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The 42nd Intl Symp. on Compound Semiconductors 27th Intl Conf. on Indium Phosphide and Related Materials June 28- July 2, 2015; University of California, Santa Barbara

The 42nd Intl Symp. on Compound Semiconductors 27th Intl Conf. on Indium Phosphide and Related Materials June 28- July 2, 2015; University of California, Santa Barbara
第 42 届国际症状。
批准号:
1547129
负责人:
Umesh Mishra
金额:
$1.01万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-07-01 至 2015-12-31

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中文摘要
翻译
第42届国际化合物半导体研讨会-第27届国际磷化铟及相关材料会议(ISCS/IPRM 2015:化合物半导体周)涵盖III-V, II-VI和IV-IV半导体领域。它解决了III-V和II-VI化合物半导体以及SiGe, SiC和相关合金,并开辟了新的材料,如氧化物半导体,有机半导体和异质集成方面,例如硅基技术的化合物半导体。ISCS系列于1966年以“GaAs及相关化合物国际研讨会”的名义开始,目前的名称和与IPRM的共同位置反映了会议范围的扩大,因为各种各样的化合物半导体对现代电子和光电子器件至关重要。本次研讨会预计将有大约300人出席,其中包括来自美洲、欧洲和亚洲的与会者。所有类型的研究机构(学术界、政府研究机构和工业实验室)都将有代表参加。支持资金将用于会议程序,补贴学生和特邀演讲者的注册费。这次研讨会的时机对于这一代学生来说是完美的,他们可以了解半导体的新科学和技术是如何发展的。这些课程将在半导体研究之外有用,因为这些学生将能够将其应用于他们在职业生涯中遇到的任何未来新材料和技术。
英文摘要
The 42nd International Symposium on Compound Semiconductors - 27th International Conference on Indium Phosphide and Related Materials (ISCS/IPRM 2015: Compound Semiconductor Week) covers the field of III-V, II-VI, and IV-IV semiconductors. It addresses III-V and II-VI compound semiconductors as well as SiGe, SiC, and related alloys and has opened up to novel materials such as oxide semiconductors, organic semiconductors and aspects of heterogeneous integration, e.g. of compound semiconductors with Si-based technology. The ISCS series was started in 1966 under the name of "International Symposium on GaAs and Related Compounds" and the current name and co-location with IPRM reflects the broadening of the conference scope due to the wide variety of compound semiconductors vital for modern electronic and optoelectronic devices. This Symposium is expected to have attendance of approximately 300 including attendees from Americas, Europe and Asia. All types of research institutions (academia, government research institutes and industrial laboratories) will be represented. The support funds will be used towards conference proceedings, subsidizing registration fees for students and invited speakers. The timing of this workshop is perfect for this generation of students to learn how the new science and technology of semiconductors is developing. These lessons will be useful beyond semiconductor research, as these students will be able to apply them to any future new materials and technologies that they will encounter during their career.
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GaN Vacuum Microelectronics Electron Emitter with IntegratedExtractor
Presidential Young Investigators Award: mm-Wave Devices and Integration Techniques
Presidential Young Investigators Award: mm-Wave Devices and Integration Techniques
  • 批准号:
    8958322
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $2.5万
  • 财政年份:
    1989
  • 负责人:
    Umesh Mishra
  • 依托单位:
海外基金