MRI: Acquisition of High-Temperature Semiconductor Processing Equipment to Support Research and Education in Power, Energy and Material Sciences

非技术性：碳化硅（SiC），也称为碳碳化硅，是一种由硅和碳组成的无色半导体。SiC使电子器件能够在高温和高压下工作，使其对电力电子具有吸引力。SiC电力电子对现代电网的发展、可再生能源的采用和材料科学具有潜在的变革性影响。该项目旨在收购高温半导体退火炉，以完成阿肯色州大学的碳化硅（SiC）加工线。该仪器满足了全国对小批量SiC原型的需求。PI将利用工程和科学人才的先前投资，创建一个吸引公共和私人合作伙伴到阿肯色州的设施。相关的劳动力培训工作将刺激创造高技能、高收入的工作岗位，重点是下一代SiC材料的开发和制造。它可以开始一个不断增长的高科技部分的阿肯色州经济。随着SiC在电力电子中的应用越来越普遍，学生必须获得处理这些材料，器件，电路和功率模块的经验。SiC工厂将为材料研究和器件工程领域的本科生和研究生提供世界一流的研究和扩大教育机会。为此，将开发一系列关于采用所获得仪器的能源应用的SiC加工的课程。技术：SiC器件制造经常需要反复进行高达1800 ° C的高温退火，以激活注入的掺杂剂物种并减少离子轰击造成的材料损伤。在金属化工艺中，SiC栅极氧化物退火和欧姆接触形成也需要它。所要求的加工设备将包括具有三个加热和控制区的真空密封反应器，可以加工高达2000 ° C的各种6英寸晶圆。为拟议的UA设施扩建提供支持的洁净室基础设施已经准备就绪，包括空间、电力、安全和气体入口。拟议的设备将使UA薄膜洁净室支持的半导体器件和电路的类型多样化，促进更广泛和更科学多样化的用户的电力和能源研究。与材料、功率和能源相关的新研究项目的例子将通过该MRI请求实现，包括：（1）SiC器件和集成电路;（2）用于传感器应用的基于宽带隙的光电子器件开发;（3）具有热管理的晶圆级集成功率模块;（4）高温片上功率转换器;（5）集成电路;（6）集成电路;（7）集成电路;（8）集成电路;（9）集成电路;（10）集成电路;（11）集成电路;（12）集成电路;（13）集成电路;（14）集成电路;（15）集成电路;（16）集成电路;（17）集成电路;（18）集成电路;（19）集成电路;（1（5）SiC集成电路的高温封装。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Non-technical:Silicon carbide (SiC), also known as carborundum, is a colorless semiconductor composed of silicon and carbon. SiC enables electronic devices to operate at high temperatures and high voltages, making it attractive for power electronics. SiC power electronics have potentially transformative impacts on development of the modern power grid, increased adoption of renewable energy, and materials science. The project is to acquire high temperature semiconductor annealing furnaces to complete a silicon carbide (SiC) processing line at University of Arkansas. This instrumentation fulfills a national need for low-volume SiC prototyping. The PIs will leverage prior investments with engineering and science talent to create a facility that will attract public and private partners to Arkansas. Associated workforce training efforts will spur the creation of high-skilled, high-paying jobs focusing on the development and manufacture of next generation SiC materials. It can begin a growing high-tech segment to the Arkansas economy. As SiC becomes more commonly used in power electronics, it is imperative that students gain experience handling those materials, devices, circuits and power modules. The SiC facility will enable world-class research and expand educational opportunities for undergraduates and graduate students in materials research and device engineering. Towards that end, a series of courses will be developed on SiC processing for energy applications that employ the acquired instrumentation.Technical:High temperature annealing up to 1800°C is needed often and repeatedly for SiC device fabrication to activate the implanted dopant species and reduce the material damage caused by ion bombardment. It is also required for SiC gate oxide annealing and ohmic contact formation in the metallization process. The requested processing equipment will consist of vacuum tight reactor with three heating and control zones, which can process various 6-inch wafers up to 2000°C. Supporting clean room infrastructure for the proposed expansion to the UA facility is ready, including space, power, safety and gas inlets. The proposed equipment will diversify the types of semiconductor devices and circuits supported by the UA thin film clean room, facilitating power and energy research by a broader and more scientifically diverse set of users. Examples of new research projects related to material, power and energy that will be enabled by this MRI request include: (1) SiC devices and integrated circuits; (2) wide bandgap-based optoelectronic device development for sensor applications; (3) wafer-level integrated power module with thermal management; (4) high temperature power-converter-on-chip; (5) high temperature packaging for SiC integrated circuits.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.