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Low-Voltage High-Frequency Vertical Organic Transistors

低压高频垂直有机晶体管

基本信息

批准号：
240553371
负责人：
Professor Dr. Johann-Wolfgang Bartha
金额：
--
依托单位：
Institut für Halbleiter- und Mikrosystemtechnik (IHM)
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2014
资助国家：
德国
起止时间：
2013-12-31 至 2016-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/240553371?language=en
关键词：
Low Voltage Frequency Vertical Organic

项目摘要

Organic field effect transistors (OFETs) hold the promise of enabling a low cost, flexible electronics. Driven by a fundamental understanding of the working principles, a significant improvement in performance has been reached. However, OFETs are still limited by the low charge carrier mobility of organic semiconductors, leading to low operational frequencies and driving currents, which render many applications out of reach. The performance of OFETs could be increased by scaling the channel length into the sub-micrometer region, which however involves costly structuring techniques and is inhibitive considering the strengths of organic electronics as a low cost technology.In this project we propose a novel technology to overcome these limits of conventional organic transistors. Instead of the horizontal structure of conventional OFETs, the transistors are structured vertically. This allows defining the channel length by the thickness of organic or metallic layers which can be controlled with nanometer precision. Thus, it is possible to aggressively scale the channel length down to the sub 100nm region without the need for costly structuring techniques.The project will cover all research aspects needed to enable such a vertical technology, ranging from materials science, device optimization, to circuit design. In particular, the project aims at a) improving the performance of vertical organic transistors already developed by IAPP by doping the source/drain contacts and advanced insulating layers developed by IHM (IAPP/Leo, IHM/Bartha), b) characterizing and improving the high-frequency performance of these transistors (IAPP/Lüssem, CCN/Ellinger), and c) realizing a fully organic amplifier operating at high frequencies (CCN/Ellinger, IAPP/Lüssem). The four partners have a unique combination of expertise needed to challenge this demanding project. The IAPP (Prof. Leo, Dr. Lüssem) developed several vertical transistor concepts and is well known for its doping technology, which is essential for the improvement of vertical OFETs. The IHM is an expert in atomic and molecular layer deposition (ALD and MLD), which will be used to develop novel ultrathin organic/inorganic nanohybride layers used as gate insulator to allow for low voltage operation. Finally the CCN is devoted to the design of integrated circuits using CMOS and BiCMOS technologies as well as advanced "Beyond and Beside Moore" technologies like carbon nano tubes, nanowires and organic & polymer devices. The expertise of the CCN is essential for the design of the organic amplifier and the high-frequency characterization of the transistors.The cooperation of these groups across the boundaries of applied physics, materials science, electrical engineering, and circuit design will lead to novel perspectives in research in organic transistors and to novel, unconventional solutions that enable a breakthrough in organic electronics.

有机场效应晶体管 (OFET) 有望实现低成本、柔性电子产品。在对工作原理的基本理解的推动下，性能得到了显着提高。然而，OFET仍然受到有机半导体的低电荷载流子迁移率的限制，导致工作频率和驱动电流低，这使得许多应用遥不可及。有机场效应晶体管的性能可以通过将沟道长度缩小到亚微米区域来提高，然而，这涉及昂贵的结构化技术，并且考虑到有机电子作为低成本技术的优势，它是具有抑制性的。在这个项目中，我们提出了一种新技术来克服传统有机晶体管的这些限制。晶体管采用垂直结构，而不是传统 OFET 的水平结构。这允许通过可以纳米精度控制的有机或金属层的厚度来定义沟道长度。因此，可以将沟道长度大幅缩小到 100nm 以下区域，而不需要昂贵的结构化技术。该项目将涵盖实现这种垂直技术所需的所有研究方面，从材料科学、器件优化到电路设计。该项目的具体目标是：a) 通过掺杂 IHM（IAPP/Leo、IHM/Bartha）开发的源极/漏极接触和高级绝缘层来提高 IAPP 已开发的垂直有机晶体管的性能，b) 表征和提高这些晶体管（IAPP/Lüssem、CCN/Ellinger）的高频性能，以及 c) 实现全有机放大器在高频下工作（CCN/Ellinger、IAPP/Lüssem）。这四位合作伙伴拥有挑战这一高要求项目所需的独特专业知识组合。 IAPP（Leo 教授、Lüssem 博士）开发了多种垂直晶体管概念，并以其掺杂技术而闻名，这对于垂直 OFET 的改进至关重要。 IHM 是原子和分子层沉积（ALD 和 MLD）领域的专家，将用于开发新型超薄有机/无机纳米混合层，用作栅极绝缘体，以实现低电压运行。最后，CCN 致力于使用 CMOS 和 BiCMOS 技术以及先进的“超越摩尔”技术（例如碳纳米管、纳米线以及有机和聚合物器件）进行集成电路设计。 CCN 的专业知识对于有机放大器的设计和晶体管的高频表征至关重要。这些团队跨越应用物理、材料科学、电气工程和电路设计等领域的合作，将为有机晶体管的研究带来新的视角，并带来新颖、非常规的解决方案，从而实现有机电子学的突破。