STTR Phase I: Vertical Structure Thin Film Transistors for High Performance Displays and Internet of Things Devices
STTR Phase I: Vertical Structure Thin Film Transistors for High Performance Displays and Internet of Things Devices
批准号:
2014979
负责人:
Chong Lee
金额:
$22.49万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2020
资助国家:
美国
项目状态:
已结题
起止时间:
2020-05-15 至 2024-06-30
中文摘要
这一小型企业技术转让(STTR)第一阶段项目的更广泛影响/商业潜力是提高各种外形因素和尺寸的平板显示器的性能。平板显示器的关键子系统之一是驱动面板中像素的TFT(薄膜晶体管)背板。越来越多的人要求提高显示器的分辨率和帧速率,这对TFT背板的性能提出了巨大的挑战。拟议中的STTR研究将利用现有的半导体材料生产出速度快几个数量级的TFT器件。这项技术将为显示器、印刷电子和物联网应用带来更强大的解决方案。这个小型企业技术转移(STTR)第一阶段项目开发了一种用于显示器和其他需要晶体管的电子产品的新型薄膜晶体管(TFT)设计。传统的TFT晶体管横向切换电流,很难减小到微米级以下。这项拟议的研究将生产垂直开关电流的TFT晶体管。在垂直器件中,发生开关的路径长度要短得多,因此开关发生得更快,并且可以携带比传统设计更多的电流。该项目使用非晶态铟、镓、锌氧化物半导体开发了一种垂直TFT。该项目将推进原型垂直TFT的开发。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
The broader impact/commercial potential of this Small Business Technology Transfer (STTR) Phase I project is to improve the performance of flat panel displays of various form factors and sizes. One of the key subsystems of a flat panel display is a TFT (Thin Film Transistor) backplane that drives the pixels in the panel. There are increasing demands for improved resolution and frame rate in displays, posing significant challenges on the performance of the TFT backplane. The proposed STTR research will produce TFT devices that are several orders of magnitude faster using existing semiconductor materials. This technology will lead to more capable solutions for displays, printed electronics, and internet-of-things applications.This Small Business Technology Transfer (STTR) Phase I project develops a novel Thin Film Transistor (TFT) design for displays and other electronics that require transistors. Conventional TFT transistors switch current laterally and are difficult to reduce below micron-level sizes. The proposed research will produce TFT transistors that switch current vertically. The path length across which the switching occurs is much shorter in the vertical devices and therefore the switching happens faster and can carry more current than conventional designs. This project develops a vertical TFT using amorphous indium gallium zinc oxide semiconductors. The project will advance the development of a prototype vertical TFT.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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