Electric characterization of memristive devices in basal learning circuits

基础学习电路中忆阻器件的电气特性

• 批准号: 261986709
• 负责人: Professor Dr. Hermann Kohlstedt
• 金额: --
• 依托单位: Arbeitsgruppe Nanoelektronik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/261986709?language=en
• 关键词: Electric; characterization; memristive; devices; basal

This project part will focus on the electronic characterisation of memristive devices and their implementation in neuromorphic circuits. Our goal is to achieve the relevant device parameters for successful applications of those devices in neuromorphic circuits. The electronic characterisation may support a successful fabrication of memristive devices in the projects of parts A1 and A2. In particular, we like to achieve a broad statistic of the relevant device in order to enable a profound modelling of several device behaviours and ensure there with the design of complex neuronal circuits. Furthermore, we like to transfer the neurobiological models from project part C1 into electronic circuits, which may be consider as basic building blocks for the design of complex neuronal networks in project part C2. Therefore, the goal is to use the reductionist strategy from Kandel in order to enable the emulation of learning and memory already on the synaptic level.

本计画部分将著重于记忆装置的电子特性及其在神经形态电路中的实现。我们的目标是实现这些设备在神经形态电路中成功应用的相关设备参数。电子表征可能支持在零件A1和A2项目中成功制造记忆器件。特别是，我们希望实现相关设备的广泛统计，以便能够对几个设备行为进行深刻的建模，并确保设计复杂的神经元电路。此外，我们希望将项目C1部分的神经生物学模型转移到电子电路中，这可能被视为项目C2部分复杂神经元网络设计的基本构建块。因此，我们的目标是使用坎德尔的还原论策略，以便在突触水平上模拟已经存在的学习和记忆。