MRI: Acquisition of High-Temperature Semiconductor Processing Equipment to Support Research and Education in Power, Energy and Material Sciences

非技术性：碳化硅，也被称为碳化硅，是一种由硅和碳组成的无色半导体。碳化硅使电子设备能够在高温和高压下运行，这使得它对电力电子设备具有吸引力。碳化硅电力电子对现代电网的发展、更多地采用可再生能源和材料科学具有潜在的变革性影响。该项目是购买高温半导体退火炉，以完成阿肯色大学的碳化硅(碳化硅)生产线。这种仪器满足了国家对小批量碳化硅原型成型的需求。PIS将利用之前与工程和科学人才的投资来创建一个设施，将吸引公共和私人合作伙伴到阿肯色州。相关的劳动力培训工作将刺激创造高技能、高收入的工作岗位，重点是下一代碳化硅材料的开发和制造。它可以开始给阿肯色州的经济带来一个不断增长的高科技领域。随着碳化硅在电力电子中的应用越来越普遍，学生必须获得处理这些材料、器件、电路和电源模块的经验。SIC设施将实现世界级的研究，并扩大本科生和研究生在材料研究和设备工程方面的教育机会。为此，将开发一系列课程，用于使用所获得的仪器的能源应用的碳化硅处理。技术：碳化硅器件的制造需要经常和重复地进行高达1800°C的高温退火，以激活注入的掺杂物种，并减少离子轰击造成的材料损害。在金属化过程中，它也是碳化硅栅氧化物退火和欧姆接触形成所必需的。所要求的加工设备将包括带有三个加热区和控制区的真空密闭反应堆，可加工高达2000°C的各种6英寸晶片。为拟议的UA设施扩建提供支持的净室基础设施已准备就绪，包括空间、电力、安全和气体入口。拟议的设备将使UA薄膜净化室支持的半导体设备和电路的类型多样化，促进更广泛和更具科学多样性的用户进行电力和能源研究。与材料、电力和能源相关的新研究项目的例子包括：(1)碳化硅器件和集成电路；(2)用于传感器应用的宽禁带光电器件开发；(3)带热管理的晶圆级集成电源模块；(4)高温芯片上功率转换器；(5)碳化硅集成电路的高温封装。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Non-technical:Silicon carbide (SiC), also known as carborundum, is a colorless semiconductor composed of silicon and carbon. SiC enables electronic devices to operate at high temperatures and high voltages, making it attractive for power electronics. SiC power electronics have potentially transformative impacts on development of the modern power grid, increased adoption of renewable energy, and materials science. The project is to acquire high temperature semiconductor annealing furnaces to complete a silicon carbide (SiC) processing line at University of Arkansas. This instrumentation fulfills a national need for low-volume SiC prototyping. The PIs will leverage prior investments with engineering and science talent to create a facility that will attract public and private partners to Arkansas. Associated workforce training efforts will spur the creation of high-skilled, high-paying jobs focusing on the development and manufacture of next generation SiC materials. It can begin a growing high-tech segment to the Arkansas economy. As SiC becomes more commonly used in power electronics, it is imperative that students gain experience handling those materials, devices, circuits and power modules. The SiC facility will enable world-class research and expand educational opportunities for undergraduates and graduate students in materials research and device engineering. Towards that end, a series of courses will be developed on SiC processing for energy applications that employ the acquired instrumentation.Technical:High temperature annealing up to 1800°C is needed often and repeatedly for SiC device fabrication to activate the implanted dopant species and reduce the material damage caused by ion bombardment. It is also required for SiC gate oxide annealing and ohmic contact formation in the metallization process. The requested processing equipment will consist of vacuum tight reactor with three heating and control zones, which can process various 6-inch wafers up to 2000°C. Supporting clean room infrastructure for the proposed expansion to the UA facility is ready, including space, power, safety and gas inlets. The proposed equipment will diversify the types of semiconductor devices and circuits supported by the UA thin film clean room, facilitating power and energy research by a broader and more scientifically diverse set of users. Examples of new research projects related to material, power and energy that will be enabled by this MRI request include: (1) SiC devices and integrated circuits; (2) wide bandgap-based optoelectronic device development for sensor applications; (3) wafer-level integrated power module with thermal management; (4) high temperature power-converter-on-chip; (5) high temperature packaging for SiC integrated circuits.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.