SBIR Phase I: Silicon Carbide Radio Frequency Switches

这个小型企业创新研究（SBIR）第一阶段项目的重点是无线通信技术，特别是一种称为碳化硅（SiC）的特殊半导体的开发，它有可能彻底改变行业。与传统半导体不同，SiC可以在更高的功率水平和恶劣的环境中工作，使其成为无线通信设备的理想选择。目前，该行业主要依赖氮化镓（GaN）半导体，这种半导体不仅罕见，而且大多数是进口的，引起了国家安全问题。 通过证明SiC在射频（RF）应用中的性能可以匹配甚至超过GaN，该项目旨在为美国（美国）强大的SiC RF半导体行业铺平道路。到2024年，仅射频开关市场估计就价值20亿美元。一个成功的SiC射频开关产品不仅将占据这一市场的重要份额，还将确立美国作为射频半导体技术领导者的地位。 该项目有可能创造就业机会，促进国内半导体行业的创新，并通过减少对外国生产的半导体材料的依赖来加强国家安全。该小型企业创新研究（SBIR）第一阶段项目将生产具有商业竞争力的SiC射频开关。RF开关旨在用于低于6 GHz的蜂窝基础设施应用，例如基站，在这些应用中，传统硅基技术难以实现高功率和耐用性。SiC，更具体地说，SiC金属氧化物半导体场效应晶体管（MOSFET）在电动汽车行业中获得了巨大的市场份额。相比之下，SiC MOSFET在RF行业中基本上不存在。主要原因是迁移率差，导致高的导通电阻和高的关断电容。对于RF开关，产品导通状态电阻和关断状态电容是关键规格，数值越低越好。该项目开发了两种半导体创新技术，以在处理高功率水平时减少这些因素。研究集中于开发半导体制造工艺以生产RF开关集成电路产品，该RF开关集成电路产品与现有的高功率RF开关竞争，诸如由GaN制成的具有小于0.8dB直至6 GHz的插入损耗、约20 dB的隔离度、和处理50 dBm/s的高峰RF功率电平100 W.该奖项反映了NSF的法定使命，并被认为值得通过使用基金会的智力价值和更广泛的影响审查标准。

This Small Business Innovation Research (SBIR) Phase I project focuses on wireless communication technolog, specifically the development of a special semiconductor known as silicon carbide (SiC), which has the potential to revolutionize the industry. Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns. By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024. A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S, as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials. This Small Business Innovation Research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies. SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance. For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels. Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.