Electrically pumped III/V nanowire light emitters

在光通信的波长范围内发射光的专用电刺激应使用。我们提出用插入的合金半导体作为光活性材料来生长轴向和核壳型纳米线pn结。光的发射应由先进的异质结构纳米线设计和技术控制。光活性区组成应控制光发射的波长。强度和模式光谱将通过表面钝化（E3）、介质涂层（P1）和光学掺杂（P4）来设计。除了波长的控制外，还将重点研究同轴pn异质结构纳米线的电激激光。这种方法的成功与否将通过现有状态寿命测量（P2）来评估。为了在全加工电路（如Si-CMOS）中加速其协整，应适应光电子器件的现场辅助自组装。

Exclusively electrical stimulation shall be used for the emission of light in the wavelength regime of optical communications. We propose to grow axial and core-shell nanowire pn-junctions with inserted alloy semiconductor as the optically active material. The emission of light shall be controlled by advanced hetero structure nanowire design and technology. The composition of the optical active regime shall control the wavelength of light emission. The intensity and the mode spectrum shall be engineered by surface passivation (E3), dielectric coating (P1), and optical doping (P4). In addition to the control of the wavelength the work will focus on the elaboration of electrically stimulated lasing in coaxial pn hetero structure nanowires. The success of this approach will be evaluated by exited-state lifetime measurements (P2). Field-assisted self-assembly shall be adapted to optoelectronic devices in order to speed up their co-integration in fully processed circuits such as Si-CMOS.