2D Heterostructure Non-volatile Spin Memory Technology

2D 异质结构非易失性旋转存储器技术

• 批准号: 10101734
• 金额: $ 75.54万
• 依托单位: THE UNIVERSITY OF MANCHESTER
• 依托单位国家: 英国
• 项目类别: EU-Funded
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=10101734
• 关键词: 2D; Heterostructure; Non; volatile; Spin

In modern society, as the use of information technology is rapidly increasing, it is necessary to develop new non-volatile, faster, and energy-efficient electronics. Spintronic technologies open promising routes to achieve this. However, devices based on conventional materials are still too inefficient for applications in consumer electronics. Here, we propose to develop a new energy-efficient spintronic memory device platform based on emerging atomically-thin two-dimensional (2D) quantum materials for the next generation of memory technologies. The 2D topological spin-orbit materials can generate a giant current-induced spin polarization, whereas room temperature 2D magnets provide the prospective of electric control of magnetism. The proposed van der Waals heterostructure spintronic devices consisting of 2D topologicalspin-orbit materials and 2D magnets will enable exceptionally efficientspin-orbit torque (SOT) functionality with low current densities and ultrafast magnetization switching speed. All-2D multifunctional SOT will provide a strong synergy between spintronics and 2D material and take thisresearch from TRL2 to 4. We will employ novel methodsto control their SOT properties – by the twist angle between the layers, topological aspects, crystal symmetries, proximity interaction, and strong electric field effects. To achieve this challenging goal, this project brings together pioneering and world-leading experimental and theoretical researchers and a company in the field of spintronics and 2D materials in Europe. The ultimate demonstration of all-2D SOT device units will merge the field of spintronics and twistronics, allowing for physical and electrical tuning parameters to achieve enhanced control over the device functionalities. These developments will enable groundbreaking 2D SOT technologies for low-power, non-volatile, ultrafast, and scalable data storage and processing devices and possibly new spin-based computing paradigms and architectures.

在现代社会中，随着信息技术的使用迅速增加，有必要开发新的非易失性，更快，更节能的电子产品。自旋电子技术为实现这一目标开辟了有前途的途径。然而，基于传统材料的设备对于消费电子产品的应用来说仍然太低效。在这里，我们建议开发一种新的节能自旋电子存储器设备平台的基础上新兴的原子薄的二维（2D）量子材料的下一代存储器技术。二维拓扑自旋轨道材料可以产生巨大的电流诱导自旋极化，而室温二维磁体提供了电控制磁性的前景。提出的货车瓦异质结自旋电子器件由2D topologicalspin-orbit材料和2D磁铁组成，将使非常高效的自旋轨道力矩（SOT）功能与低电流密度和超快的磁化切换速度。全二维多功能SOT将在自旋电子学和二维材料之间提供强大的协同作用，并将这项研究从TRL 2提升到4。我们将采用新的方法来控制它们的SOT特性-通过层间的扭曲角，拓扑方面，晶体对称性，邻近相互作用和强电场效应。为了实现这一具有挑战性的目标，该项目汇集了欧洲自旋电子学和2D材料领域的先驱和世界领先的实验和理论研究人员以及一家公司。全二维SOT器件单元的最终演示将合并自旋电子学和双电子学领域，允许物理和电气调谐参数，以实现对器件功能的增强控制。这些发展将为低功耗、非易失性、超快和可扩展的数据存储和处理设备以及可能的新的基于自旋的计算范式和架构带来突破性的2D SOT技术。