Hybrid semiconductor-superconductor photonic quantum circuits

混合半导体-超导光子量子电路

• 批准号: 279609524
• 负责人: Professor Dr. Peter Michler
• 金额: --
• 依托单位: Institut für Mikro- und Nanoelektronische Systeme (IMS)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/279609524?language=en
• 关键词: Hybrid; semiconductor; superconductor; photonic; quantum

The aim of this project is the realization of an integrated platform of quantum optical devices for the demonstration of a CNOT functionality on a semiconductor chip. This implies in the proposed case, the realization of single-photon sources, of low-loss single-mode waveguide structures and on-chip cavities combined with superconductor nanowire single-photon detectors (SNSPD). The realization of this architecture was not demonstrated so far and would be a major step towards a miniaturized application in the photonic quantum technologies. It can only be achieved in a detailed understand-ing of the physical principles of the photon detection and generation process in the integrated envi-ronment. The platform consists of GaAs waveguides where InAs quantum dots (QD) were embed-ded as light emitters and NbN nanowires are evanescent coupled to these waveguides.To realize this goal, different intermediate steps have to be performed. Next to the realization of the waveguide, splitter, emitter and detector structures, we have to study the emission coupling into the waveguide in detail. For the targeted functionality, the created photons in different waveguide arms have to be indistinguishable. Therefore, different resonant excitation processes have to be applied in combination with the electrical adjustment of the different QD transition energies to one pre-selected energy via the Stark shift. Combinations of waveguide couplers with different splitting rati-os determine the photonic integrated circuit. Waveguide beam splitters adjusted to the single photon wavelength are the core of the circuit and will as well be used to prove the indistinguishability of the photons of the two different InAs QDs by two-photon interference measurements. Parallel to the examination of the emitter, the detector implementation will be studied. The super-conducting nanowires have to be optimized to allow a close to 100% detection efficiency of the sin-gle photons at 920 nm wavelength of QD emission on GaAs wafers. Thus, all the key parameters of nanowire such as coupling efficiency, absorption, intrinsic detection efficiency, as well as timing jitter have to be determined and analyzed in detail in dependence of different detector configura-tions for their optimization. Additionally, the SNSPDs and the readout electronics have to be devel-oped to allow photon number resolving detection in integrated systems. Finally, all components have to be implemented in one chip including filter elements for suppression of the resonant QD excitation and the quantum optical functionality will be demonstrated. These challenging goals can only be realized by the present cooperation of the leading groups in the fabri-cation and characterization of these kinds of high quality single-photon detectors, semiconductor material and single-photon sources.

该项目的目的是实现量子光学器件的集成平台，用于在半导体芯片上演示CNOT功能。这意味着在所提出的情况下，实现单光子源，低损耗单模波导结构和片上腔结合超导纳米线单光子探测器（SNSPD）。这种结构的实现到目前为止还没有得到证实，这将是朝着光子量子技术小型化应用迈出的重要一步。只有详细了解集成环境下光子探测和产生过程的物理原理，才能实现这一目标。该平台由GaAs波导和NbN纳米线组成，其中GaAs波导中嵌入InAs量子点（QD）作为光发射体，NbN纳米线与这些波导进行倏逝波耦合，为了实现这一目标，需要执行不同的中间步骤。在实现波导、分束器、发射器和探测器结构之后，我们必须详细研究发射耦合到波导中。对于目标功能，在不同波导臂中产生的光子必须是不可区分的。因此，不同的共振激发过程必须与通过斯塔克位移将不同的QD跃迁能量电调节到一个预选能量相结合。具有不同分光比的波导耦合器的组合决定了光子集成电路。调整到单光子波长的波导分束器是电路的核心，并且也将用于通过双光子干涉测量来证明两种不同InAs量子点的光子的不可分辨性。在检查发射器的同时，还将研究探测器的实现。超导纳米线必须被优化以允许接近100%的探测效率的单光子在920 nm波长的量子点发射的GaAs晶片上。因此，需要根据不同的探测器结构，对纳米线的耦合效率、吸收、本征探测效率以及时间抖动等关键参数进行详细的分析和确定，以达到最优化。此外，SNSPD和读出电子学必须被开发以允许在集成系统中进行光子数分辨检测。最后，所有组件都必须在一个芯片中实现，包括用于抑制谐振QD激发的滤波器元件，并且将展示量子光学功能。这些具有挑战性的目标只有通过目前在此类高质量单光子探测器、半导体材料和单光子源的制造和表征方面的领导小组的合作才能实现。

项目成果

Fully On-Chip Single-Photon Hanbury-Brown and Twiss Experiment on a Monolithic Semiconductor-Superconductor Platform

• DOI: 10.1021/acs.nanolett.8b02794
• 发表时间: 2018-11-01
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Schwartz, Mario;Schmidt, Ekkehart;Michler, Peter
• 通讯作者: Michler, Peter

Characterization of a Photon-Number Resolving SNSPD Using Poissonian and Sub-Poissonian Light

• DOI: 10.1109/tasc.2019.2905566
• 发表时间: 2018-10
• 期刊: IEEE Transactions on Applied Superconductivity
• 影响因子: 1.8
• 作者: E. Schmidt;E. Reutter;Mario Schwartz;H. Vural;K. Ilin;M. Jetter;P. Michler;M. Siegel