BRITE Pivot: Dynamic Strain Engineering of Atomically Thin Semiconductors

BRITE Pivot：原子薄半导体的动态应变工程

• 批准号: 2135734
• 负责人: SungWoo Nam
• 金额: $ 52.56万
• 依托单位: University of California-Irvine
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-03-15 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2135734&HistoricalAwards=false
• 关键词: BRITE; Pivot; Dynamic; Strain; Engineering

Continued advances in micro- and nano-electronics require a fundamental rethinking in the approach behind device concept, manufacturing, architecture, energy efficiency, and modeling and simulation. For example, the use of deformation or strain, in particular dynamic strain, has remain largely unexplored. This Boosting Research Ideas for Transformative and Equitable Advances in Engineering (BRITE) Pivot award supports fundamental research to elucidate our understanding beyond static straining by bringing dynamic, high frequency mechanical resonances to strain engineering of atomically thin semiconductors. Dynamic strain modulated properties of these semiconductors will enable reconfigurable micro- and nano-electronic and photonic technologies. The advances made here are expected to impact the micro- and nano-electronics systems industry and facilitate the continuity of United States’ leading position in semiconductors. As part of the award, the lead researcher will also receive training in design, fabrication, and characterization of high frequency small scale electromechanical systems as a visiting researcher at the NASA Jet Propulsion Laboratory (JPL). Graduate students too will be exposed to JPL’s collaborative environment and mentoring. Additionally, the award will be used to engage minority and women, veterans, and high school students in nanoengineering research via summer opportunities and field trips.This research addresses the knowledge gap in ultrafast strain engineering and dynamic strain-coupled properties of two-dimensional (2D), atomically thin semiconductors. Dynamically tunable, high frequency surface acoustic waves (SAWs) will be employed as a mean to modulating local strain in various 2D semiconductors. By pushing the SAW modulation frequency in GHz regime, the effects of dynamic straining or matched mechanical resonance and optical (lifetime of exciton) transition on optoelectronic properties will be investigated. Another focus of the research will be on the coupling of SAW with the lattice straining and local strain reconfigurability in transition metal dichalcogenides (TMD) semiconductors under different SAW patterns for modulated exciton devices. Multiscale, multiphysics modeling of dynamic straining will be used to build a comprehensive understanding of these dynamically reconfigurable local strain and strain-coupled optoelectronic phenomena.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

微电子和纳米电子的持续发展需要从根本上重新思考器件概念、制造、架构、能效以及建模和仿真背后的方法。例如，变形或应变，特别是动态应变的使用在很大程度上仍未被探索。这个促进工程变革和公平进步的研究思路（BRITE）枢轴奖支持基础研究，通过将动态，高频机械共振引入原子薄半导体的应变工程来阐明我们对静态应变的理解。这些半导体的动态应变调制特性将使可重构的微和纳米电子和光子技术成为可能。这些进展预计将影响微电子和纳米电子系统行业，并促进美国在半导体领域领先地位的持续性。作为该奖项的一部分，首席研究员还将作为NASA喷气推进实验室（JPL）的访问研究员接受高频小型机电系统的设计，制造和表征方面的培训。研究生也将接触到喷气推进实验室的协作环境和指导。此外，该奖项还将用于通过暑期机会和实地考察吸引少数民族和妇女、退伍军人和高中生参与纳米工程研究。这项研究解决了超快应变工程和二维（2D）原子薄半导体动态应变耦合特性的知识缺口。动态可调谐的高频表面声波（SAW）将被用作调制各种二维半导体中的局部应变的手段。通过将SAW调制频率推到GHz范围内，将研究动态应变或匹配机械共振以及光学（激子寿命）跃迁对光电性质的影响。研究的另一个重点将是SAW与调制激子器件的不同SAW模式下的过渡金属二硫族化物（TMD）半导体中的晶格应变和局部应变重构的耦合。动态应变的多尺度、多物理场建模将用于建立对这些动态可重构局部应变和应变耦合光电现象的全面理解。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

2D layered materials and heterostructures: Past, present, and a bright future

二维层状材料和异质结构：过去、现在和光明的未来

• DOI: 10.1016/j.matt.2022.11.030
• 发表时间: 2023
• 期刊: Matter
• 影响因子: 18.9
• 作者: Glavin, Nicholas R.;Nam, SungWoo
• 通讯作者: Nam, SungWoo

Opportunities for Nanomaterials in Stretchable and Free‐Form Displays

• DOI: 10.1002/smsc.202300143
• 发表时间: 2024-01
• 期刊: Small Science
• 作者: Yeageun Lee;Weilin Guan;Ezekiel Y. Hsieh;SungWoo Nam