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Collaborative Research: Physics and Quantum Technology Applications of Defects in Silicon Carbide

合作研究：碳化硅缺陷的物理和量子技术应用

基本信息

批准号：
1738076
负责人：
Pratibha Dev
金额：
$ 22.71万
依托单位：
Howard University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2018
资助国家：
美国
起止时间：
2018-09-15 至 2023-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1738076&HistoricalAwards=false
关键词：
Collaborative Research Physics Quantum Technology

项目摘要

NONTECHNICAL SUMMARYThis award supports theoretical and computational research on defects in materials that are good candidates to be used for quantum computing. Silicon carbide is a promising material for quantum information processing due to its maturity in industry and compatibility with current electronic device fabrication. Defects refer to disruptions in the perfect regular array of silicon and carbon atoms in a perfect silicon carbide crystal. Promising defects include vacancies such as a silicon atom missing from a site where it is expected or a missing silicon and missing carbon atom on neighboring sites; and the presence of a nitrogen atom along with an associated vacant site. Electrons are confined to quantum mechanical states localized in a small volume. These states can be initialized, manipulated, and measured; they are promising candidates for qubits which are the quantum computer analogs of bits in ordinary computers. Defects in silicon carbide have attractive properties for a range of applications, including quantum-enhanced sensing of electric and magnetic fields, secure quantum communications over long distances, as well as quantum computation. The PIs will develop theoretical tools to understand and exploit the most promising defects in silicon carbide and assess their potential for applications. In particular, the PIs will calculate the dynamics of these defects under interaction with lasers and with static electric fields, using both computational techniques and analytical theory. This work will pave the way toward sensing applications. The properties of the emitted light will also be studied, which will lead to the design of new light-matter interfaces for long-range quantum communication networks. The interactions between the defects and their environment, including the nuclear and vibrational modes, will be calculated, and their effect on the performance of the defect will be assessed. The PIs will also investigate new ways of controlling these quantum systems. The outcomes of this research will contribute toward the development of silicon carbide based systems for powerful future quantum information technologies. This project will also contribute to educating and supporting the next generation of researchers in quantum information science and technology. Technical summaryThis award supports theoretical and computational research and education to use first principles techniques to investigate the physics and dynamics of defects in silicon carbide, including the process of spin polarization through intersystem crossing and the coupling to electric fields for sensing and spin control applications. A formalism for dynamic nuclear polarization calculations will be developed to understand existing experiments and to reveal the distinct physics of a central spin coupled to two distinct nuclear baths. The viability of silicon carbide devices for quantum communications and repeaters will be assessed. Specifically, this project will characterize spin-photon interfaces for quantum information applications by taking into account mixings of states and couplings to vibrational modes obtained from first principles calculations. Spin control techniques beyond those for qubits will be developed to exploit the silicon vacancy center with S=3/2. The theoretical results of this project will be compared to experimental data and stimulate further experimental studies. This project will also contribute to educating and supporting the next generation of researchers in quantum information science and technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术总结该奖项支持对材料缺陷的理论和计算研究，这些材料是用于量子计算的良好候选者。碳化硅是一种很有前途的量子信息处理材料，由于其在工业上的成熟和与当前电子器件制造的兼容性。缺陷是指在完美的碳化硅晶体中硅和碳原子的完美规则阵列中的中断。有希望的缺陷包括空位，例如从预期的位置缺失硅原子或在相邻位置上缺失硅和缺失碳原子;以及氮原子沿着相关空位的存在。电子被限制在一个小体积内的量子力学状态。这些状态可以被初始化、操纵和测量;它们是量子比特的有希望的候选者，量子比特是普通计算机中比特的量子计算机模拟物。碳化硅中的缺陷在一系列应用中具有吸引人的特性，包括电场和磁场的量子增强传感，长距离安全量子通信以及量子计算。PI将开发理论工具来理解和利用碳化硅中最有前途的缺陷，并评估其应用潜力。特别是，PI将使用计算技术和分析理论计算这些缺陷与激光和静电场相互作用下的动力学。这项工作将为传感应用铺平道路。还将研究发射光的性质，这将导致为远程量子通信网络设计新的光-物质界面。将计算缺陷与其环境之间的相互作用，包括核和振动模式，并评估其对缺陷性能的影响。PI还将研究控制这些量子系统的新方法。这项研究的成果将有助于开发基于碳化硅的系统，用于强大的未来量子信息技术。该项目还将有助于教育和支持量子信息科学和技术的下一代研究人员。该奖项支持理论和计算研究和教育，使用第一原理技术来研究碳化硅中缺陷的物理和动力学，包括通过系统间交叉的自旋极化过程以及与传感和自旋控制应用的电场耦合。将开发动态核极化计算的形式体系，以理解现有实验并揭示与两个不同核浴耦合的中心自旋的不同物理学。将评估碳化硅器件用于量子通信和中继器的可行性。具体而言，该项目将通过考虑从第一原理计算获得的状态混合和振动模式耦合来表征量子信息应用的自旋光子界面。将开发超出量子位的自旋控制技术，以利用S = 3/2的硅空位中心。该项目的理论结果将与实验数据进行比较，并激发进一步的实验研究。该项目还将有助于教育和支持量子信息科学和技术的下一代研究人员。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。