Conference: 2024 Defects in Semiconductors GRC/GRS

非技术描述：半导体对于包括计算、电力、能源和量子信息在内的各种应用都是必不可少的。决定半导体性质的一个关键成分是半导体晶体中的缺陷。因此，了解和控制半导体材料和器件中的缺陷从半导体工业一开始就非常重要。在不断变化的半导体技术格局中，需要在理论、表征和缺陷控制方面取得进步。关于半导体缺陷的戈登研究会议(GRC)每两年举行一次，为科学家和技术人员提供了一个独特的机会，解决与所有半导体材料和器件的缺陷有关的关键问题和机会。会议的非正式形式允许对新的发现和挑战进行全面和坦率的讨论，从而加速发现。戈登研究会议与非常成功的戈登研究研讨会(GRS)相辅相成，该研讨会由研究生和博士后研究员设计，并为他们设计。参加GRS和GRC为年轻科学家提供了一个独特的机会，可以积极参与这一领域的研究，这一领域对半导体和量子技术的现有和未来发展至关重要。会议将汇集广泛的半导体中缺陷的理论、表征、控制和设备影响方面的专家和早期职业科学家。重点领域包括极端条件下的缺陷，低维系统中的缺陷，用于量子信息应用的新的缺陷发现和识别，相关电子系统建模的进展，钙钛矿对缺陷的抵抗和表征方面的突破。技术应用范围从发电、配电和照明的电子学到自旋电子学和量子信息处理。为期两天的GRS先于GRC，让年轻科学家适应戈登会议的独特风格，并鼓励他们与同行分享和展示他们的想法。在GRS/GRC获得的知识将有助于他们的研究工作，并提供机会促进新的研究联系并从该领域的专家那里获得指导。学生和博士后研究员将把他们在GRS/GRC获得的新知识和联系带回他们的研究小组，从而拓宽研究机会和方向。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Non-technical description:Semiconductors are essential for a variety of applications including computing, power, energy and quantum information. A key component in determining a semiconductor’s properties are defects in the semiconductor crystal. Thus, understanding and controlling defects in semiconductor materials and devices has been of fundamental importance to the semiconductor industry from its inception. In the ever-changing landscape of semiconductor technologies, advancements are required in theory, characterization, and control of defects. The Gordon Research Conference (GRC) on Defects in Semiconductors is held biannually and offers a unique opportunity for scientists and technologists to address key questions and opportunities associated with defects across the full spectrum of semiconductor materials and devices. The off-the-record format of the conference allows for full and frank discussion of new discoveries and challenges, enabling the acceleration of discovery. The Gordon Research Conference is complemented by a highly successful Gordon Research Seminar (GRS) designed by and for graduate students and postdoctoral fellows. Attendance at both the GRS and GRC provides young scientists with a unique opportunity to actively engage in this area of research that is of fundamental importance to existing and future developments in semiconductor and quantum technologies. Technical descriptionThe conference will bring together experts and early career scientists in theory, characterization, control, and device impact of defects in a broad range of semiconductors. Focus areas include defects under extreme conditions, defects in low-dimensional systems, new defect discovery and identification for quantum information applications, advances in modelling correlated electron systems, perovskites resistance to defects and breakthroughs in characterization. Technological applications range from electronics for power generation, power distribution, and lighting to spintronics and quantum information processing. The two-day GRS precedes the GRC, acclimatizing young scientists to the unique style of Gordon Conferences and encouraging them to share and present their ideas to their peers. The knowledge gained at the GRS/GRC will assist their research pursuits and provide opportunities to foster new research linkages and obtain mentorship from experts in the field. Students and post-doctoral fellows will take the new knowledge and linkages they gain at the GRS/GRC back to their research groups, thereby broadening research opportunities and direction.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.