2D Heterostructure Non-volatile Spin Memory Technology

2D 异质结构非易失性旋转存储器技术

• 批准号: 10101734
• 金额: $ 75.54万
• 依托单位: THE UNIVERSITY OF MANCHESTER
• 依托单位国家: 英国
• 项目类别: EU-Funded
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=10101734
• 关键词: 2D; Heterostructure; Non; volatile; Spin

In modern society, as the use of information technology is rapidly increasing, it is necessary to develop new non-volatile, faster, and energy-efficient electronics. Spintronic technologies open promising routes to achieve this. However, devices based on conventional materials are still too inefficient for applications in consumer electronics. Here, we propose to develop a new energy-efficient spintronic memory device platform based on emerging atomically-thin two-dimensional (2D) quantum materials for the next generation of memory technologies. The 2D topological spin-orbit materials can generate a giant current-induced spin polarization, whereas room temperature 2D magnets provide the prospective of electric control of magnetism. The proposed van der Waals heterostructure spintronic devices consisting of 2D topologicalspin-orbit materials and 2D magnets will enable exceptionally efficientspin-orbit torque (SOT) functionality with low current densities and ultrafast magnetization switching speed. All-2D multifunctional SOT will provide a strong synergy between spintronics and 2D material and take thisresearch from TRL2 to 4. We will employ novel methodsto control their SOT properties – by the twist angle between the layers, topological aspects, crystal symmetries, proximity interaction, and strong electric field effects. To achieve this challenging goal, this project brings together pioneering and world-leading experimental and theoretical researchers and a company in the field of spintronics and 2D materials in Europe. The ultimate demonstration of all-2D SOT device units will merge the field of spintronics and twistronics, allowing for physical and electrical tuning parameters to achieve enhanced control over the device functionalities. These developments will enable groundbreaking 2D SOT technologies for low-power, non-volatile, ultrafast, and scalable data storage and processing devices and possibly new spin-based computing paradigms and architectures.

在现代社会，随着信息技术的使用迅速增加，有必要开发新的非易失性、快速、节能的电子产品。自旋电子技术为实现这一目标开辟了前景光明的道路。然而，基于传统材料的设备仍然效率太低，无法应用于消费电子产品。在这里，我们建议开发一种新的能效自旋电子存储设备平台，该平台基于新兴的原子薄二维(2D)量子材料，用于下一代存储技术。二维拓扑自旋轨道材料可以产生大电流诱导的自旋极化，而室温二维磁体提供了电控磁学的前景。由2D拓扑结构的自旋轨道材料和2D磁体组成的范德华异质结构自旋电子器件将以低的电流密度和超快的磁化转换速度实现极其高效的自旋轨道扭矩(SOT)功能。全2D多功能SOT将在自旋电子学和2D材料之间提供强大的协同作用，并将这项研究从TRL2提高到4。我们将使用新的方法来控制它们的SOT特性-通过层之间的扭角、拓扑面、晶体对称性、邻近相互作用和强大的电场效应。为了实现这一具有挑战性的目标，该项目汇集了开创性的和世界领先的实验和理论研究人员，以及欧洲自旋电子学和2D材料领域的一家公司。全2D SOT器件单元的最终演示将合并自旋电子学和双电子学领域，允许物理和电气调整参数，以实现对设备功能的增强控制。这些发展将使开创性的2D SOT技术能够用于低功耗、非易失性、超高速和可扩展的数据存储和处理设备，并可能实现基于自旋的新计算范例和架构。