Nanowire/CMOS Heterogeneous Integration for Next-Generation Communication Systems

纳米线器件最近引起了越来越多的关注，因为它是最有希望的逻辑开关候选之一，在未来20年内缩小限制后，将取代现有的CMOS逻辑门。根据2007年发布的国际半导体技术路线图(ITRS 2007)，纳米线FET是最活跃的，包括Si FinFET，InAs和InSb纳米线FET，以及碳纳米管场效应管(CNT)FET。还指出，即使在开发之初，器件、电路和工艺研究人员之间的合作也是必不可少的，因为这样的器件被用作也包括主流CMOS的大规模集成电路的一部分。

Nanowire devices have drawn increasing attention recently as one of the most promising candidates for logic switches that will take over present CMOS logic gates after the scaling-down limit comes within the next two decades. According to the International Semiconductor Technology Roadmap published in 2007 (ITRS 2007), nanowire FETs are the most active ones, including Si FinFET, InAs and InSb nanowire FET, and carbon-nanotube (CNT) FET. It is also pointed out that a collaboration between device, circuit, and process researchers is essential even at the beginning of development, since such devices are used as a part of a large-scale integrated circuit that also includes the mainstream CMOS.