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SBIR Phase II:Next Generation Vertical Cavity Surface Emitting Lasers

SBIR Phase II:Next Generation Vertical Cavity Surface Emitting Lasers
SBIR 第二阶段:下一代垂直腔表面发射激光器
批准号:
1353601
负责人:
Majid Riaziat
金额:
$75.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-04-15 至 2018-08-31

项目摘要

项目成果

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中文摘要
翻译
这个小企业创新研究第二阶段项目提出制造和商业化垂直腔面发射激光器(VCSELs),该激光器不受半导体衬底选择所施加的任何波长限制。这些革命性的vcsel将在单模下工作,具有高输出功率,窄线宽和稳定的线偏振,用于光谱学和通信。利用二维光子晶体结构和与衬底无关的反射器,可以在覆盖近红外和接近中红外(800nm至2500nm)的任何波长上构建高效的单模vcsel。通过极低的电阻和高效的散热,实现高效率和高输出功率。第一个原型将有一个雄心勃勃的目标,即在长距离光纤通信和近红外光谱中提供DFB激光器的首选替代品。该项目的广泛影响/商业潜力包括许多社会、教育、科学和商业效益。作为一项社会效益,这项技术的商业化将使空气和水污染测量更快、更简单,以及更快、成本更低的电信成为可能。作为教育和科学效益,下一代VCSEL的发展为制造可用于光信号处理和新型激光器设计的二维光子晶体提供了一种强大而可靠的方法。此外,由此产生的高效率紧凑激光器具有高模式质量,可用于泵浦高功率固体激光器;最后,这些先进激光器的高速版本可以简化用于科学模拟的快速计算机系统中的数据通信。作为商业影响,下一代vcsel的附加功能将使它们能够突破当前的利基数据通信市场,进入通信和仪器仪表领域的更广泛应用。它们的衬底独立性最终将使它们能够在硅和其他适合最终应用的材料上加工。由于vcsel将服务于新的市场,这将导致对vcsel的需求大幅增加。
英文摘要
This Small Business Innovation Research Phase II project proposes to fabricate and commercialize Vertical Cavity Surface Emitting Lasers (VCSELs) that are free from any wavelength limitations imposed by the choice of semiconductor substrate. These revolutionary VCSELs will operate in a single mode with high output power, narrow linewidth and a stable linear polarization for use in spectroscopy and communications. Using 2D photonic crystal structures and substrate-independent reflectors, it is possible to build efficient single mode VCSELs at any wavelength covering the near-infrared and approaching mid infrared (800nm to 2,500nm). High efficiency and high output power are achieved by very low electrical resistance and efficient heat sinking. The first prototype will have the ambitious goal of offering a preferred alternative to DFB lasers in long-haul fiber optic communications and near infrared spectroscopy.The broader impact/commercial potential of this project includes many societal, educational, scientific and commercial benefits. As a social benefit, the commercialization of this technology will enable faster and simpler air and water contamination measurements, and faster and lower-cost telecommunications. As an educational and scientific benefit, the next generation VCSEL development provides a robust and reliable method for fabricating 2D photonic crystals that are usable for optical signal processing and novel laser designs. Also, the resulting high-efficiency compact lasers with high mode quality can be used for pumping high power solid state lasers; and finally, the high speed versions of these advanced lasers can simplify data communication in fast computer systems used in scientific simulations. As a commercial impact, the additional functionalities of the next generation VCSELs will enable them to break out of their current niche datacom market into broader applications in communications and instrumentation. Their substrate independence will eventually make it possible to process them on silicon and other materials suitable for the final application. This will lead to a significant increase in demand for VCSELs due to the new markets that they will serve.
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SBIR Phase I: Next Generation Vertical Cavity Surface Emitting Lasers
  • 批准号:
    1214881
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2012
  • 负责人:
    Majid Riaziat
  • 依托单位:
SBIR Phase I: Single-Mode Single-Polarization VCSELs at any Wavelength
  • 批准号:
    1014127
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2010
  • 负责人:
    Majid Riaziat
  • 依托单位:
SBIR Phase II: Vertical Electroabsorptive Modulated Laser (EML) Source for High-Speed Interconnects
  • 批准号:
    0450619
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2005
  • 负责人:
    Majid Riaziat
  • 依托单位:
SBIR Phase I: Vertical EML Source for High-Speed Interconnects
  • 批准号:
    0339336
  • 项目类别:
    Standard Grant
  • 资助金额:
    $9.94万
  • 财政年份:
    2004
  • 负责人:
    Majid Riaziat
  • 依托单位:
国内基金
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