Advanced Nanoelectronic Device Design with Atomistic Simulations

具有原子模拟的先进纳米电子器件设计

• 批准号: 1640876
• 负责人: Gerhard Klimeck
• 金额: $ 1.27万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-09-01 至 2018-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1640876&HistoricalAwards=false
• 关键词: Advanced; Nanoelectronic; Device; Design; Atomistic

Modern CPUs are composed of billions of nanotransistors. To make these nanotransistors usable, it is essential that their performance characteristics vary minimally. However, ensuring that billions of transistors have little variation in their critical device characteristics is a huge challenge. At the scale of modern nanotransistors, even atomistic variations of the structure geometry can have a severe influence on overall device performance. This project will use the Blue Waters leadership computing system to derive new models to enable efficient reliability predictions of modern nanodevices at crucial milestones in their design. This will enable scientific and engineering based exploration of the end-of-the-roadmap device options, allowing our nation to remain the leader in semiconductor technologies. The project will use NEMO5, a software co-developed with the semiconductor industry, to propose concrete, next generation nanotransistors. Furthermore, many students will be involved in the project, contributing to the education of our nation's future generation workforce.The state-of-the art nanodevices have characteristic lengths in the order of tens or one hundred of atoms. In these dimensions, unavoidable geometry fluctuations, even if they are of the order of one or a few atoms, can significantly impact performance. Thus, the design of modern devices has to consider the sensitivity of the nanostructure to fluctuations, as well as other important parameters that are known from earlier device generations. Phonons, i.e. vibrations of atoms, around their lattice sites have a severe impact on the device performance at this scale as well. Since only a few atoms are involved in the device transport, the interaction of electrons with phonons is based on a full quantum transport method that covers small-size coherent effects such as tunneling and confinement as well as incoherent scattering on device imperfections. Although quantum transport methods that handle this are well known, their solution is notoriously numerically expensive. This project has two focal points: 1) uncertainty prediction of next-generation transistor performance due to state-of-the-art physics models including scattering and 2) accurate compact model development of semiconductor-metal interconnect resistance.

现代 CPU 由数十亿个纳米晶体管组成。为了使这些纳米晶体管可用，至关重要的是它们的性能特征变化最小。然而，确保数十亿个晶体管的关键器件特性几乎没有变化是一个巨大的挑战。在现代纳米晶体管的规模上，即使结构几何形状的原子变化也会对整体器件性能产生严重影响。 该项目将使用 Blue Waters 领先的计算系统来推导新模型，以便在现代纳米器件设计的关键里程碑上实现高效的可靠性预测。 这将使基于科学和工程的路线图终端设备选项的探索成为可能，使我们的国家能够保持半导体技术的领先地位。 该项目将使用与半导体行业共同开发的软件 NEMO5 来提出具体的下一代纳米晶体管。此外，许多学生将参与该项目，为我们国家未来一代劳动力的教育做出贡献。最先进的纳米器件具有数十或一百个原子数量级的特征长度。在这些维度中，不可避免的几何波动，即使它们是一个或几个原子的量级，也会显着影响性能。因此，现代设备的设计必须考虑纳米结构对波动的敏感性，以及早期设备中已知的其他重要参数。声子，即原子在其晶格位置周围的振动，也对这种规模的器件性能产生严重影响。由于只有少数原子参与器件传输，因此电子与声子的相互作用基于完整的量子传输方法，该方法涵盖小尺寸相干效应，例如隧道和限制以及器件缺陷上的非相干散射。尽管处理这个问题的量子传输方法是众所周知的，但它们的解决方案在数值上是非常昂贵的。 该项目有两个重点：1）由于包括散射在内的最先进的物理模型而对下一代晶体管性能进行不确定性预测；2）半导体-金属互连电阻的精确紧凑模型开发。

项目成果

Control of interlayer physics in 2H transition metal dichalcogenides

• DOI: 10.1063/1.5005958
• 发表时间: 2017-03
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Kuang-Chung Wang;T. Stanev;Daniel Valencia;J. Charles;A. Henning;V. Sangwan;A. Lahiri;Daniel F. Mejia

Quantitative Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes

GaN 基发光二极管的定量多物理量子传输建模

• 发表时间: 2018
• 期刊: Applications and materials science
• 作者: Geng, J.

Explicit screening full band quantum transport model for semiconductor nanodevices

• DOI: 10.1063/1.5031461
• 发表时间: 2018-03
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Yuanchen Chu;Prasad Sarangapani;J. Charles;Gerhard Klimeck;T. Kubis