Electric characterization of memristive devices in basal learning circuits

该项目部分将重点关注忆阻器件的电子特征及其在神经形态电路中的实现。我们的目标是实现这些设备在神经形态电路的成功应用的相关设备参数。电子特性可以支持部分A1和A2的项目中的忆阻器件的成功制造。特别是，我们希望实现相关设备的广泛统计，以便能够对几种设备行为进行深刻的建模，并确保复杂神经元电路的设计。此外，我们希望将项目部分C1的神经生物学模型转换为电子电路，这可以被认为是项目部分C2中复杂神经网络设计的基本构建块。因此，我们的目标是使用坎德尔的简化策略，以便在突触水平上模拟学习和记忆。

This project part will focus on the electronic characterisation of memristive devices and their implementation in neuromorphic circuits. Our goal is to achieve the relevant device parameters for successful applications of those devices in neuromorphic circuits. The electronic characterisation may support a successful fabrication of memristive devices in the projects of parts A1 and A2. In particular, we like to achieve a broad statistic of the relevant device in order to enable a profound modelling of several device behaviours and ensure there with the design of complex neuronal circuits. Furthermore, we like to transfer the neurobiological models from project part C1 into electronic circuits, which may be consider as basic building blocks for the design of complex neuronal networks in project part C2. Therefore, the goal is to use the reductionist strategy from Kandel in order to enable the emulation of learning and memory already on the synaptic level.