SBIR Phase I: Silicon Carbide Radio Frequency Switches

SBIR 第一阶段：碳化硅射频开关

• 批准号: 2334387
• 负责人: Albert Kumar
• 金额: $ 27.5万
• 依托单位: CARBIDE RADIO INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-12-01 至 2024-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2334387&HistoricalAwards=false
• 关键词: SBIR; Phase; Silicon; Carbide; Radio

This Small Business Innovation Research (SBIR) Phase I project focuses on wireless communication technolog, specifically the development of a special semiconductor known as silicon carbide (SiC), which has the potential to revolutionize the industry. Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns. By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024. A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S, as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials. This Small Business Innovation Research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies. SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance. For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels. Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这项小型企业创新研究（SBIR）第一阶段项目侧重于无线通信技术，特别是一种被称为碳化硅（SiC）的特殊半导体的开发，它有可能彻底改变该行业。与传统半导体不同，SiC可以在更高的功率水平和恶劣的环境下工作，使其成为无线通信设备的理想选择。目前，半导体产业主要依靠氮化镓（GaN）半导体，这种半导体不仅稀有，而且大部分都是进口的，令人担忧国家安全问题。通过证明SiC可以在射频（RF）应用中匹配甚至超越GaN的性能，该项目旨在为美国（美国）强大的SiC射频半导体行业铺平道路。到2024年，仅射频开关市场就估计价值20亿美元。一个成功的SiC射频开关产品不仅会占据这个市场的重要份额，而且还会使美国成为射频半导体技术的领导者。该项目有望创造就业机会，促进国内半导体产业的创新，并通过减少对外国生产的半导体材料的依赖，提高国家安全。这个小企业创新研究（SBIR）第一阶段项目将生产具有商业竞争力的SiC射频开关。RF开关旨在用于低于6 GHz的蜂窝基础设施应用，例如基站，在这些应用中，传统的硅基技术难以实现高功率和坚固性。SiC，更具体地说，SiC金属氧化物半导体场效应晶体管（mosfet），已经在电动汽车行业获得了显著的市场份额。相比之下，SiC mosfet在射频工业中基本上不存在。主要原因是迁移率差，导致导通状态电阻高，关断状态电容高。对于射频开关来说，产品的通状态电阻和关状态电容是关键规格，数值越小越好。该项目开发了两项半导体创新，以减少这些因素，同时处理高功率水平。研究重点是开发半导体制造工艺，以生产与现有高功率RF开关竞争的RF开关集成电路产品，例如由GaN制成的插入损耗小于0.8 dB，高达6 GHz，隔离度约为20 dB，并处理峰值RF功率水平为50 dBm/100 W。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。