SBIR Phase II: Integrated Nano-Electro-Mechanical Scanning Probes for Failure Analysis of the 10-Nanometer Node and Beyond

这个小型企业创新研究(SBIR)第二阶段项目将开发一套突破性的探测器和探测平台，并将其商业化，用于对100 nm以下的半导体器件和薄膜材料进行成像和探测，这将对传统技术提出挑战。由此产生的产品将允许客户以扫描电子显微镜(SEM)、扫描探针显微镜(SPM)和一系列基于这些技术的自动测试设备(ATE)等传统平台所需的一小部分成本和时间，在纳米级执行一系列丰富的测试。一系列行业的小型化正在以越来越微小的规模推动设备和材料的发展。包括移动设备和物联网在内的多种大规模趋势正在推动纳米级的工程量达到前所未有的水平。这在很大程度上依赖于单头扫描电子显微镜，它已经演变成一系列广泛的仪器，用于分析物理、化学和电学性质，并检测和隔离缺陷。这项工作的重点是多个集成提示(MIT)技术，它采用了一种截然不同的方法，通过一个更快、更简单、更具成本效益的平台，实现了在一微米以下的长度范围内进行更丰富的测试。鉴于资本设备的安装基数很大，我们将重点放在可插入最流行的SE和SPM的探头和适配器上。这些探头极大地扩展了现有系统的功能，并以较低的接受门槛做到了这一点，因为价格适中，并无缝集成到标准行业平台中。将开发一系列探头，以满足半导体和薄膜市场的大量需求，首先是用于薄膜电特性的4针尖设备，以及用于探测集成电路的可配置或不可配置的3-4针尖设备。它们将提供各种尺寸和几何形状，目前从数百纳米到65纳米，并在一年内扩展到10纳米以下。在第二阶段，探测器功能将得到增强，以使成像和探测与设计相结合，以在AFM模式下运行。通过与灯塔客户的共同开发，产品组合将不断扩展到更多的二维和三维几何图形。

This Small Business Innovation Research (SBIR) Phase II project will develop and commercialize a breakthrough suite of probes and probing platforms for the imaging and probing of semiconductor devices and thin film materials at scales below 100 nm, where conventional techniques are challenged. The resulting products will allow customers to perform a rich range of tests at the nano-scale at costs and times that are a small fraction of those required for conventional platforms such as scanning electron microscopes (SEM), scanning probe microscopes (SPM), and a range of automated test equipment (ATE) based on these technologies. Miniaturization across a range of sectors is driving the development of devices and materials at increasingly minute length scales. Multiple large-scale trends including mobile devices and the internet-of-things are driving an unprecedented volume of engineering at the nanoscale. Much of this is now dependent on the single-tip SPM that has evolved into a broad array of instruments for the analysis of physical, chemical and electrical properties, and to detect and isolate flaws. The Multiple Integrated Tips (MiT) technology that is the focus of this effort takes a radically different approach to enable an even richer range of tests at length scales below one micron, with a faster, simpler and much more cost-effective platform. Given a large install-base of capital equipment, we are focused on probes coupled with adapters that plug into the most popular SEMs and SPMs. These probes significantly expand the functionality of existing systems, and do this with low barriers to acceptance given modest price points and seamless integration into standard industry platforms. A portfolio of probes will be developed to address high-volume needs across the semiconductor and thin film markets, starting with 4-tip devices for the electrical characterization of thin films, and configurable or non-configurable 3-4-tip devices for probing integrated circuits. These will be offered in a variety of sizes and geometries, currently from hundreds of nm to 65 nm, and extending below 10 nanometers within a year. In Phase II, probe functionality will be enhanced to enable coupled imaging and probing with design to operate in AFM mode. The portfolio of products will be continuously expanded to additional two- and three-dimensional geometries via co-development with lighthouse customers.