Manipulation and spectroscopy of quantum structures on semiconductor surfaces by cryogenic scanning tunneling microscopy
Manipulation and spectroscopy of quantum structures on semiconductor surfaces by cryogenic scanning tunneling microscopy
批准号:
226562331
负责人:
Dr. Stefan Fölsch
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2013
资助国家:
德国
项目状态:
已结题
起止时间:
2012-12-31 至 2019-12-31
中文摘要
低温扫描隧道显微镜(STM)被用来在III-V半导体表面上用原子构建块组装单个纳米结构并研究它们的电子性质。构建块是单个吸附的原子和原子点缺陷,可以由STM尖端故意创建和定位。这使我们能够在半导体平台上创建最终的小结构,这些结构的大小、形状或组成没有任何随机变化。该项目的中心目标是探索定制纳米结构的特性,调整这些特性并对其进行控制。人们最感兴趣的是原子构件之间的电子相互作用,以及它们与半导体环境的相互作用。用扫描隧道谱分析了纳米结构的电子态和基本激发态,以了解它们的量子物理性质。对这些性质的基本理解对于实现基于量子效应的器件功能和电子传输的未来技术具有重要意义。
英文摘要
Cryogenic scanning tunneling microscopy (STM) is used to assemble individual nanostructures from atomic building blocks on a III-V semiconductor surface and to investigate their electronic properties. The building blocks are single adsorbed atoms and atomic point defects that can be deliberately created and positioned by the STM tip. This allows us to create ultimately small structures on semiconductor platform which are free of any stochastic variations in their size, shape, or composition. The central goal of the project is to explore the properties of tailored nanostructures, to tune these properties and to control them. Of central interest is the electronic interaction between the atomic building blocks, as well as their interaction with the semiconductor environment. The electronic states and elementary excitations of the nanostructures are analyzed by scanning tunneling spectroscopy to gain insight into their quantum-physical properties. A fundamental understanding of these properties is important for future technologies which implement device function and electronic transport based on quantum effects.
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会议论文
Scanning tunneling spectroscopy of quantum coherence phenomena due to atom-by-atom nanostructure assembly on semiconductor surfaces
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批准号:94778613
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2008
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负责人:Dr. Stefan Fölsch
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依托单位:
Artificial quantum states on semiconductor surfaces created and probed by cryogenic scanning tunneling microscopy
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批准号:437494632
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:--
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负责人:Dr. Stefan Fölsch
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依托单位:
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