The 42nd Intl Symp. on Compound Semiconductors 27th Intl Conf. on Indium Phosphide and Related Materials June 28- July 2, 2015; University of California, Santa Barbara
第 42 届国际症状。
基本信息
- 批准号:1547129
- 负责人:
- 金额:$ 1.01万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2015
- 资助国家:美国
- 起止时间:2015-07-01 至 2015-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The 42nd International Symposium on Compound Semiconductors - 27th International Conference on Indium Phosphide and Related Materials (ISCS/IPRM 2015: Compound Semiconductor Week) covers the field of III-V, II-VI, and IV-IV semiconductors. It addresses III-V and II-VI compound semiconductors as well as SiGe, SiC, and related alloys and has opened up to novel materials such as oxide semiconductors, organic semiconductors and aspects of heterogeneous integration, e.g. of compound semiconductors with Si-based technology. The ISCS series was started in 1966 under the name of "International Symposium on GaAs and Related Compounds" and the current name and co-location with IPRM reflects the broadening of the conference scope due to the wide variety of compound semiconductors vital for modern electronic and optoelectronic devices. This Symposium is expected to have attendance of approximately 300 including attendees from Americas, Europe and Asia. All types of research institutions (academia, government research institutes and industrial laboratories) will be represented. The support funds will be used towards conference proceedings, subsidizing registration fees for students and invited speakers. The timing of this workshop is perfect for this generation of students to learn how the new science and technology of semiconductors is developing. These lessons will be useful beyond semiconductor research, as these students will be able to apply them to any future new materials and technologies that they will encounter during their career.
第42届化合物半导体国际研讨会-第27届磷化铟及相关材料国际会议(ISCS/IPRM 2015:化合物半导体周)涵盖III-V,II-VI和IV-IV半导体领域。它涉及III-V族和II-VI族化合物半导体以及SiGe、SiC和相关合金,并开辟了氧化物半导体、有机半导体和异质集成方面的新材料,例如具有Si基技术的化合物半导体。ISCS系列始于1966年,当时的名称是“GaAs及相关化合物国际研讨会”,目前的名称和与IPRM的共同位置反映了会议范围的扩大,因为各种化合物半导体对现代电子和光电器件至关重要。预计本次研讨会将有约300人出席,其中包括来自美洲、欧洲和亚洲的与会者。所有类型的研究机构(学术界、政府研究机构和工业实验室)都将派代表参加。资助资金将用于会议程序,补贴学生和受邀演讲者的注册费。本次研讨会的时机非常适合这一代学生学习半导体新科学和技术的发展。这些课程将是有用的半导体研究之外,因为这些学生将能够将其应用到任何未来的新材料和技术,他们将在他们的职业生涯中遇到。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Umesh Mishra其他文献
Delignification kinetics, colloidal behaviour, and cost–benefit analysis of cellulose nanofiber from Imperata cylindrica
白茅纤维素纳米纤维的脱木质素动力学、胶体行为和成本效益分析
- DOI:
10.1007/s13399-022-03450-9 - 发表时间:
2022 - 期刊:
- 影响因子:4
- 作者:
R. Majumdar;Umesh Mishra;Nibedita Mahata;A. Mondal;Biswanath Bhunia - 通讯作者:
Biswanath Bhunia
Innovations in GaN Four Quadrant Switch technology
GaN四象限开关技术的创新
- DOI:
10.1109/wipda58524.2023.10382202 - 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
G. Gupta;Carl Neufeld;D. Bisi;Yulu Huang;B. Cruse;Peter Smith;R. Lal;Umesh Mishra - 通讯作者:
Umesh Mishra
Enhancing soil moisture prediction with explainable AI: Integrating IoT and multi-sensor remote sensing data through soft computing
利用可解释的人工智能增强土壤水分预测:通过软计算整合物联网和多传感器遥感数据
- DOI:
10.1016/j.asoc.2025.113406 - 发表时间:
2025-08-01 - 期刊:
- 影响因子:6.600
- 作者:
Santanu Mallik;Abhigyan Chakraborty;Krishanu Podder;Swapan Talukdar;Atiqur Rahman;Umesh Mishra - 通讯作者:
Umesh Mishra
Comprehensive assessment of emE. coli/em dynamics in river water using advanced machine learning and explainable AI
运用先进机器学习和可解释人工智能对河水中大肠杆菌动态进行综合评估
- DOI:
10.1016/j.psep.2025.106816 - 发表时间:
2025-03-01 - 期刊:
- 影响因子:7.800
- 作者:
Santanu Mallik;Bodhipriya Saha;Krishanu Podder;Muthusivaramapandian Muthuraj;Umesh Mishra;Sharbari Deb - 通讯作者:
Sharbari Deb
Experimental study and ANN verification of chemically carbonized Hevea brasiliensis sawdust for adsorption of hexavalent chromium
化学炭化巴西橡胶木屑吸附六价铬的实验研究及人工神经网络验证
- DOI:
10.1007/s13399-024-05797-7 - 发表时间:
2024 - 期刊:
- 影响因子:4
- 作者:
Swarup Biswas;Bibhab Kumar Lodh;Joydeep Das;Soma Nag;Umesh Mishra - 通讯作者:
Umesh Mishra
Umesh Mishra的其他文献
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{{ truncateString('Umesh Mishra', 18)}}的其他基金
GaN Vacuum Microelectronics Electron Emitter with IntegratedExtractor
具有集成提取器的 GaN 真空微电子电子发射器
- 批准号:
9528606 - 财政年份:1995
- 资助金额:
$ 1.01万 - 项目类别:
Standard Grant
Presidential Young Investigators Award: mm-Wave Devices and Integration Techniques
总统青年研究员奖:毫米波器件和集成技术
- 批准号:
9144723 - 财政年份:1991
- 资助金额:
$ 1.01万 - 项目类别:
Continuing Grant
Presidential Young Investigators Award: mm-Wave Devices and Integration Techniques
总统青年研究员奖:毫米波器件和集成技术
- 批准号:
8958322 - 财政年份:1989
- 资助金额:
$ 1.01万 - 项目类别:
Continuing Grant
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