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Electric characterization of memristive devices in basal learning circuits

Electric characterization of memristive devices in basal learning circuits
基础学习电路中忆阻器件的电气特性
批准号:
261986709
负责人:
Professor Dr. Hermann Kohlstedt
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Units
财政年份:
2014
资助国家:
德国
项目状态:
已结题
起止时间:
2013-12-31 至 2017-12-31

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中文摘要
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英文摘要
This project part will focus on the electronic characterisation of memristive devices and their implementation in neuromorphic circuits. Our goal is to achieve the relevant device parameters for successful applications of those devices in neuromorphic circuits. The electronic characterisation may support a successful fabrication of memristive devices in the projects of parts A1 and A2. In particular, we like to achieve a broad statistic of the relevant device in order to enable a profound modelling of several device behaviours and ensure there with the design of complex neuronal circuits. Furthermore, we like to transfer the neurobiological models from project part C1 into electronic circuits, which may be consider as basic building blocks for the design of complex neuronal networks in project part C2. Therefore, the goal is to use the reductionist strategy from Kandel in order to enable the emulation of learning and memory already on the synaptic level.
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Synchronization in memristively pulse-coupled oscillator networks – experiments
  • 批准号:
    392855750
  • 项目类别:
    Research Units
  • 资助金额:
    $0.0万
  • 财政年份:
    2017
  • 负责人:
    Professor Dr. Hermann Kohlstedt
  • 依托单位:
Memristive tunnel junctions and CMOS integration
  • 批准号:
    261986629
  • 项目类别:
    Research Units
  • 资助金额:
    $0.0万
  • 财政年份:
    2014
  • 负责人:
    Professor Dr. Hermann Kohlstedt
  • 依托单位:
Coordination Funds
  • 批准号:
    261986907
  • 项目类别:
    Research Units
  • 资助金额:
    $0.0万
  • 财政年份:
    2014
  • 负责人:
    Professor Dr. Hermann Kohlstedt
  • 依托单位:
Materials World Network: Transport, Switching and Size Effects in the lead-free ferroelectric, BiFeO3
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