EAGER: Hot Carrier Effects in Novel Miniaturized Gate-All-Around (GAA) Field Effect Transistors (FETs)

EAGER：新型小型化全栅 (GAA) 场效应晶体管 (FET) 中的热载流子效应

• 批准号: 1843883
• 负责人: Stephanie Weeden-Wright
• 金额: $ 11万
• 依托单位: David Lipscomb University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1843883&HistoricalAwards=false
• 关键词: EAGER; Hot; Carrier; Effects; Novel

The demand for smaller, more efficient electronics has driven commercial companies to push the limits of scaling for transistors. Devices have moved from the 2D paradigm into the 3D paradigm for single transistors on the order of tens of nanometers. Highly miniaturized devices introduce reliability concerns such as hot carrier injection, where large undesirable currents lead to overall lifetime degradation and poor performance. Engineers often use simulation tools to understand hot carrier effects in devices. In order to reduce complexity and simulation time these tools abstract away much of the detailed physics which is necessary for the complex and miniaturized novel devices used today. This work will use a novel 3D simulation approach that is able to capture the necessary detailed physics for modeling the next- generation of devices. Understanding the physics of failure for these devices will ultimately lead to smaller, cheaper and more reliable electronics for the end user. This work also has the potential to impact our understanding of complimentary devices (e.g. LEDs, Solar Cells, etc.) and has implications for the renewable energy industry, resulting in increased access to affordable, reliable and clean energy to consumers around the world.This work will use a Monte Carlo code suite with full-band capabilities to perform the first of its kind 3D model of hot carrier injection in gate-all-around field effect transistors. Anduril could prove to be the next gold standard of device simulation tools for modern 3D mianiaturized technologies. 3D simulations of hot carrier injection in stacked gate-all-around transistors will be compare to experimental characterization proposed in this work. The PI has access to vertically stacked gate-all-around transistors from imec which have been shown to have near-ideal subthreshold slopes (~67 mV/dec). With the PI?s secondary appointment she has the ability to recruit graduate talent and access to a full suite of reliability testing equipment in the Radiation and Reliability group at Vanderbilt. DC stress conditions and 1/f noise measurements will be conducted under the advisement of the PI at Vanderbilt. Additionally, simulations using the Anduril code suite will be conducted using the ACCRE super- computing cluster. Simulations will occur in phases beginning with a single gate-all-around transistor, whose reliability has been studied experimentally, and ultimately a stacked gate-all-around architecture, whose reliability is less understood. The work proposed by the PI is timely and relevant given the current trends moving to vertically stacked gate-all-around transistors, and the large knowledge gaps that still exist for understanding the physics of failure driving hot carrier degradation in these devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

对更小、更高效的电子产品的需求推动了商业公司突破晶体管规模的极限。对于几十纳米量级的单个晶体管，器件已经从2D范例转移到3D范例。高度小型化的器件引入了可靠性问题，例如热载流子注入，其中大的不期望电流导致整体寿命退化和性能差。工程师经常使用仿真工具来了解器件中的热载流子效应。为了减少复杂性和模拟时间，这些工具抽象出了许多详细的物理，这是必要的复杂和小型化的新颖设备今天使用。这项工作将使用一种新颖的三维模拟方法，能够捕捉到必要的详细物理建模的下一代设备。了解这些设备的物理故障将最终为最终用户带来更小，更便宜和更可靠的电子产品。这项工作也有可能影响我们对互补器件（例如LED，太阳能电池等）的理解。这项工作将使用具有全频带功能的蒙特卡罗代码套件来执行第一个此类3D模型，即栅极全方位场效应晶体管中的热载流子注入。Anduril可能成为现代3D微型化技术的下一个黄金标准。3D模拟的热载流子注入在堆叠栅全包围晶体管将在这项工作中提出的实验特性进行比较。PI可以使用imec的垂直堆叠栅极全包围晶体管，这些晶体管具有接近理想的亚阈值斜率（约67 mV/dec）。在私家侦探那里？她的第二次任命，她有能力招募毕业生人才，并获得一套完整的可靠性测试设备的辐射和可靠性组在范德比尔特。直流应力条件和1/f噪声测量将在范德比尔特PI的授权下进行。此外，使用Anduril代码套件的模拟将使用ACCRE超级计算集群进行。模拟将分阶段进行，从单栅全包围晶体管开始，其可靠性已经过实验研究，最终是堆叠栅全包围架构，其可靠性尚不清楚。PI提出的工作是及时的和相关的，考虑到目前的趋势转移到垂直堆叠栅极全包围晶体管，和大的知识差距，仍然存在的理解物理故障驱动热载流子退化在这些设备中。这个奖项反映了NSF的法定使命，并已被认为是值得的支持，通过评估使用基金会的知识价值和更广泛的影响审查标准。