Memristive tunnel junctions and CMOS integration

在过去的几年里，基于记忆器件的有前途的计算概念已经被提出。然而，由于缺乏可靠的设备和对微观尺度上涉及的开关机制的透彻了解，它们的硬件实现受到限制。这个子项目的主要目标是缩小有希望的计算概念和硬件实现之间的差距。将开发用于神经形态电路的与CMOS兼容的器件。我们研究的重点是基于接口的记忆装置。电阻转换机制是由类肖特基接触处的变化以及变化的电子隧穿概率引起的。这种所谓的双势垒记忆器件，是在该项目的第一个创始阶段就开发出来的。在目前的资助期内，将进一步探索导致这些器件基于模拟接口的电阻开关的潜在化学和物理效应，并将其转移到与CMOS兼容的材料(特别是作为记忆层的HfOx)。特别是，它打算将双势垒记忆器件转移到国际水文计划的BiCMOS试验线中。在器件层面，将研究硅技术的成品率、可变性、可预测性、能源效率以及材料和工艺兼容性。此外，我们将设置小型测试电路，允许调查网络环境中实现的设备的行为。这些电路还应促进研究单位C级分项目内集成电路的发展。

In the last couple of years promising computing concepts based-on memristive devices have been presented. Nevertheless, their hardware realization is limited by a lack of reliable devices and a thorough understanding of the involved switching mechanisms on a microscopic scale. The main goal of this subproject is to close the gap between promising computing concepts and the hardware realization. CMOS-compatible devices for neuromorphic circuits will be developed. In the focus of our investigation are interface-based memristive devices. The resistance switching mechanism results from changes at a Schottky-like contact in conjunction with a varying electron tunnelling probability. This so called double barrier memristive device, has been developed in the first founding period of this project. In the current funding period the underlying chemical and physical effect, which leads to the analogue interface-based resistance switching of those devices, will be further explored and transferred to CMOS compatible materials (in particular HfOx as memristive layer). In particular, it is intend to transfer double barrier memristive devices into the BiCMOS pilot line of the IHP. At the device level, the yield, variability, predictability, energy efficiency, and the material and process compatibility to the Silicon technology will be studied. Further we will to set-up small test circuits, which allows to investigate the behaviour of the realized devices within a network environment. Those circuits should furthermore facilitate the development of integrated circuits within the C subprojects of the research unit.