2D Heterostructure Non-volatile Spin Memory Technology

2D 异质结构非易失性旋转存储器技术

• 批准号: 10101734
• 金额: $ 75.54万
• 依托单位: THE UNIVERSITY OF MANCHESTER
• 依托单位国家: 英国
• 项目类别: EU-Funded
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=10101734
• 关键词: 2D; Heterostructure; Non; volatile; Spin

In modern society, as the use of information technology is rapidly increasing, it is necessary to develop new non-volatile, faster, and energy-efficient electronics. Spintronic technologies open promising routes to achieve this. However, devices based on conventional materials are still too inefficient for applications in consumer electronics. Here, we propose to develop a new energy-efficient spintronic memory device platform based on emerging atomically-thin two-dimensional (2D) quantum materials for the next generation of memory technologies. The 2D topological spin-orbit materials can generate a giant current-induced spin polarization, whereas room temperature 2D magnets provide the prospective of electric control of magnetism. The proposed van der Waals heterostructure spintronic devices consisting of 2D topologicalspin-orbit materials and 2D magnets will enable exceptionally efficientspin-orbit torque (SOT) functionality with low current densities and ultrafast magnetization switching speed. All-2D multifunctional SOT will provide a strong synergy between spintronics and 2D material and take thisresearch from TRL2 to 4. We will employ novel methodsto control their SOT properties – by the twist angle between the layers, topological aspects, crystal symmetries, proximity interaction, and strong electric field effects. To achieve this challenging goal, this project brings together pioneering and world-leading experimental and theoretical researchers and a company in the field of spintronics and 2D materials in Europe. The ultimate demonstration of all-2D SOT device units will merge the field of spintronics and twistronics, allowing for physical and electrical tuning parameters to achieve enhanced control over the device functionalities. These developments will enable groundbreaking 2D SOT technologies for low-power, non-volatile, ultrafast, and scalable data storage and processing devices and possibly new spin-based computing paradigms and architectures.

在现代社会中，随着信息技术的使用正在迅速增加，有必要开发新的非易失性，更快和节能的电子产品。 Spintronic Technologies开放了实现这一目标的承诺路线。但是，基于常规材料的设备对于消费电子产品的应用仍然太低了。在这里，我们建议基于新兴的原子二维（2D）量子材料开发一个新的节能旋转记忆设备平台，用于下一代记忆技术。 2D拓扑自旋轨道材料可以产生巨大的电流引起的自旋极化，而室温2D磁铁可提供磁性电力控制的前景。拟建的范德华（Van der Waals）异质结构旋转设备由2D拓扑旋转轨道材料和2D磁体组成，将实现具有低电流密度和超快速磁化开关速度的异常高效的自旋轨道扭矩（SOT）功能。 All-2D多功能SOT将在SpinTronics和2D材料之间提供强大的协同作用，并将TRL2的此研究从TRL2到4。我们将采用新颖的方法来控制其SOT特性 - 通过层，拓扑方面，晶体对称性，近距离相互作用，接近性相互作用和强电场效应之间的扭曲角度。为了实现这一挑战目标，该项目汇集了开创性和领先的实验和理论研究人员以及欧洲旋转型和2D材料领域的公司。 All-2D SOT设备单元的最终演示将融合自旋形成和扭曲功能，从而使物理和电气调谐参数可以增强对设备功能的控制。这些发展将为低功率，非挥发性，超快和可扩展的数据存储和处理设备以及可能的新的基于旋转的计算范式和架构提供开创性的2D SOT技术。