CAREER: Non-volatile memory devices based on sliding ferroelectricity

职业：基于滑动铁电的非易失性存储器件

• 批准号: 2339093
• 负责人: Ying Wang
• 金额: $ 53.17万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2024
• 资助国家: 美国
• 起止时间: 2024-09-01 至 2029-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2339093&HistoricalAwards=false
• 关键词: CAREER; Non; volatile; memory; devices

This project will deliver a range of inclusive research and educational activities, such as memory research opportunities, outreach programs, and scientific lectures, targeting diverse groups from high school students and teachers to undergraduates. Next-generation memory technology is significant in addressing the escalating data capacity and energy demands of modern computing and data-driven applications such as the Internet of Things, smart manufacturing, and AI-empowered medical care. With the need for higher data densities, lower power consumption, faster access times, traditional memory solutions are reaching their limits. This project seeks to develop a new type of memory device—sliding ferroelectric tunnel junctions. It aims to harness the unique advantages of nonvolatile sliding ferroelectricity in atomically thin layered materials, which includes ultralow energy consumption, fast switching speed and ultracompact footprint. The resulting memory devices can enhance the performance capabilities essential for emergent technologies in artificial intelligence, big data analytics, and edge computing. A new type of ferroelectricity has been discovered in van der Waals materials, namely sliding ferroelectricity. The relative arrangement of atomic layers can break the mirror symmetry and inversion symmetry, leading to vertical spontaneous polarization. The ferroelectric switching between two opposite polarization is accomplished by relative lateral sliding between adjacent atomic layers with remarkably ultralow switching energy barriers and ultrafast switching time. Together with the advantage of the atomically clean surface of van der Waals materials for constructing robust ferroelectric tunneling junctions, such novel sliding ferroelectricity is promising for next-generation memory, logic and computational technologies. This CAREER proposal seeks to understand sliding ferroelectric orders, their role in ferroelectric tunneling junctions with an objective to realize memory devices with ultrafast operation speed, ultralow energy consumption and multistate functionalities. The project encompasses comprehensive studies including fundamental understanding of sliding ferroelectricity in response to various electrical and mechanical boundary conditions, ferroelectric tunneling junction device prototyping, benchmark, and metric optimization, and multistate device development. New techniques developed in this project will be integrated into undergraduate and graduate education to foster enthusiasm for STEM careers among the future generation.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该项目将提供一系列包容性的研究和教育活动，如记忆研究机会，外展计划和科学讲座，针对从高中学生和教师到本科生的不同群体。下一代存储器技术在满足现代计算和数据驱动应用（如物联网、智能制造和人工智能医疗）不断增长的数据容量和能源需求方面具有重要意义。随着对更高数据密度、更低功耗、更快访问时间的需求，传统存储器解决方案正在达到其极限。本计画旨在发展一种新型记忆元件-滑动铁电隧道接面。它旨在利用原子级薄层材料中非易失性滑动铁电性的独特优势，包括超低能耗，快速开关速度和超紧凑的足迹。由此产生的存储设备可以增强人工智能、大数据分析和边缘计算等新兴技术所必需的性能。在货车德瓦耳斯材料中发现了一种新型的铁电性，即滑动铁电性。原子层的相对排列可以打破原子的镜像对称性和反转对称性，导致垂直自发极化。两个相反极化之间的铁电切换是通过相邻原子层之间的相对横向滑动来实现的，具有显著超低的切换势垒和超快的切换时间。结合货车德瓦耳斯材料原子级洁净表面的优点，这种新型滑动铁电性有望用于下一代存储器、逻辑和计算技术。这个CAREER提案旨在了解滑动铁电顺序，它们在铁电隧道结中的作用，目的是实现具有超快操作速度，超低能耗和多态功能的存储器件。该项目包括全面的研究，包括响应各种电气和机械边界条件的滑动铁电性的基本理解，铁电隧道结器件原型，基准和度量优化，以及多态器件开发。该项目开发的新技术将被整合到本科和研究生教育中，以培养下一代对STEM职业的热情。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。