Memristive tunnel junctions and CMOS integration
Memristive tunnel junctions and CMOS integration
批准号:
261986629
负责人:
Professor Dr. Hermann Kohlstedt
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Units
财政年份:
2014
资助国家:
德国
项目状态:
已结题
起止时间:
2013-12-31 至 2020-12-31
中文摘要
在过去的几年里,基于忆阻器件的计算概念被提出。然而,他们的硬件实现受到缺乏可靠的设备和在微观尺度上对所涉及的开关机制的透彻理解的限制。这个子项目的主要目标是缩小有前途的计算概念和硬件实现之间的差距。开发用于神经形态电路的cmos兼容器件。我们调查的重点是基于接口的忆阻装置。电阻开关机制是由肖特基类接触的变化与电子隧穿概率的变化共同引起的。这种所谓的双势垒记忆装置,是在这个项目的第一个创始时期开发的。在当前的资助期内,将进一步探索导致这些器件基于模拟接口的电阻开关的潜在化学和物理效应,并将其转移到CMOS兼容材料(特别是HfOx作为忆阻层)。特别是,打算将双势垒记忆器件转移到IHP的BiCMOS试验线上。在器件层面,将研究硅技术的产量、可变性、可预测性、能源效率以及材料和工艺兼容性。此外,我们将建立小型测试电路,允许在网络环境中调查实现设备的行为。这些电路应进一步促进研究单位C次级项目内集成电路的发展。
英文摘要
In the last couple of years promising computing concepts based-on memristive devices have been presented. Nevertheless, their hardware realization is limited by a lack of reliable devices and a thorough understanding of the involved switching mechanisms on a microscopic scale. The main goal of this subproject is to close the gap between promising computing concepts and the hardware realization. CMOS-compatible devices for neuromorphic circuits will be developed. In the focus of our investigation are interface-based memristive devices. The resistance switching mechanism results from changes at a Schottky-like contact in conjunction with a varying electron tunnelling probability. This so called double barrier memristive device, has been developed in the first founding period of this project. In the current funding period the underlying chemical and physical effect, which leads to the analogue interface-based resistance switching of those devices, will be further explored and transferred to CMOS compatible materials (in particular HfOx as memristive layer). In particular, it is intend to transfer double barrier memristive devices into the BiCMOS pilot line of the IHP. At the device level, the yield, variability, predictability, energy efficiency, and the material and process compatibility to the Silicon technology will be studied. Further we will to set-up small test circuits, which allows to investigate the behaviour of the realized devices within a network environment. Those circuits should furthermore facilitate the development of integrated circuits within the C subprojects of the research unit.
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会议论文
Synchronization in memristively pulse-coupled oscillator networks – experiments
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批准号:392855750
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项目类别:Research Units
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资助金额:$0.0万
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财政年份:2017
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负责人:Professor Dr. Hermann Kohlstedt
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依托单位:
Electric characterization of memristive devices in basal learning circuits
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批准号:261986709
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项目类别:Research Units
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资助金额:$0.0万
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财政年份:2014
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负责人:Professor Dr. Hermann Kohlstedt
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依托单位:
Coordination Funds
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批准号:261986907
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项目类别:Research Units
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资助金额:$0.0万
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财政年份:2014
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负责人:Professor Dr. Hermann Kohlstedt
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依托单位:
Materials World Network: Transport, Switching and Size Effects in the lead-free ferroelectric, BiFeO3
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批准号:24716349
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2006
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负责人:Professor Dr. Hermann Kohlstedt
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依托单位:
Synchrotronstrahlungs-Experimente zu Skalierungseffekten und ungewöhnlichen Phasen epitaktischer perowskitischer Schichten
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批准号:5443244
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2004
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负责人:Professor Dr. Hermann Kohlstedt
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依托单位:
Displacive and Conductive Phenomenas in Ferroelectric Thin Films - Scaling effects and switching properties
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批准号:5411225
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2003
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负责人:Professor Dr. Hermann Kohlstedt
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依托单位:
国内基金
海外基金
磁性隧道结的势垒及电极无序效应的研究
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批准号:10874076
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项目类别:面上项目
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资助金额:34.0万元
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批准年份:2008
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负责人:胡安
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依托单位:
磁隧道结偏压性质及反常隧道磁电阻的研究
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批准号:10474038
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项目类别:面上项目
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资助金额:32.0万元
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批准年份:2004
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负责人:胡安
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依托单位: