Nanowire/CMOS Heterogeneous Integration for Next-Generation Communication Systems

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Nanowire devices have drawn increasing attention recently as one of the most promising candidates for logic switches that will take over present CMOS logic gates after the scaling-down limit comes within the next two decades. According to the International Semiconductor Technology Roadmap published in 2007 (ITRS 2007), nanowire FETs are the most active ones, including Si FinFET, InAs and InSb nanowire FET, and carbon-nanotube (CNT) FET. It is also pointed out that a collaboration between device, circuit, and process researchers is essential even at the beginning of development, since such devices are used as a part of a large-scale integrated circuit that also includes the mainstream CMOS.