I-Corps: Earth Abundant Antimony Chalcogenides for High Efficiency and Sustainable Thin Films Solar Cells

I-Corps:地球上丰富的锑硫属化物可用于高效和可持续的薄膜太阳能电池

基本信息

  • 批准号:
    1844210
  • 负责人:
  • 金额:
    $ 5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2018
  • 资助国家:
    美国
  • 起止时间:
    2018-10-01 至 2021-03-31
  • 项目状态:
    已结题

项目摘要

The broader impact/commercial potential of this I-Corps project is from a more cost-effective thin film technology to harvest sunlight and convert into electricity through the photovoltaic effect. The solar energy market is dominated by the crystalline silicon and cadmium telluride (CdTe) thin film solar panels. The CdTe thin-film panels require high energy consumption during manufacturing, and are constrained by the toxicity of Cd and limited earth storage of Te. The project will explore the commercial opportunities of manufacturing antimony chalcogenides thin-film solar panel with lower cost, higher efficiency, and less energy consumption for residential, commercial and utility level application. The cost of the traditional thin-film solar panel could be significantly reduced by utilizing the knowledge of increasing the thin film solar cell efficiency and developing a cost-effective earth abundant antimony chalcogenide source. The reduced solar energy cost will further boost the application of solar energy in the US and provide alternative and sustainable clean energy for the whole of society. This I-Corps project is to discover which customer segment would value the photovoltaic efficiency of the Sb2Se3 thin film solar cells such that the commercialization potential will be realized. The Sb2Se3 is antimony based chalcogenides with orthorhombic structure (non-cubic structure), which are opposite to the traditional cubic chalcogenides thin film solar cells (i.e., CdTe, CuInGaSe). These orthorhombic materials exhibit unique crystal structure which consists of quasi-one-dimensional ribbons weakly bonded by van der Waals forces, leading it to be a promising absorber material for photovoltaic application due to its properties of the high absorption coefficient, approximately 1.1 eV bandgap optimal for single junction solar cells. Sb2Se3, an earth-abundant constituent, has low toxicity and uses a low energy manufacture process. These above factors make Sb2Se3 to be a promising candidate to replace Cd, Ga/In in the commercial thin-film solar modules. These Sb2Se3 can be compatible with the traditional high throughput CdTe thin film solar cells manufacturing process. The Sb2Se3 technology provides alternative options for t lower cost solar energy in the US with a healthier environment footprint. Through the I-Corps project, the team expects to further investigate the which customer segment values this technology for thin film solar cells market.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这个I-Corps项目的更广泛的影响/商业潜力是从一个更具成本效益的薄膜技术,以收集阳光,并通过光伏效应转化为电力。太阳能市场由晶体硅和碲化镉(CdTe)薄膜太阳能电池板主导。碲化镉薄膜电池板在制造过程中需要高能耗,并且受到镉的毒性和碲有限的地球储存的限制。 该项目将探索制造锑硫属化物薄膜太阳能电池板的商业机会,以更低的成本,更高的效率和更少的能源消耗,用于住宅,商业和公用事业水平的应用。利用提高薄膜太阳能电池效率的知识和开发具有成本效益的地球丰富的锑硫属化物源,可以显著降低传统薄膜太阳能电池板的成本。太阳能成本的降低将进一步推动太阳能在美国的应用,为整个社会提供可替代和可持续的清洁能源。 该I-Corps项目旨在发现哪个客户群体会重视Sb 2Se 3薄膜太阳能电池的光伏效率,从而实现商业化潜力。Sb 2Se 3是具有正交结构(非立方结构)的锑基硫属化物,其与传统的立方硫属化物薄膜太阳能电池相反(即,CdTe、CuInGaSe)。 这些正交晶系材料具有独特的晶体结构,其由通过货车德瓦尔斯力弱键合的准一维带组成,由于其高吸收系数的性质,使其成为用于光伏应用的有前途的吸收材料,对于单结太阳能电池最佳的带隙约为1.1 eV。Sb 2Se 3是一种地球上丰富的成分,具有低毒性,并使用低能耗的制造工艺。这些因素使Sb_2Se_3成为商业薄膜太阳能组件中取代Cd、Ga/In的有希望的候选者。这些Sb 2Se 3可以与传统的高产量CdTe薄膜太阳能电池制造工艺兼容。Sb 2Se 3技术为美国的低成本太阳能提供了替代选择,并具有更健康的环境足迹。通过I-Corps项目,该团队希望进一步调查哪些客户群体重视薄膜太阳能电池市场的这项技术。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Low-temperature processed highly efficient hole transport layer free carbon-based planar perovskite solar cells with SnO2 quantum dot electron transport layer
  • DOI:
    10.1016/j.mtphys.2020.100204
  • 发表时间:
    2020-06
  • 期刊:
  • 影响因子:
    11.5
  • 作者:
    S. Vijayaraghavan;Jacob Wall;Lin Li;G. Xing;Q. Zhang;Feng Yan
  • 通讯作者:
    S. Vijayaraghavan;Jacob Wall;Lin Li;G. Xing;Q. Zhang;Feng Yan
Local mechanical and electrical behavior in CdTe thin film solar cells revealed by scanning probe microscopy
  • DOI:
    10.1063/1.5093906
  • 发表时间:
    2019-08
  • 期刊:
  • 影响因子:
    1.6
  • 作者:
    M. Mathews;Liping Guo;Xiao Han;Swapnil Saurav;G. Xing;Lin Li;Feng Yan
  • 通讯作者:
    M. Mathews;Liping Guo;Xiao Han;Swapnil Saurav;G. Xing;Lin Li;Feng Yan
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Feng Yan其他文献

Spatial and temporal variations of annual precipitation during 1960–2010 in China
1960—2010年中国年降水量时空变化
  • DOI:
    10.1016/j.quaint.2014.12.047
  • 发表时间:
    2015-09
  • 期刊:
  • 影响因子:
    2.2
  • 作者:
    Yanjiao Wang;Xianyan Chen;Feng Yan
  • 通讯作者:
    Feng Yan
Viscosity of two-dimensional strongly coupled dusty plasma modified by a perpendicular magnetic field
垂直磁场修改的二维强耦合尘埃等离子体的粘度
  • DOI:
    10.1103/physreve.96.053208
  • 发表时间:
    2017
  • 期刊:
  • 影响因子:
    2.4
  • 作者:
    Feng Yan;Lin Wei;Murillo M. S.
  • 通讯作者:
    Murillo M. S.
Separative extended-gate AlGaAs/GaAs HEMT biosensors based on capacitance change strategy
基于电容变化策略的分离式扩展栅极AlGaAs/GaAs HEMT生物传感器
  • DOI:
    10.1063/5.0001786
  • 发表时间:
    2020-03
  • 期刊:
  • 影响因子:
    4
  • 作者:
    Jiahuan Yu;Mengke Xu;Lingyan Liang;Min Guan;Yang Zhang;Feng Yan;Hongtao Cao
  • 通讯作者:
    Hongtao Cao
Fluctuation theorem convergence in a viscoelastic medium demonstrated experimentally using a dusty plasma
使用尘埃等离子体通过实验证明了粘弹性介质中的涨落定理收敛性
  • DOI:
    10.1103/physreve.104.035207
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    2.4
  • 作者:
    Huang Dong;Lu Shaoyu;Shi Xia-qing;Goree J.;Feng Yan
  • 通讯作者:
    Feng Yan
Structure, Magnetism and Spin Coupling Mechanism of Cyano-Bridged LnIII–FeIII Binuclear Metal Complexes
氰基桥联LnIII-FeIII双核金属配合物的结构、磁性及自旋耦合机制
  • DOI:
    10.1023/a:1015143113847
  • 发表时间:
    2002
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Xianru Sun;Zhi;Feng Yan;Song Gao;K. Cheung;C. Che;Xi
  • 通讯作者:
    Xi

Feng Yan的其他文献

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{{ truncateString('Feng Yan', 18)}}的其他基金

CAREER: Photovoltaic Devices with Earth-Abundant Low Dimensional Chalcogenides
职业:具有地球丰富的低维硫属化物的光伏器件
  • 批准号:
    2413632
  • 财政年份:
    2024
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
Collaborative Research: Machine Learning-assisted Ultrafast Physical Vapor Deposition of High Quality, Large-area Functional Thin Films
合作研究:机器学习辅助超快物理气相沉积高质量、大面积功能薄膜
  • 批准号:
    2226918
  • 财政年份:
    2023
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
PFI-TT: Highly Efficient, Scalable, and Stable Carbon-based Perovskite Solar Modules
PFI-TT:高效、可扩展且稳定的碳基钙钛矿太阳能模块
  • 批准号:
    2329871
  • 财政年份:
    2023
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
Collaborative Research: Photomechanical Behavior in Photovoltaic Semiconductors
合作研究:光伏半导体中的光机械行为
  • 批准号:
    2330728
  • 财政年份:
    2023
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Collaborative Research: DMREF: AI-enabled Automated design of ultrastrong and ultraelastic metallic alloys
合作研究:DMREF:基于人工智能的超强和超弹性金属合金的自动化设计
  • 批准号:
    2323766
  • 财政年份:
    2023
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Collaborative Research: Design and Discovery of Entropy-Stabilized Perovskite Halide Materials for Optoelectronics
合作研究:用于光电子学的熵稳定钙钛矿卤化物材料的设计和发现
  • 批准号:
    2330738
  • 财政年份:
    2023
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
CAREER: Automated and Efficient Machine Learning as a Service
职业:自动化高效的机器学习即服务
  • 批准号:
    2305491
  • 财政年份:
    2022
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
Collaborative Research: Design and Discovery of Entropy-Stabilized Perovskite Halide Materials for Optoelectronics
合作研究:用于光电子学的熵稳定钙钛矿卤化物材料的设计和发现
  • 批准号:
    2127640
  • 财政年份:
    2021
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
CAREER: Automated and Efficient Machine Learning as a Service
职业:自动化高效的机器学习即服务
  • 批准号:
    2048044
  • 财政年份:
    2021
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
I-Corps: Printable Carbon-based Perovskite Thin Film Solar Cells
I-Corps:可印刷碳基钙钛矿薄膜太阳能电池
  • 批准号:
    2039883
  • 财政年份:
    2020
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant

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