CAREER: Two-Dimensional Straintronic Field Effect Transistor

职业：二维应变电子场效应晶体管

• 批准号: 2042154
• 负责人: Saptarshi Das
• 金额: $ 50万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-03-01 至 2026-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2042154&HistoricalAwards=false
• 关键词: CAREER; Two; Dimensional; Straintronic; Field

Proposal Number: 2042154Principal Investigator: Saptarshi DasTitle: CAREER: Two-Dimensional Straintronic Field Effect TransistorInstitution: Pennsylvania State Univ University ParkNontechnical Abstract:Energy efficient computing will revolutionize next generations of smart and secure electronic devices, and benefit all sectors of modern society including agriculture, healthcare, automation, communication, defense, and infrastructure. In fact, the 21st century, which promises to thrive on big data, remote sensing, Internet-of-Things (IoT) and so on, demands novel devices, which can operate with power so frugal that ambient energy harvesting may accommodate all of their needs. The conventional silicon based complementary metal oxide semiconductor technology is inadequate for achieving such goals necessitating novel material discovery and device level innovations. This may be achieved in two-dimensional straintronic field effect transistors by utilizing a unique property of two-dimensional materials, namely, strain induced dynamic bandgap engineering and integrating it with piezoelectric nanotransducers, which will be explored in the proposed research. Technical AbstractThe aim of the proposal is to experimentally demonstrate steep slope switching in two-dimensional straintronic field effect transistors (2D SFET) exploiting in-operando and uniaxial strain engineering in 2D transition metal dichalcogenides (TMDCs). The 2D SFET can defy the thermodynamic limit imposed by Boltzmann statistics in conventional metal oxide semiconductor field effect transistors (FET) and achieve sub-60mV/decade subthreshold swing at room temperature along with high on-state performance. Realization of 2D SFET requires monolithic integration of 2D TMDC based FETs with piezoelectric (PE) ceramic based nanotransducers. The PE expands in response to an applied gate bias and transduces an out-of-plane stress on the 2D channel material reducing its bandgap. The result is an internal voltage amplification that leads to steep slope switching. While static, in-plane, and biaxial strain is used in conventional silicon technology, dynamic strain engineering is a relatively uncharted territory. Consequently, exploration of novel straintronic devices based on novel 2D TMDCs will add new fundamental knowledge towards advancing concepts for resolving critical computing needs and grand engineering challenges. Furthermore, the proposed straintronic platform will offer exciting opportunities to develop novel concepts including straintronic neuromorphic devices (SNDs) for brain-inspired computing, straintronic memory devices (SMDs) for in-memory computing, and straintronic security devices (SSDs) for secure computing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

提案编号：2042154原理研究者：Saptarshi Dastitle：职业：二维劳累曲折场效应晶体植物晶体植物：宾夕法尼亚州立大学联合大学Parknontechnical摘要：能源有效计算将革新下一代智能和安全的社会，以及宣传社会的所有社会，包括农业，健康，适用于农业，并受益 基础设施。实际上，21世纪有望在大数据，遥感，图像互联网（IoT）等方面蓬勃发展，依此类推，需要新颖的设备，这些设备的功率可能会如此节俭，以至于环境能量收获可能会适应他们的所有需求。常规的基于硅的互补金属氧化物半导体技术不足以实现需要新颖的物质发现和设备级创新的此类目标。通过利用二维材料的独特特性，即应变诱导的动态带隙工程，并将其与压电电纳米传递器集成在一起，可以通过使用二维材料的唯一特性来实现这一点，这将在拟议的研究中探索。该提案的目的是在实验上证明在二维应变型场效应晶体管（2D SFET）中利用了operando in-Operando和2D过渡金属二核苷（TMDC）中的单轴应变工程。 2D SFET可以违抗传统金属氧化物半导体场效应晶体管（FET）中Boltzmann统计施加的热力学极限，并在室温下以及州的较高状态性能以及室温下达到低于60mv/十年的亚阈值。 2D SFET的实现需要将基于2D TMDC的FET与压电（PE）基于陶瓷的纳米转换器进行单片整合。 PE响应于施加的栅极偏置，并在2D通道材料上传递平面应力，从而减少其带隙。结果是内部电压放大，导致陡峭的斜率开关。虽然在常规硅技术中使用静态，内面积和双轴应变，但动态应变工程是一个相对未知的领域。因此，基于新颖的2D TMDC的新型应变设备的探索将增加新的基本知识，以促进解决关键计算需求和宏伟工程挑战的概念。此外，拟议的应变型平台将为开发新的概念提供令人兴奋的机会影响审查标准。

项目成果

An All-in-One Bioinspired Neural Network

一体化仿生神经网络

• DOI: 10.1021/acsnano.2c02172
• 发表时间: 2022
• 期刊: ACS Nano
• 影响因子: 17.1
• 作者: Subbulakshmi Radhakrishnan, Shiva;Dodda, Akhil;Das, Saptarshi
• 通讯作者: Das, Saptarshi

Transistors based on two-dimensional materials for future integrated circuits

• DOI: 10.1038/s41928-021-00670-1
• 发表时间: 2021-11-01
• 期刊: NATURE ELECTRONICS
• 影响因子: 34.3
• 作者: Das, Saptarshi;Sebastian, Amritanand;Singh, Rajendra
• 通讯作者: Singh, Rajendra

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

• DOI: 10.1039/d1cs00706h
• 发表时间: 2021-08-16
• 期刊: CHEMICAL SOCIETY REVIEWS
• 影响因子: 46.2
• 作者: Schranghamer, Thomas F.;Sharma, Madan;Das, Saptarshi
• 通讯作者: Das, Saptarshi

Active pixel sensor matrix based on monolayer MoS2 phototransistor array

• DOI: 10.1038/s41563-022-01398-9
• 发表时间: 2022-11-17
• 期刊: NATURE MATERIALS
• 影响因子: 41.2
• 作者: Dodda, Akhil;Jayachandran, Darsith;Das, Saptarshi
• 通讯作者: Das, Saptarshi

An Ultra-steep Slope Two-dimensional Strain Effect Transistor

• DOI: 10.1021/acs.nanolett.2c02194
• 发表时间: 2022-11-23
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Das, Sarbashis;Das, Saptarshi
• 通讯作者: Das, Saptarshi