Nanowire/CMOS Heterogeneous Integration for Next-Generation Communication Systems

下一代通信系统的纳米线/CMOS 异构集成

• 批准号: 95174518
• 负责人: Dr.-Ing. Werner Prost
• 金额: --
• 依托单位: Lehrstuhl für Bauelemente der Höchstfrequenzelektronik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2008
• 资助国家: 德国
• 起止时间: 2007-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/95174518?language=en
• 关键词: Nanowire; CMOS; Heterogeneous; Integration; Next

Nanowire devices have drawn increasing attention recently as one of the most promising candidates for logic switches that will take over present CMOS logic gates after the scaling-down limit comes within the next two decades. According to the International Semiconductor Technology Roadmap published in 2007 (ITRS 2007), nanowire FETs are the most active ones, including Si FinFET, InAs and InSb nanowire FET, and carbon-nanotube (CNT) FET. It is also pointed out that a collaboration between device, circuit, and process researchers is essential even at the beginning of development, since such devices are used as a part of a large-scale integrated circuit that also includes the mainstream CMOS.

纳米线器件最近引起了越来越多的关注，作为逻辑开关的最有前途的候选人之一，将接管目前的CMOS逻辑门后，缩小限制在未来二十年内到来。根据2007年发布的国际半导体技术路线图（ITRS 2007），纳米线FET是最活跃的FET，包括Si FinFET、InAs和InSb纳米线FET以及碳纳米管（CNT）FET。它还指出，器件，电路和工艺研究人员之间的合作是必不可少的，即使在开发的开始，因为这样的设备是作为一个大规模集成电路的一部分，也包括主流的CMOS使用。

项目成果

InAs Nanowire Circuits Fabricated by Field-Assisted Self-Assembly on a Host Substrate

在主基板上通过场辅助自组装制造 InAs 纳米线电路

• DOI: 10.1587/transele.e95.c.1369
• 发表时间: 2012
• 期刊: IEICE Trans. Electron.
• 作者: K Blekker;R. Richter;R. Oda;S. Taniyama;O. Benner;G. Keller;B Münstermann;A. Lysov;I. Regolin. T. Waho;W Prost
• 通讯作者: W Prost

Comparison of InAs nanowire conductivity: influence of growth method and structure

InAs纳米线电导率比较：生长方法和结构的影响

• DOI: 10.1002/pssc.201100282
• 期刊: Physica Status Solidi (c)
• 作者: K. Sladek;A. Winden;S. Wirths;K. Weis;C. Blömers;Ö. Gül;T. Grap;S. Lenk;M. von der Ahe;T. E. Weirich;H. Hardtdegen;M. I. Lepsa;A. Lysov;Z.‐A. Li;W. Prost;F.‐J. Tegude;H. Lüth;T. Schäpers;D. Grützmacher
• 通讯作者: D. Grützmacher