Positioning of single quantum dots inside microcavities - coupling of individual quantum dots

微腔内单个量子点的定位 - 单个量子点的耦合

• 批准号: 21664841
• 负责人: Professor Dr. Peter Michler
• 金额: --
• 依托单位: Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG)
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2006
• 资助国家: 德国
• 起止时间: 2005-12-31 至 2012-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/21664841?language=en
• 关键词: Positioning; single; quantum; dots; inside

The goal of this project is the controlled positioning of individual quantum dots (QD), coupled QDs, or alternatively doping atoms inside a pillar cavity and the study of their quantum optical properties. The exact positioning of the quantum dots will be performed by selfassembled growth of QDs on pre-patterned layers, which will be produced by ex-situ lithography and etching techniques on top of the lower half of a cavity layer which will be grown by molecular beam epitaxy. The positioning of single doping atoms will be performed by a combination of the ion implantation technique and a structured mask. These methods allow the fabrication of pillar cavities with a systematic variation of the relative position between QDs, doping atoms and the optical mode of the pillar cavity, respectively. Time-resolved and photon statistics measurements will be used to study collective effects in the photon emission of pillar cavities in dependence of the number of emitters and on their position inside the cavity.

该项目的目标是控制单个量子点（QD）、耦合量子点或掺杂原子在柱腔中的位置，并研究它们的量子光学性质。量子点的精确定位将通过在预图案化层上的QD的自组装生长来执行，所述预图案化层将通过非原位光刻和蚀刻技术在腔层的下半部分的顶部上产生，所述腔层将通过分子束外延生长。单掺杂原子的定位将通过离子注入技术和结构化掩模的组合来执行。这些方法允许柱腔的制造与量子点之间的相对位置的系统变化，掺杂原子和柱腔的光学模式，分别。时间分辨和光子统计测量将被用来研究集体效应的光子发射柱腔中的发射器的数量和它们在腔内的位置的依赖。