，在第一阶段建立的RF和MEMS组件技术平台得到了扩展，允许在集成工艺中在单个SiCer衬底上同时制造所有组件和功能块。应该强调的是，不仅标准Si MEMS，而且压电氮化铝（AlN）层作为用于例如谐振器的有源元件被包括在该集成工艺流程中。这允许将用于开关、调谐和振荡功能块的MEMS并行集成到SiCer衬底的硅中。除了用于低RF信号的应用（如在阶段1中）之外，这些功能在阶段2中被扩展用于更高的RF功率电平（如发射机所要求的），并且因此需要更高的电路复杂度。除了开发合适的工艺流程集成外，还实现了许多功能块和演示系统的示例。这还包括通过使用硅基结构来冷却功率部件以及RF MEMS与LTCC的直接电接触（无需额外的键合线）。在这两种情况下，这都是与C2部分密切合作进行的。还包括C3部分，允许根据布局验证的需要，基于多物理合成进行LTCC和硅预处理和后处理的联合设计和布局。与此同时，一些迭代测试结构的评估和实现SiCer技术。这使得项目组A和B能够早期验证单个机械系统的非理想效应（如网络矩阵所示）。这些结果将用于优化建模和系统综合。