Flexible Graphene-Base Heterojunction Transistor for Several Hundred Gigahertz Operation

用于数百千兆赫操作的柔性石墨烯基异质结晶体管

• 批准号: 273132745
• 负责人: Professor Dr. Johann-Wolfgang Bartha
• 金额: --
• 依托单位: Institut für Halbleiter- und Mikrosystemtechnik (IHM)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2023-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/273132745?language=en
• 关键词: Flexible; Graphene; Base; Heterojunction; Transistor

In this project we will investigate a new vertical transistor concept fabricated on flexible substrates. Graphene is used as an extremely thin, low resistivity base electrode. The graphene base heterojunction transistor (GBHT) can be thought of as a NPN bipolar transistor with the p-type base being replaced by a graphene layer. This novel concept is based on a vertical arrangement of emitter, base, and collector. The device is obtained by stacking an n-type semiconductor (emitter), a graphene monolayer (base), and another n-type semiconductor (collector).The band scheme, working principle and additional advantages of this novel transistor concept have been explained in detail in the proposal of the previous project (DFG BA 2009/6-1 and WE3594/5-1). In the proposed transistor configuration on flexible substrates with n-type hydrogenated amorphous silicon (a-Si:H), frequencies up to several 100 GHz should be feasible, because the cut-off frequency is mainly controlled by the mobility of a-Si:H. To our knowledge, we are the only group worldwide so far working on this promising unique device concept. This pioneering work will potentially pave the way for a new class of electronic devices with graphene in general.The receiver and transmission circuits are the fundamental elements of wireless communications. Based on simulation results, a high frequency oscillator can be envisioned as a first application. Using the variable capacitance of the a-Si:H / graphene diodes, a varactor device could be integrated to implement the design as a voltage controlled oscillator. This approach could enable the first building block on flexible substrates.

在这个项目中，我们将研究一种新的垂直晶体管的概念，柔性基板上制造。石墨烯用作极薄、低电阻率的基极。石墨烯基异质结晶体管（GBHT）可以被认为是NPN双极晶体管，其中p型基极被石墨烯层取代。这种新颖的概念是基于发射极，基极和集电极的垂直排列。该器件由一个n型半导体（发射极）、一个石墨烯单层（基极）和另一个n型半导体（集电极）堆叠而成。这种新型晶体管概念的能带结构、工作原理和附加优点已在先前项目的提案（DFG BA 2009/6-1和WE 3594/5-1）中详细解释。在所提出的具有n型氢化非晶硅（a-Si：H）的柔性衬底上的晶体管配置中，高达几百GHz的频率应该是可行的，因为截止频率主要由a-Si：H的迁移率控制。据我们所知，我们是迄今为止全球唯一致力于这一有前途的独特设备概念的团队。这项开创性的工作可能会为一种新的石墨烯电子设备铺平道路。接收器和传输电路是无线通信的基本元件。基于仿真结果，可以设想高频振荡器作为第一应用。使用a-Si：H /石墨烯二极管的可变电容，可以集成变容二极管器件以将设计实现为压控振荡器。这种方法可以在柔性基板上实现第一构建块。