SBIR Phase I: Silicon Carbide Radio Frequency Switches

这个小型企业创新研究(SBIR)第一阶段项目专注于无线通信技术，特别是一种名为碳化硅(SIC)的特殊半导体的开发，这种半导体有可能给该行业带来革命性的变化。与传统半导体不同，SIC可以在更高的功率水平和恶劣的环境下运行，使其成为无线通信设备的理想选择。目前，该行业主要依赖氮化镓(GaN)半导体，这种半导体不仅稀有，而且大多是进口的，这引发了对国家安全的担忧。通过证明SIC可以在射频(RF)应用中赶上甚至超过GaN的性能，该项目旨在为美国(U.S.)蓬勃发展的SIC射频半导体产业铺平道路。据估计，到2024年，仅射频交换机市场的价值就将达到20亿美元。一款成功的SIC射频开关产品不仅将在这一市场占据相当大的份额，还将确立美国在射频半导体技术方面的领先地位。该项目有可能创造就业机会，促进国内半导体行业的创新，并通过减少对外国生产的半导体材料的依赖来增强国家安全。这个小型企业创新研究(SBIR)第一阶段项目将生产具有商业竞争力的由碳化硅制成的射频开关。射频开关旨在用于低于6 GHz的蜂窝基础设施应用，如基站，在这些应用中，高功率和坚固耐用是传统的基于硅的技术难以实现的。碳化硅，更具体地说，碳化硅金属氧化物半导体场效应晶体管(MOSFET)，在电动汽车行业获得了巨大的市场份额。相比之下，碳化硅MOSFET在射频行业中基本上是不存在的。主要原因是迁移率较低，导致高导通电阻和高关态电容。对于射频开关，产品的通态电阻和关态电容是关键技术指标，数值越低越好。该项目开发了两项半导体创新，以减少这些因素，同时处理高功率水平。研究重点是开发半导体制造工艺，以生产与现有高功率射频开关竞争的射频开关集成电路产品，例如由GaN制成的插入损耗低于0.8分贝至6 GHz、隔离度约为20分贝、处理高达50 dBm/100 W的高峰值射频功率的产品。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

This Small Business Innovation Research (SBIR) Phase I project focuses on wireless communication technolog, specifically the development of a special semiconductor known as silicon carbide (SiC), which has the potential to revolutionize the industry. Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns. By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024. A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S, as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials. This Small Business Innovation Research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies. SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance. For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels. Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.