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The 42nd Intl Symp. on Compound Semiconductors 27th Intl Conf. on Indium Phosphide and Related Materials June 28- July 2, 2015; University of California, Santa Barbara

The 42nd Intl Symp. on Compound Semiconductors 27th Intl Conf. on Indium Phosphide and Related Materials June 28- July 2, 2015; University of California, Santa Barbara
第 42 届国际症状。
批准号:
1547129
负责人:
Umesh Mishra
金额:
$1.01万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-07-01 至 2015-12-31

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中文摘要
翻译
第42届化合物半导体国际研讨会-第27届国际磷化铟及相关材料国际会议(ISCS/IPRM 2015:化合物半导体周)涵盖了III-V、II-VI和IV-IV半导体领域。它涉及III-V和II-VI化合物半导体以及SiGe、碳化硅和相关合金,并向氧化物半导体、有机半导体和异质集成方面开辟了新途径,例如采用硅基技术的化合物半导体。ISCS系列会议始于1966年,名称为“国际砷化镓及相关化合物研讨会”,目前的名称和与IPRM的共址反映了会议范围的扩大,因为对现代电子和光电设备至关重要的化合物半导体种类繁多。本次研讨会预计将有大约300人出席,其中包括来自美洲、欧洲和亚洲的与会者。所有类型的研究机构(学术界、政府研究机构和工业实验室)都将派代表参加。支助资金将用于会议活动,补贴学生和特邀演讲者的注册费。举办这个研讨会的时机对这一代学生来说是完美的,让他们了解半导体新科学技术是如何发展的。这些课程将不仅适用于半导体研究,因为这些学生将能够将它们应用于他们在职业生涯中将遇到的任何未来的新材料和技术。
英文摘要
The 42nd International Symposium on Compound Semiconductors - 27th International Conference on Indium Phosphide and Related Materials (ISCS/IPRM 2015: Compound Semiconductor Week) covers the field of III-V, II-VI, and IV-IV semiconductors. It addresses III-V and II-VI compound semiconductors as well as SiGe, SiC, and related alloys and has opened up to novel materials such as oxide semiconductors, organic semiconductors and aspects of heterogeneous integration, e.g. of compound semiconductors with Si-based technology. The ISCS series was started in 1966 under the name of "International Symposium on GaAs and Related Compounds" and the current name and co-location with IPRM reflects the broadening of the conference scope due to the wide variety of compound semiconductors vital for modern electronic and optoelectronic devices. This Symposium is expected to have attendance of approximately 300 including attendees from Americas, Europe and Asia. All types of research institutions (academia, government research institutes and industrial laboratories) will be represented. The support funds will be used towards conference proceedings, subsidizing registration fees for students and invited speakers. The timing of this workshop is perfect for this generation of students to learn how the new science and technology of semiconductors is developing. These lessons will be useful beyond semiconductor research, as these students will be able to apply them to any future new materials and technologies that they will encounter during their career.
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GaN Vacuum Microelectronics Electron Emitter with IntegratedExtractor
Presidential Young Investigators Award: mm-Wave Devices and Integration Techniques
Presidential Young Investigators Award: mm-Wave Devices and Integration Techniques
  • 批准号:
    8958322
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $2.5万
  • 财政年份:
    1989
  • 负责人:
    Umesh Mishra
  • 依托单位:
海外基金