Electrically pumped III/V nanowire light emitters

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Exclusively electrical stimulation shall be used for the emission of light in the wavelength regime of optical communications. We propose to grow axial and core-shell nanowire pn-junctions with inserted alloy semiconductor as the optically active material. The emission of light shall be controlled by advanced hetero structure nanowire design and technology. The composition of the optical active regime shall control the wavelength of light emission. The intensity and the mode spectrum shall be engineered by surface passivation (E3), dielectric coating (P1), and optical doping (P4). In addition to the control of the wavelength the work will focus on the elaboration of electrically stimulated lasing in coaxial pn hetero structure nanowires. The success of this approach will be evaluated by exited-state lifetime measurements (P2). Field-assisted self-assembly shall be adapted to optoelectronic devices in order to speed up their co-integration in fully processed circuits such as Si-CMOS.