Spin- and angular - resolved ultraviolet photoemission spectroscopy of new topological insulators

新型拓扑绝缘体的自旋和角分辨紫外光电子能谱

• 批准号: 237531056
• 负责人: Professor Dr. Hans-Joachim Elmers
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/237531056?language=en
• 关键词: Spin; angular; resolved; ultraviolet; photoemission

The surface states of a 3-dimensional topological insulator are states with the spin of the electron being locked to its linear momentum. Thus, the identification of the topological order requires a spin-sensitive measurement. Present-day commercial solutions for spin- and angular-resolved photoemission spectroscopy do not fulfill the requirements for high angular and energy resolution. In our approach we will apply the recently developed concept of multichannel spin-polarization analysis. The spin-resolved electronic density of states of epitaxial thin films of the Heusler compound family LaPtBi and of other new topological insulators will be probed. A set-up with in situ spin-analysis immediately after deposition provides the highest possible quality of the surface, as recently shown for a ferromagnetic Heusler compound.

三维拓扑绝缘体的表面态是电子自旋被锁定到其线性动量的状态。因此，拓扑顺序的识别需要自旋敏感的测量。目前的商业解决方案的自旋和角度分辨的光电子能谱不满足高角度和能量分辨率的要求。在我们的方法中，我们将应用最近开发的多通道自旋极化分析的概念。自旋分辨的Heusler化合物家族LaPtBi和其他新的拓扑绝缘体的外延薄膜的电子态密度将被探测。沉积后立即进行原位自旋分析的设置提供了最高可能的表面质量，如最近所示的铁磁Heusler化合物。