Electrically Pumped complementary-metal-oxide-semiconductor (CMOS)-compatible two-dimensional transition metal dichalcogenide materials nanolasers

电泵浦互补金属氧化物半导体（CMOS）兼容的二维过渡金属二硫属化物材料纳米激光器

• 批准号: 1508856
• 负责人: Linyou Cao
• 金额: $ 33.27万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1508856&HistoricalAwards=false
• 关键词: Electrically; Pumped; complementary; metal; oxide

Abstract Title: Electrically Pumped complementary-metal-oxide-semiconductor (CMOS)-compatible two-dimensional transition metal dichalcogenide materials nanolasersNon-technical: This project addresses the biggest challenge for the development of chip-scale optical interconnects. Chip-scale optical interconnects, which relies on optics process instead of electrical wires for intra-chip communication, is believed able to overcome all the problems of the existing electrical interconnects and substantially improve the speed of computers. The broad impact of this project to society is obvious given the importance of computers at every aspect of human society. The research component of this project is integrated into multifaceted educational and outreach activities that aim to inspire students (high school, undergraduate, and graduate), underrepresented minorities in particular, to pursue careers in the science technology engineering and mathematics (STEM) disciplines and aim to enhance the secondary school and university curricula in materials science. In addition to providing research training for students at both undergraduate and graduate levels, the education plan includes mentoring high school students to participate in pre-college scientific competitions and guest lectures in high schools AP chemistry classes. The proposed research may also provide students with unique opportunities to develop solid expertise that will be valuable for their careers in science and engineering. Technical: This project is to develop electrically pumped nano-lasers with centimeter-scale two-dimensional (2D) MoSe2 monolayers grown on silicon-based substrates. The 2D materials provide opportunity to break away from the requirement of lattice matching to enable high-quality integration of luminescence materials with silicon for lasing. It can be integrated to substrates with arbitrary lattice mismatch without compromising crystalline quality because the materials may only interact with substrates by weak van der Waals forces, which can substantially relax the requirement of lattice matching. We will develop techniques that can be used to grow centimeter-scale, high-quality, and uniform MoSe2 monolayers on silicon substrates and will pursue fundamental understanding for the photophysics and lasing dynamics of the synthesized monolayers. By leveraging on the fundamental understanding, we will design a prototype electrically pumped CMOS-compatible 2D MoSe2 lasers with nanoscale footprints.

摘要标题：电泵浦互补金属氧化物半导体（CMOS）兼容的二维过渡金属二硫属化物材料纳米激光器非技术：该项目解决了芯片级光学互连开发的最大挑战。芯片级光互连技术是一种依靠光学工艺而不是电路来实现芯片内部通信的技术，它可以克服现有电互连技术存在的所有问题，大大提高计算机的速度。鉴于计算机在人类社会各个方面的重要性，该项目对社会的广泛影响是显而易见的。该项目的研究部分被纳入多方面的教育和外联活动，旨在激励学生（高中、本科和研究生），特别是代表性不足的少数群体，追求科学技术工程和数学学科的职业生涯，并旨在加强中学和大学的材料科学课程。除了为本科生和研究生提供研究培训外，该教育计划还包括指导高中生参加大学预科科学竞赛和高中AP化学课程的客座讲座。 拟议的研究还可以为学生提供独特的机会，以发展坚实的专业知识，这将是他们在科学和工程事业的价值。技术支持：该项目旨在开发在硅基衬底上生长的厘米级二维（2D）MoSe 2单层的电泵浦纳米激光器。 2D材料提供了摆脱晶格匹配要求的机会，以实现发光材料与硅的高质量集成以用于激光发射。它可以集成到具有任意晶格失配的衬底上，而不损害晶体质量，因为材料可以仅通过弱的货车范德华力与衬底相互作用，这可以基本上放松晶格匹配的要求。 我们将开发可用于在硅衬底上生长厘米级，高质量和均匀的MoSe2单层的技术，并将追求对合成单层的物理学和激光动力学的基本理解。通过利用基本的理解，我们将设计一个原型电泵浦CMOS兼容的2D MoSe2激光器与纳米尺度的足迹。