Excellence in Research: Development of two-dimensional (2D) molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) thin-film nanomaterials and nanoelectronic devices

二维(2D)半导体纳米材料是一种很有前途的电子纳米材料，由于其优异的电学性能，有望用于未来的高速纳米电子学。本项目将采用等离子体增强原子层沉积技术生长二硫化钼(MoS_2)和钼硒(MoSe_2)半导体薄膜纳米材料。二硫化钼和钼硒薄膜纳米材料将用于制备二维纳米材料基场效应晶体管和集成电子器件。该器件制造与当前用于计算机芯片的硅集成器件的标准制造兼容，并可能导致基于2D纳米材料的计算机芯片具有更小的晶体管。半导体设备代表着一个价值数万亿美元的行业。基于二维纳米材料的纳米电子器件可以为快速发展的半导体和纳米制造产业做出贡献，是硅基电子器件的潜在替代品。这个项目可以对美国和全球社会产生巨大影响，并提供许多社会效益。该项目的主要教育目标是整合研究目标，以增强学生的教育体验。少数族裔研究生和本科生将在该项目中接受指导，进行纳米制造和纳米技术方面的研究。该项目还将为高中生提供暑期研究机会。本项目的研究目标是利用远程等离子体增强原子层沉积技术(PE-ALD)生长二维(2D)二硫化钼(MoS_2)和钼硒(MoSe_2)半导体薄膜纳米材料，并制备基于2D纳米材料的纳米电子器件。一种创新的局域生长方法将被用来生长具有更高有序纳米层和纳米结构的2D纳米材料。与传统的二维纳米材料生长在平坦光滑的衬底表面上不同，这种创新的局域化生长将使用纳米图案衬底生长具有更高有序纳米层和纳米结构的二维纳米材料，并允许像Hf_nO_2和Z_2O_3这样的衬底材料用于二维纳米材料的生长。然后，2D纳米材料将被用作有源沟道材料，利用基于净室的微和纳米制造技术来制造2D纳米材料基场效应晶体管(FET)和集成电路，如反相器和振荡器。二硫化钼和钼硒纳米材料是一种适合电子器件应用的半导体材料，具有合适的带隙，并具有独特的电学性质，如弹道量子输运，这使得基于2D纳米材料的FET具有更高的电流开关比和更快的工作速度，而不会消耗能量。建立在2D材料上的纳米电子器件为超越摩尔定律的进一步小型化提供了许多好处，并有可能为未来的电子技术带来革命性的变化。该项目具有潜在的变革性，将创造一种新的2D纳米材料和器件制造范例。该项目将为二维纳米材料和纳米电子器件的制造提供新的方法，从而极大地造福于研究界和半导体行业。创新的局域生长方法可以有效地生长具有更高有序的纳米层和纳米结构的纳米层2D薄膜材料，而远程等离子体增强原子层沉积可以提供新的机会来生长具有更好的电学性能的2D纳米材料，从而产生更高性能的功能2D纳米电子器件。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Two-dimensional (2D) semiconductor nanomaterials are promising electronic nanomaterials and could be used for future high-speed nanoelectronics because of their superior electrical properties. In this project, 2D molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) semiconductor thin-film nanomaterials will be grown using plasma-enhanced atomic layer deposition. The 2D molybdenum disulfide and molybdenum selenium thin-film nanomaterials will be used to fabricate 2D nanomaterial-based field-effect transistors and integrated electronic devices. The device fabrication is compatible with the current standard fabrication of silicon integrated devices for computer chips and could lead to 2D nanomaterial-based computer chips with much smaller transistors. Semiconductor devices represent a multi-trillion-dollar industry. The 2D nanomaterial-based nanoelectronic devices could contribute to the rapidly growing industry of semiconductor and nano-manufacturing and are potential alternatives to silicon-based electronic devices. This project can have great impacts on US and global societies and provide many societal benefits. The primary educational goal of this program is to integrate the research objectives to enhance the educational experiences of students. Minority graduate and undergraduate students will be mentored to perform research in nanofabrication and nanotechnology in the project. The project will also offer summer research opportunities for high school students. The research objective of this project is to grow two-dimensional (2D) molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) semiconductor thin-film nanomaterials using remote plasma-enhanced atomic layer deposition (PE-ALD) and fabricate 2D nanomaterial-based nanoelectronic devices. An innovative localized growth method will be used to grow the 2D nanomaterials with higher ordered nanolayers and nanostructures. Unlike the conventional growth of 2D nanomaterials which grow the nanomaterials on a flat and smooth surface of substrate, the innovative localized growth will use nano-patterned substrates to grow the 2D nanomaterials with higher-ordered nanolayers and nanostructures and would allow substrate materials such as hafnium oxide and zirconium oxide for the growth of the 2D nanomaterials. The 2D nanomaterials will then be used as the active channel material to fabricate 2D nanomaterial-based field-effect transistors (FETs) and integrated electronic circuits such as inverters and oscillators using cleanroom-based micro and nanofabrication techniques. The 2D molybdenum disulfide and molybdenum selenium nanomaterials are semiconductor materials with appropriate band gaps for electronic devices applications and have unique electrical properties such as ballistic quantum transport, which enable the 2D nanomaterial-based FETs to have higher current on/off ratios and to operate faster without energy dissipation. Nanoelectronic devices built on the 2D materials offer many benefits for further miniaturization beyond Moore’s Law and the possibility to revolutionize future electronic technologies. This project is potentially transformative and will create a new 2D nanomaterial and device fabrication paradigm. The project will greatly benefit the research community and semiconductor industry by providing new approaches for the fabrication of 2D nanomaterials and nanoelectronic devices. The innovative localized growth method can effectively grow nanolayered 2D thin-film materials with higher-ordered nanolayers and nanostructures while remote plasma-enhanced atomic layer deposition can offer new opportunities to grow 2D nanomaterials with improved electrical properties, leading to higher-performance functional 2D nanoelectronic devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.