Aluminium-Scandium as bondpad chipmetallisation for copper wire bonding

铝-钪作为铜线键合的键合芯片金属化

• 批准号: 252741903
• 负责人: Professorin Dr.-Ing. Ute Geißler
• 金额: --
• 依托单位: Fachbereich Ingenieur- und Naturwissenschaften (INW)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2015-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/252741903?language=en
• 关键词: Aluminium; Scandium; bondpad; chipmetallisation; copper

In this project it is intended to process and investigate an Aluminium-Scandium alloy as an alternative chip-metallisation for copper wire bonding. Aluminium alloys with a content of 0.1 to 0.3 % Scandium show an increased yield strength of up to 140-200 MPa compared to 20 MPa for pure aluminium at room temperature. Scandium is an alloying element which forms heat resisting spherical Al3Sc-precipitattions with particle sizes of less than 10 nm. Resulting from a lattice mismatch of 1.9% between Al-matrix and the Al3Sc-particles, the precipitations improve the strength and inhibit grain growth processes.It is known that in ultrasonic wire bonding process the used pure Aluminium, AlSi1 and AlSi1Cu0,5 alloys tend to undergo softening by dynamic recrystallization and dynamic recovery. These softening processes can be inhibited by the very fine Al3Sc-precipitations.It is planned to investigate the deformation- and softening behavior of 1-5 µm thick AlSc-layers during ultrasonic bonding with copper wire by varying bonding force and ultrasonic power. Additionally, a reduction of the Al-splashing when using AlSc as chipmetallisation is expected. The results will help to improve the copper wire bonding process by reducing cratering.

在这个项目中，它的目的是加工和研究铝-钪合金作为铜线键合的替代芯片金属化。含0.1%至0.3%Sc的铝合金在室温下的屈服强度比纯铝的20 Mpa高达140-200 Mpa。Sc是一种合金元素，可形成颗粒尺寸小于10 nm的耐热球形Al3Sc析出物。由于Al基体和Al3Sc颗粒之间存在1.9%的晶格失配，析出物提高了强度，抑制了晶粒长大过程。众所周知，在超声波引线键合过程中，所用的纯铝、AlSi1和AlSi1Cu0.5合金容易发生动态再结晶和动态回复软化。这些软化过程可以被非常细小的Al3Sc析出所抑制。计划通过改变键合力和超声功率来研究1-5微米厚的AlSc层在铜线超声键合过程中的变形和软化行为。此外，当使用ALSC作为芯片金属化时，预计会减少铝飞溅。研究结果将有助于通过减少凹坑来改进铜线键合工艺。

项目成果

Aluminum-Scandium: A Material for Semiconductor Packaging

铝钪：半导体封装材料

• DOI: 10.1007/s11664-016-4756-2
• 发表时间: 2016
• 期刊: Journal of Electronic Materials
• 影响因子: 2.1
• 作者: Ute Geissler;Sven Thomas;Martin Schneider-Ramelow;Biswajit Mukopadhi;Klaus-Dieter Lang
• 通讯作者: Klaus-Dieter Lang