GOALI: Large Scale Synthesis and Manufacturing of Atomically Thin Polar Materials for Quantum Applications

GOALI:用于量子应用的原子薄极性材料的大规模合成和制造

基本信息

  • 批准号:
    2129412
  • 负责人:
  • 金额:
    $ 41.09万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2021
  • 资助国家:
    美国
  • 起止时间:
    2021-10-01 至 2024-09-30
  • 项目状态:
    已结题

项目摘要

This Grant Opportunities for Academic Liaison with Industry (GOALI) award supports research that establishes new knowledge for the manufacturing of two-dimensional (2D) polar semiconductors, which are next-generation semiconducting materials for quantum information systems. Polar or Janus layered materials contain different atoms on each face and exhibit unusual electronic properties. Atomic layer deposition is one of the common methods used to grow ultra-thin layered materials. However, current manufacturing knowledge is limited in the precise control at atomic scales which is necessary to manufacture these quantum materials. This GOALI award brings together academia and industry partners to establish the foundations of atomic layer deposition-based manufacturing techniques to synthesize polar semiconductors with high structural, electronic, and optical quality. In the quantum age, this project has the potential to lead the manufacturing of quantum materials and systems that augments U.S. economic competitiveness globally. The educational and outreach plans focus on offering research and development opportunities at the intersection of manufacturing science, materials science, physics and chemistry to women and underrepresented minorities in the metropolitan area and beyond. The project offers capstone projects to undergraduate students and creates industry training opportunities.Recently discovered Janus two-dimensional (2D) materials exhibit broken mirror symmetry and colossal polarization fields leading to new quantum effects and functionalities that cannot be found in classical 2D systems. However, the manufacturing of these materials is very challenging since it requires atomically precise deposition of three different elements atom-by-atom in order to form chemically passivated van der Waals materials. This research aims to fill the fundamental knowledge gap in atomic layer deposition (ALD) for polar or Janus semiconductor materials by establishing ALD precursor chemistry and reaction kinetics to achieve high-quality 2D polar materials at wafer-scale. The research team, together with industry partners, plans to design, synthesize, engineer and test new types of ALD precursor species designed to deposit three different atoms and build a library of ultra-thin polar semiconductors. The project establishes the kinetics of ALD reaction and models it based on Johnson-Mehl-Avrami-Kolmogorov or Monte-Carlo simulations. The project tests the hypothesis that proper precursor chemistry, high enough ALD temperature, ideal pulse/purge times, and hydroxide-based surface chemistry can enable the manufacture of crystalline, excitonic and electronic grade polar semiconductors at wafer scales. Advanced characterization techniques are used to establish the process-structure-property-performance relations in these novel quantum materials. The overall results aim to give the researchers access to these completely new highly crystalline polar semiconductors that are not accessible with today's manufacturing methods.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这项与行业联络的赠款机会(Goari)奖支持了为制造二维(2D)极地半导体制造的新知识的研究,它们是量子信息系统的下一代半导体材料。极性或Janus分层材料在每个面上都包含不同的原子,并具有不寻常的电子特性。原子层沉积是用于生长超薄分层材料的常见方法之一。但是,当前的制造知识在原子量表的精确控制中受到限制,这是制造这些量子材料所必需的。该目标奖将学术界和行业合作伙伴汇集在一起​​,以建立基于原子层沉积的制造技术的基础,以合成具有高结构,电子和光学质量的极性半导体。在量子时代,该项目有可能领导制造量子材料和系统,从而在全球范围内增强美国经济竞争力。教育和外展计划着重于在大都市及以后的妇女和代表性不足的妇女以及代表性不足的少数群体的交汇处提供研发机会。该项目为本科生提供了顶峰项目,并创造了行业培训机会。发现Janus二维(2D)材料展示了破碎的镜像对称性和巨大的极化场,从而在古典2D系统中发现了新的量子效应和功能。但是,这些材料的制造非常具有挑战性,因为它需要在原子上精确地沉积三个不同元素原子原子,以形成化学钝化的范德华材料。这项研究旨在通过建立ALD前体化学和反应动力学来填补极性或Janus半导体材料的原子层沉积(ALD)中的基本知识差距,以在晶圆尺度上实现高质量的2D极性材料。研究团队与行业合作伙伴一起计划设计,合成,工程和测试新型ALD前体物种,旨在沉积三种不同的原子并建造一个超薄极地半导体库。该项目建立了ALD反应的动力学,并基于Johnson-Mehl-Avrami-Kolmogorov或Monte-Carlo模拟进行建模。该项目检验了以下假设:适当的前体化学,足够高的ALD温度,理想的脉冲/清除时间以及基于氢氧化的表面化学可以在晶圆尺度上制造晶体,激子和电子等级极性半导体。先进的表征技术用于在这些新型量子材料中建立过程结构 - 绩效关系。总体结果旨在使研究人员访问这些全新的高度结晶的极性半导体,这些半导体无法通过当今的制造方法访问。该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子优点和更广泛的影响来通过评估来支持的。

项目成果

期刊论文数量(13)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from 2D Janus Layers
  • DOI:
    10.1002/adfm.202303526
  • 发表时间:
    2023-05
  • 期刊:
  • 影响因子:
    19
  • 作者:
    M. Sayyad;Ying Qin;J. Kopaczek;Adway Gupta;N. Patoary;S. Sinha;Emmie Benard;A. Davis;K. Y
  • 通讯作者:
    M. Sayyad;Ying Qin;J. Kopaczek;Adway Gupta;N. Patoary;S. Sinha;Emmie Benard;A. Davis;K. Y
The synthesis and electrical transport properties of carbon/Cr 2 GaC MAX phase composite microwires
碳/Cr 2 GaC MAX相复合微丝的合成及其电传输性能
  • DOI:
    10.1039/d1nr06780j
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    6.7
  • 作者:
    Siebert, Jan P.;Hajra, Debarati;Tongay, Sefaattin;Birkel, Christina S.
  • 通讯作者:
    Birkel, Christina S.
Giant Effects of Interlayer Interaction on Valence-Band Splitting in Transition Metal Dichalcogenides
  • DOI:
    10.1021/acs.jpcc.1c10631
  • 发表时间:
    2022-05-13
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Benson, Garrett;Costa, Viviane Zurdo;Newaz, Akm
  • 通讯作者:
    Newaz, Akm
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Sefaattin Tongay其他文献

Stable p- and n- type doping of few-layer grapheme/graphite
少层石墨烯/石墨的稳定 p 型和 n 型掺杂
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    10.9
  • 作者:
    Xiuqing Meng;Sefaattin Tongay;Jun Kang;Zhanghui Chen;Fengmin Wu;Shu-Shen Li;Jian-Bai Xia;Jingbo Li;Junqiao Wu
  • 通讯作者:
    Junqiao Wu

Sefaattin Tongay的其他文献

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{{ truncateString('Sefaattin Tongay', 18)}}的其他基金

Discovery and Control of Skyrmions in 2D van der Waals Magnets
二维范德华磁体中斯格明子的发现和控制
  • 批准号:
    2206987
  • 财政年份:
    2022
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Continuing Grant
Spin-orbitronic devices based on 2D Rashba Janus crystals as active materials
基于二维 Rashba Janus 晶体作为活性材料的自旋轨道电子器件
  • 批准号:
    2052527
  • 财政年份:
    2021
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
Bosonic Condensation and Emergent Phenomena in 2D Janus layers and Moiré Lattices
二维 Janus 层和莫尔晶格中的玻色子凝聚和涌现现象
  • 批准号:
    2111812
  • 财政年份:
    2021
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
Wafer-Scale Manufacturing of Two-Dimensional Anisotropic Nanomaterials by Chemical Vapor Deposition
化学气相沉积法晶圆级制造二维各向异性纳米材料
  • 批准号:
    1933214
  • 财政年份:
    2019
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
Discovery and Fundamental Investigation of Emergent Phenomena in Novel 2D Magnets
新型二维磁体中涌现现象的发现和基础研究
  • 批准号:
    1904716
  • 财政年份:
    2019
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Continuing Grant
EAGER: The Fundamentals of Exotic Exciton Complexes in 2D Janus Semiconductors
EAGER:二维 Janus 半导体中奇异激子复合物的基础知识
  • 批准号:
    1955889
  • 财政年份:
    2019
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
EAGER: Enabling Quantum Leap: Room temperature Quantum Logic operations Enabled by Quantum Emitter Arrays in 2D artificial Superlattices
EAGER:实现量子飞跃:二维人造超晶格中的量子发射器阵列实现室温量子逻辑运算
  • 批准号:
    1838443
  • 财政年份:
    2018
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
Manufacturing of Two-Dimensional Metal-Organic Framework Nanosheets by Two-Phase Solution Method
两相溶液法制备二维金属有机框架纳米片
  • 批准号:
    1825594
  • 财政年份:
    2018
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
Nanomanufacturing of 3D Networks of 2D Materials for High Materials Performance
2D 材料 3D 网络纳米制造,实现高材料性能
  • 批准号:
    1561839
  • 财政年份:
    2016
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Standard Grant
CAREER: Point Defects in Two-dimensional Material Systems: Fundamentals and New Perspectives
职业:二维材料系统中的点缺陷:基础知识和新视角
  • 批准号:
    1552220
  • 财政年份:
    2016
  • 资助金额:
    $ 41.09万
  • 项目类别:
    Continuing Grant

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