GaN Vacuum Microelectronics Electron Emitter with IntegratedExtractor

具有集成提取器的 GaN 真空微电子电子发射器

• 批准号: 9528606
• 负责人: Umesh Mishra
• 金额: $ 5万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-01 至 1996-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9528606&HistoricalAwards=false
• 关键词: GaN; Vacuum; Microelectronics; Electron; Emitter

9528606 Mishra In recent years, vacuum microelectronic devices (VMDs) have become of great interest in the fields such as high speed, high power devices and flat panel displays, because of they combine the advantages of both vacuum tubes and modern semiconductor devices. The key to the success of vacuum microelectronics is the fabrication of the solid-state electron emitters (SSEEs). For applicatimn in flat panel displays, it is required that SSEEs should be stable and generate uniform electron emission with high efficiency and moderate current density. On the other hand, for applications in medium RF power amplifiers and high power RF sources, SSEEs should be very reliable and generate electron emission with high current density. Two types of SSEEs, field emitters 1 and planar emitters 2,3 have been reported in the past with some success. Field emitters, due to its intrinsic nature, have very high emission efficiency and attracted much attention in the field of flat panel displays. Much progress has been made in recent years in the development of field emitters arrays (FEAs) 4, owing to the fast advance of modern semiconductor technologies. In this proposal, we propose a GaN based field emitter and its arrays with an unique fabrication process based on reactive ion etching (RIE) and selective regrowth of GaN point or wedge emitters. ***

近年来，真空微电子器件（VMD）由于联合收割机了真空管和现代半导体器件的优点，在高速、大功率器件和平板显示器等领域引起了极大的兴趣。 真空微电子学成功的关键是固态电子发射体的制备。 为了在平板显示器中应用，要求SSEE应该是稳定的，并且在高效率和适度的电流密度下产生均匀的电子发射。 另一方面，对于中等RF功率放大器和高功率RF源中的应用，SSEE应该非常可靠并且产生具有高电流密度的电子发射。 两种类型的SSEE，场发射体1和平面发射体2、3，在过去已经报道了一些成功。 场致发射体由于其固有的性质，具有非常高的发射效率，在平板显示领域引起了广泛的关注。 由于现代半导体技术的快速发展，近年来场发射阵列（FEAs）的发展取得了很大进展。 在这个建议中，我们提出了一个GaN基场致发射体及其阵列与一个独特的制造工艺的基础上，反应离子刻蚀（RIE）和选择性再生长的GaN点或楔形发射体。 ***