Ultrabright sources of single and entangled photon pairs

单光子和纠缠光子对的超亮源

• 批准号: 258767146
• 负责人: Professor Dr. Peter Michler
• 金额: --
• 依托单位: Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/258767146?language=en
• 关键词: Ultrabright; sources; single; entangled; photon

The aim of this project is the fabrication of optically pumped ultrabright sources of indistinguishable single and entangled photons in the near infrared spectral range and optically and electrically pumped single photon sources in the red spectral range. The first goal will be ultimately achieved by the combination of a newly designed cavity structure including positioned quantum dots (QD), waveguide coupling and resonant excitation techniques. Therefore, InAs/GaAs quantum dots embedded in high reflective DBR structures will be precisely placed with nanometer accuracy into micropillars. Then tapered one-dimensional nanowires will be connected to these pillars to enable resonant side-excitation with a high laser stray-light suppression. With this schema, we expect to establish a very bright source of entangled photons with a high fidelity and low dephasing. The second goal will be the realization of an ultrabright electrically driven single photon source in the visible red spectral range with GaInP/AlGaInP material system. Here also quantum dots, this time InP QDs, will be embedded into high reflective DBRs, which are now doped to allow the electrical contacting. Then, either pillar structures or mesas for resonant cavity LEDs (RC-LEDs) with the above-mentioned precise accuracy will be formed. The RC-LEDs will additionally receive a narrow oxide aperture to ensure a low current flow only through the single QD in the middle of the device. After finalizing both types of structures, an electrically driven source with a high GHz repetition rate, high collection efficiency and low background will be available. These challenging goals can only be realized by the present cooperation of the world leading groups in the fabrication and characterization of these kind of photon sources. Special key qualifications are the in-situ lithography process developed in Pascale Senellarts group and the side-excitation technique for resonant exciton and biexciton preparation pioneered by Peter Michlers group in Stuttgart.

本项目的目的是在近红外光谱范围内制造难以区分的单光子和纠缠光子的光抽运超亮光源和在红光谱范围内的光和电抽运单光子源。第一个目标将最终通过结合新设计的腔结构，包括定位量子点（QD），波导耦合和共振激励技术来实现。因此，嵌入在高反射DBR结构中的InAs/GaAs量子点将以纳米精度精确地放置在微柱中。然后将锥形一维纳米线连接到这些柱上，以实现高激光杂散光抑制的共振侧激发。利用这种模式，我们期望建立一个高保真度和低消相的非常明亮的纠缠光子源。第二个目标是利用GaInP/AlGaInP材料系统在可见红光光谱范围内实现超亮电驱动单光子源。在这里，量子点，这次是InP量子点，将被嵌入到高反射dbr中，dbr现在被掺杂以允许电接触。然后，将形成具有上述精确精度的谐振腔led （rc - led）的柱状结构或台面。rc - led还将获得一个狭窄的氧化物孔径，以确保低电流仅通过器件中间的单个量子点。在完成这两种结构之后，一种具有高GHz重复率、高收集效率和低背景的电驱动源将可用。这些具有挑战性的目标只能通过目前世界领先的团队在这些光子源的制造和表征方面的合作来实现。特殊的关键资格是Pascale Senellarts小组开发的原位光刻工艺和斯图加特Peter Michlers小组首创的共振激子和双激子制备的侧激励技术。

项目成果

Overcoming correlation fluctuations in two-photon interference experiments with differently bright and independently blinking remote quantum emitters

• DOI: 10.1103/physrevb.97.195414
• 发表时间: 2018-03
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: J. Weber;J. Kettler;H. Vural;M. Muller;J. Maisch;M. Jetter;S. Portalupi;P. Michler

Single-photon light-emitting diodes based on preselected quantum dots using a deterministic lithography technique

• DOI: 10.1063/1.5091751
• 发表时间: 2019-02
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Marc Sartison;Simon Seyfferle;Sascha Kolatschek;Stefan Hepp;M. Jetter;P. Michler;S. Portalupi

Deterministic integration and optical characterization of telecom O-band quantum dots embedded into wet-chemically etched Gaussian-shaped microlenses

• DOI: 10.1063/1.5038271
• 发表时间: 2018-07-16
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Sartison, Marc;Engel, Lena;Portalupi, Simone Luca
• 通讯作者: Portalupi, Simone Luca

Deterministic fabrication of circular Bragg gratings coupled to single quantum emitters via the combination of in-situ optical lithography and electron-beam lithography

• DOI: 10.1063/1.5050344
• 发表时间: 2019-01
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Sascha Kolatschek;Stefan Hepp;Marc Sartison;M. Jetter;P. Michler;S. Portalupi