Free-standing III/V nanowires will be grown by the VLS growth mode as a post-CMOS process on a (100) Silicon substrate. The wires form an electronic and electro-luminescent device

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The growth of free-standing nanowires opens-up an alternative approach for the fabrication of highly mismatched epitaxial heterostructures. The critical thickness of strained pseudomorphic layers is circumvented by the growth of three-dimensional structures at the nanoscale, where a continuous modification of the lattice along the growth direction becomes feasible. In this contribution, highly mismatched modulation-doped III/V epitaxial wires will be grown by Metal-Organic Vapour-Phase Epitaxy. The objective is the development of a basic process technology for electronic/optoelectronic devices on (100) Silicon substrates. As a demonstrator an electro luminescent devices in the wavelength range of the optical fibre at 1.3 ¿m and 1.55 ¿m shall be fabricated. The process shall be compatible to the post-CMOS technology in terms of temperature budget and crystal orientation of the substrate. The approach is the vapour-liquid (VLS) growth mode. An ensemble of seed elements is produced by an annealing process, which transfers a thin metal film into nanoscaled droplets forming a nanoscaled template. The ensemble of nanowire grown within a single template is used to fabricate the device. A durimide technology is adopted to form device isolation and electrical contacts. The size and the location of the template and hence the device area are defined by optical lithography. This way a monolithically integration of the III/V nanowire devices into a CMOS circuit becomes feasible.