SBIR Phase II: High Quality Carbon Nanotubes for Radio Frequency Applications

SBIR 第二阶段：用于射频应用的高质量碳纳米管

• 批准号: 1632566
• 负责人: Dawei Wang
• 金额: $ 75万
• 依托单位: Carbon Technology, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-15 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1632566&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Quality; Carbon

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project can be found across the semiconductor industry with its initial market in wireless communications. Due to the extraordinary properties of carbon nanotubes (CNTs), applications include low noise amplifiers (LNAs), mixers, and RF power amplifiers (PAs). Looking forward, carbon nanotube transistors (CFETs) can reshape analog radio frequency electronics, enabling the higher data rates and improved capacity demanded by next generation wireless systems due to their intrinsic linearity and associated low out of band interference . CFETs are highly efficient, dissipating less unwanted power than current state of the art technologies while handling high power levels. This translates into more battery life for mobile devices with lower cooling costs. With more linear RF transistors, many billions of dollars of spending on additional base stations, larger batteries, and radio spectrum can be avoided, at great savings to consumers and industry. More speculatively, the creation of reliable grwoth techniques for CFETs and associated manufacturing processes may offer an excellent sensor platform or better ways to form on chip interconnects. The key problems being investigating of in situ growth of high performance nanotubes are applicable to the fabrication of CNT based devices for many electronic applications.This Small Business Innovation Research (SBIR) Phase II project will develop electronic devices for radio frequency applications using carbon nanotubes (CNTs). CNTs are a one dimensional material with diameters in the nanometer range. CNTs have unique and highly desirable properties ranging from superior mobility to current carrying capability to thermal stability. Calculations show CNT amplifiers will be inherently linear with noise suppressed to the lowest possible quantum limit. These properties allow for electronic devices that will perform better than existing technologies, such as silicon and gallium arsenide. Just as importantly, the cost for making these devices will be dramatically lower due to the relatively simple method for material synthesis and device fabrication. This work will enable wafer scale arrays of high density in-situ tubes to be grown on silicon enabling the development of carbon electronic components a manner comparable to silicon devices. This work will enable cost effective wafer scale growth of devices which exploit the groundbreaking linearity that CNTs can deliver.

这个小型企业创新研究（SBIR）第二阶段项目的更广泛的影响/商业潜力可以在整个半导体行业中找到，其最初的市场是无线通信。 由于碳纳米管（CNT）的非凡特性，其应用包括低噪声放大器（LNA）、混频器和RF功率放大器（PA）。展望未来，碳纳米管晶体管（CFNTR）可以重塑模拟射频电子产品，由于其固有的线性度和相关的低带外干扰，可以实现下一代无线系统所需的更高数据速率和更高容量。CFE是高效的，在处理高功率电平的同时，比当前最先进的技术消耗更少的不必要的功率。这意味着移动的设备的电池寿命更长，冷却成本更低。使用更多的线性RF晶体管，可以避免数十亿美元的额外基站，更大的电池和无线电频谱的支出，为消费者和行业节省大量资金。更有可能的是，为CF和相关的制造工艺创造可靠的生长技术可能会提供一个优秀的传感器平台或更好的方式来形成芯片上的互连。高性能纳米管的原位生长的关键问题正在调查适用于许多电子应用的CNT基器件的制造。这个小企业创新研究（SBIR）第二阶段项目将开发用于射频应用的电子器件使用碳纳米管（CNT）。 CNT是直径在纳米范围内的一维材料。碳纳米管具有独特的和非常理想的性质，从上级迁移率到载流能力到热稳定性。 计算表明，CNT放大器将是固有的线性与噪声抑制到最低可能的量子极限。这些特性使得电子设备的性能优于现有技术，如硅和砷化镓。 同样重要的是，由于材料合成和器件制造的方法相对简单，制造这些器件的成本将大大降低。这项工作将使高密度原位管的晶圆级阵列在硅上生长，从而使碳电子元件的发展与硅器件相当。这项工作将使具有成本效益的晶圆规模增长的设备，利用突破性的线性，碳纳米管可以提供。