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Collaborative research: Physics and Quantum Technology Applications of Defects in Silicon Carbide

合作研究：碳化硅缺陷的物理和量子技术应用

基本信息

批准号：
1737921
负责人：
Sophia Economou
金额：
$ 48.34万
依托单位：
Virginia Polytechnic Institute and State University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2018
资助国家：
美国
起止时间：
2018-09-15 至 2023-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1737921&HistoricalAwards=false
关键词：
Collaborative research Physics Quantum Technology

项目摘要

NONTECHNICAL SUMMARYThis award supports theoretical and computational research on defects in materials that are good candidates to be used for quantum computing. Silicon carbide is a promising material for quantum information processing due to its maturity in industry and compatibility with current electronic device fabrication. Defects refer to disruptions in the perfect regular array of silicon and carbon atoms in a perfect silicon carbide crystal. Promising defects include vacancies such as a silicon atom missing from a site where it is expected or a missing silicon and missing carbon atom on neighboring sites; and the presence of a nitrogen atom along with an associated vacant site. Electrons are confined to quantum mechanical states localized in a small volume. These states can be initialized, manipulated, and measured; they are promising candidates for qubits which are the quantum computer analogs of bits in ordinary computers. Defects in silicon carbide have attractive properties for a range of applications, including quantum-enhanced sensing of electric and magnetic fields, secure quantum communications over long distances, as well as quantum computation. The PIs will develop theoretical tools to understand and exploit the most promising defects in silicon carbide and assess their potential for applications. In particular, the PIs will calculate the dynamics of these defects under interaction with lasers and with static electric fields, using both computational techniques and analytical theory. This work will pave the way toward sensing applications. The properties of the emitted light will also be studied, which will lead to the design of new light-matter interfaces for long-range quantum communication networks. The interactions between the defects and their environment, including the nuclear and vibrational modes, will be calculated, and their effect on the performance of the defect will be assessed. The PIs will also investigate new ways of controlling these quantum systems. The outcomes of this research will contribute toward the development of silicon carbide based systems for powerful future quantum information technologies. This project will also contribute to educating and supporting the next generation of researchers in quantum information science and technology. Technical summaryThis award supports theoretical and computational research and education to use first principles techniques to investigate the physics and dynamics of defects in silicon carbide, including the process of spin polarization through intersystem crossing and the coupling to electric fields for sensing and spin control applications. A formalism for dynamic nuclear polarization calculations will be developed to understand existing experiments and to reveal the distinct physics of a central spin coupled to two distinct nuclear baths. The viability of silicon carbide devices for quantum communications and repeaters will be assessed. Specifically, this project will characterize spin-photon interfaces for quantum information applications by taking into account mixings of states and couplings to vibrational modes obtained from first principles calculations. Spin control techniques beyond those for qubits will be developed to exploit the silicon vacancy center with S=3/2. The theoretical results of this project will be compared to experimental data and stimulate further experimental studies. This project will also contribute to educating and supporting the next generation of researchers in quantum information science and technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术总结该奖项支持对材料缺陷的理论和计算研究，这些缺陷是用于量子计算的很好的候选材料。由于碳化硅在工业上的成熟性以及与当前电子器件制造的兼容性，它是一种很有前途的量子信息处理材料。缺陷是指完美的碳化硅晶体中硅和碳原子的完美规则阵列的破坏。有希望的缺陷包括空位，如从预期的位置缺少硅原子，或者在邻近位置缺少硅和碳原子；以及氮原子的存在以及相关的空位。电子被限制在小体积内的量子力学状态。这些状态可以被初始化、操纵和测量；它们很有希望成为量子比特的候选者，量子比特是普通计算机中比特的量子计算机类比。碳化硅中的缺陷在一系列应用中具有诱人的特性，包括对电场和磁场的量子增强传感，远距离安全量子通信，以及量子计算。PIS将开发理论工具，以了解和利用碳化硅中最有希望的缺陷，并评估其应用潜力。特别是，PI将使用计算技术和分析理论来计算这些缺陷在与激光和静电场相互作用下的动力学。这项工作将为传感应用铺平道路。还将研究发射光的性质，这将导致为远程量子通信网络设计新的光-物质接口。将计算缺陷与其环境之间的相互作用，包括原子核模式和振动模式，并将评估它们对缺陷性能的影响。PI还将研究控制这些量子系统的新方法。这项研究的成果将有助于开发基于碳化硅的系统，用于未来强大的量子信息技术。该项目还将为教育和支持量子信息科学与技术的下一代研究人员做出贡献。该奖项支持使用第一性原理技术研究碳化硅中缺陷的物理和动力学的理论和计算研究和教育，包括通过系统间交叉的自旋极化过程以及用于传感和自旋控制应用的与电场的耦合。为了理解现有的实验，并揭示中心自旋与两个不同的核浴耦合的不同物理，将发展一个动态核极化计算的形式论。将评估用于量子通信和中继器的碳化硅器件的可行性。具体地说，这个项目将通过考虑从第一性原理计算获得的状态和耦合到振动模的混合来表征用于量子信息应用的自旋-光子界面。为了利用S=3/2的硅空位中心，将开发量子比特以外的自旋控制技术。该项目的理论结果将与实验数据进行比较，并鼓励进一步的实验研究。该项目还将有助于教育和支持量子信息科学和技术的下一代研究人员。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。