CNS Core: Small: Ensuring Privacy by Runtime Analog Sanitization of Solid State Storage Devices
CNS Core: Small: Ensuring Privacy by Runtime Analog Sanitization of Solid State Storage Devices
批准号:
2007403
负责人:
Biswajit Ray
金额:
$49.69万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2020
资助国家:
美国
项目状态:
已结题
起止时间:
2020-10-01 至 2023-11-30
中文摘要
非易失性闪存是固态存储设备的基本组成部分,可在消费电子、汽车、军事、工业、医疗保健和企业领域的各种计算系统中提供小尺寸、高容量、高速和低功耗的永久存储解决方案。不幸的是,从物理闪存中立即删除数据并不总是那么简单,因为它会产生巨大的开销并增加磨损水平,特别是在固态驱动器(ssd)中。根据最近的一份报告,在eBay上出售的二手ssd中,有42%保存着敏感的可恢复数据,即使数据删除或清理方法已经到位。虽然标准的数据删除方法使用户无法通过标准接口访问数据,但我们最近的研究表明,通过闪存单元的物理特性,删除的数据可以部分或完全恢复。这强调了寻找新方法的必要性,以确保删除的数据及时,永久和不可逆地从闪存中删除。这个项目正在研究新的具有成本效益的闪存即时数据处理技术。所提出的技术利用了(a)最近闪存操作的时间轴;(b)由状态衰减模型捕获的闪存单元的物理特性;(c)部分闪存程序和擦除操作。这些技术将被定制,以利用在商业存储应用中发现的闪存芯片的独特属性和架构。所提出的技术将适用于不同类型的闪存,不需要或只需要很少的硬件改变,不会增加闪存的磨损程度,也不会显著增加普通闪存操作的延迟。在运行时对闪存进行经济有效的数据清理的技术将使消费者、行业和政府都受益,因为它确保在产品生命周期的任何时候都无法恢复删除的数据。这些技术将部署在闪存控制器的固件中。这项建议的直接成果将是在面向硬件的安全和存储系统这一重要领域培训三名研究生。研究人员正在开发教材,介绍嵌入式系统、计算机系统体系结构和硬件可靠性课程中面向硬件的安全主题。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Non-volatile flash memories, the basic building blocks of solid-state storage devices, offer small form factors, high-capacity, high-speed, and low-power permanent storage solutions in a wide range of computing systems found in consumer electronics, automotive, military, industrial, healthcare, and enterprise segments. Unfortunately, deleting data instantly from physical flash memories is not always straightforward as it incurs hefty overheads and increases wear level, especially in solid-state drives (SSDs). According to a recent report, 42% of used SSDs sold on eBay held sensitive recoverable data, even though data deletion or sanitization methods were in place. Whereas standard data deletion methods make the data inaccessible to the user through standard interfaces, our recent research efforts demonstrate that the deleted data is partially or fully recoverable by means of physical characterization of flash memory cells. This underscores the need for finding new ways to ensure that deleted data is promptly, permanently, and irreversibly re-moved from flash memories. This project is investigating new cost-effective instant data sanitization techniques for flash memories. The proposed techniques take advantage of (a) timeline of recent flash operations; (b) physical properties of flash memory cells cap-tured by state decay models and (c) partial flash program and erase operations. These techniques will be tailored to uti-lize the unique properties and architectures of flash-memory chips found in commercial storage applications. The proposed techniques will be applicable to different types of flash memories, will require no or minimal changes in hardware, and will not increase the wear level of flash memories nor significantly increase the latency of common flash operations. Techniques for cost-effective data sanitization of flash memories in run-time will benefit consumers, industry, and government alike by ensuring that deleted data is not recoverable at any time during the product’s life cycle. These techniques will be deployed in the firmware of flash memory controllers. A direct outcome of this proposal will be the training of three graduate students in the important area of hardware-oriented security and memory systems. The investigators are developing teaching materials to introduce hardware-oriented security topics in embedded systems, computer systems architecture, and hardware reliability courses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
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Hide-and-Seek: Hiding Secrets in Threshold Voltage Distributions of NAND Flash Memory Cells
捉迷藏:隐藏 NAND 闪存单元阈值电压分布的秘密
DOI:
10.1145/3599691.3603415
发表时间:
2023
期刊:
Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems
影响因子:
--
作者:
[Raquibuzzaman, Md, Milenkovic, Aleksandar, Ray, Biswajit]
通讯作者:
Ray, Biswajit
DOI:
10.1109/ted.2022.3224420
发表时间:
2023-01
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[M. Raquibuzzaman;A. Milenković;B. Ray]
通讯作者:
M. Raquibuzzaman;A. Milenković;B. Ray
Flash-DNA: Identifying NAND Flash Memory Origins Using Intrinsic Array Properties
Flash-DNA:使用固有阵列属性识别 NAND 闪存起源
DOI:
10.1109/ted.2021.3087454
发表时间:
2021
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[Sakib, Sadman, Milenkovic, Aleksandar, Ray, Biswajit]
通讯作者:
Ray, Biswajit
Microcontroller Fingerprinting Using Partially Erased NOR Flash Memory Cells
使用部分擦除的 NOR 闪存单元进行微控制器指纹识别
DOI:
10.1145/3448271
发表时间:
2021
期刊:
ACM Transactions on Embedded Computing Systems
影响因子:
2
作者:
[Poudel, Prawar, Ray, Biswajit, Milenkovic, Aleksandar]
通讯作者:
Milenkovic, Aleksandar
DOI:
--
发表时间:
2020
期刊:
影响因子:
--
作者:
[M. Hasan;B. Ray]
通讯作者:
M. Hasan;B. Ray
共 6 条
CNS Core: Small: Ensuring Privacy by Runtime Analog Sanitization of Solid State Storage Devices
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批准号:2403540
-
项目类别:Standard Grant
-
资助金额:$49.69万
-
财政年份:2023
-
负责人:Biswajit Ray
-
依托单位:
CAREER: Leveraging physical properties of modern flash memory chips for resilient, secure, and energy-efficient edge storage systems
-
批准号:2346853
-
项目类别:Continuing Grant
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资助金额:$65.0万
-
财政年份:2023
-
负责人:Biswajit Ray
-
依托单位:
CAREER: Leveraging physical properties of modern flash memory chips for resilient, secure, and energy-efficient edge storage systems
-
批准号:2145311
-
项目类别:Continuing Grant
-
资助金额:$65.0万
-
财政年份:2022
-
负责人:Biswajit Ray
-
依托单位:
RII Track-4: Real-Time Radiation Dosimetry Using Flash Memory
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批准号:1929099
-
项目类别:Standard Grant
-
资助金额:$23.33万
-
财政年份:2019
-
负责人:Biswajit Ray
-
依托单位:
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