GOALI: Nanoparticle Luminescence Thermometry with 10 nm Resolution for Challenging Environments

首席研究人员建议解决下一代硬盘驱动器成功的关键需求所产生的问题。这个问题涉及到一种在硬盘驱动器上测量纳米级温度的技术，在硬盘驱动器上发生故障的地方，到目前为止还没有完成。研究伙伴包括来自工业界(希捷公司)、加州大学伯克利分校机械工程系和劳伦斯伯克利国家实验室的研究人员。与加州大学伯克利分校和当地高中的学生环境能源开发(SEED)小组的互动将使用现有的计划进行。这个GALI项目建议使用光致发光纳米颗粒来测量大约10纳米空间分辨率的温度。如此高的空间分辨率是受到行业(希捷)对名为HAMR(热辅助磁记录)的新一代硬盘驱动器技术需求的启发，该技术中的设备故障与纳米级区域的温度有关。初步结果证明了光致发光技术在温度测量方面的潜力。光致发光发射的光谱形状和寿命将作为局部温度的函数进行关联。实验和建模将被用来理解工业合作伙伴希捷正在开发的HAMR。虽然这些能力针对的是希捷的HAMR应用，但它们将广泛适用于纳米级的各种热测量挑战，包括单个电池内的热表征，以及其他商业纳米级设备，如晶体管、存储器或光电子设备。

The principal investigator proposes to solve an issue that arises from a critical need in the success of the next-generation hard drive. The issue involves a technique for measuring temperature at nano-scales on the hard drive, where failure occurs, that has so far not been done. The research partnership involves researchers from industry (Seagate Corporation), University of California - Berkeley's Mechanical Engineering Department and Lawrence Berkeley National Laboratory. Engagement with the Students for Environmental Energy Development (SEED) group at UC-Berkeley and local high schools will be conducted using the existing program. This GOALI project proposes to use photoluminescence nanoparticles to measure temperature at around 10 nm spatial resolutions. Such a high spatial resolution is inspired by the industry's (Seagate) need in a new generation hard drive technology called HAMR (heat-assisted magnetic recording) where the device failure has to do with temperature at nanoscale regions. Preliminary results have demonstrated the potential of the photoluminescence technique for temperature measurement. The spectral shape and lifetime of photoluminescence emission will be correlated as a function of local temperature. Experiments along with modeling will be used to understand HAMR being developed by Seagate, the industrial partner. Although targeting Seagate's HAMR application, these capabilities would be broadly applicable to all sorts of thermal measurement challenges at the nanoscale, including thermal characterization inside a single cell, and of other commercial nanoscale devices such as transistors, memory, or optoelectronics.