Materials World Network: Transport, Switching and Size Effects in the lead-free ferroelectric, BiFeO3

材料世界网络:无铅铁电体 BiFeO3 中的输运、转换和尺寸效应

基本信息

项目摘要

This proposal focuses on the novel thin film multiferroic material BiFeOs which simultaneously exhibits anti-ferromagnetic as well ferroelectric properties. Due to the fact that the ferroelectric properties are pronounced in form of a high remnant polarization and high Curie temperature, we concentrate in this proposal exclusively on the ferroelectric part. The high remnant polarization in the order of 90u.C/cm? together with the absent of lead makes this material very attractive for applications in ferroelectric non-volatile memories are mechanical-electrical micro/nano systems. Many open questions still remain before BiFeOs will find its way into various products. This proposal concentrates on the most important issues, including the scaling of BiFeOs into ultrathin films and nano-sized lateral structures. Doping is considered as a way to reduce the relative high coercive filed of BiFeOs and lowers the leakage current. Novel experiments in a close collaboration with the Advanced Light Source at the Berkeley Lab will be performed in which the atomic structure as well as the electrical characteristic is investigated at the same time. The expertise and joint efforts from Berkeley, Aachen and Jülich will lead to the same success achieved in out first NSF-DFG project.
该提案的重点是新的薄膜多铁性材料BiFeOs,同时表现出反铁磁以及铁电性能。由于铁电性质以高剩余极化和高居里温度的形式突出,我们在此建议中专门集中在铁电部分。在90 μ C/cm?加上不含铅,使得这种材料对于铁电非易失性存储器中的应用非常有吸引力,所述铁电非易失性存储器是机电微/纳系统。在BiFeOs进入各种产品之前,仍然存在许多悬而未决的问题。这项建议集中在最重要的问题,包括缩放的BiFeOs到纳米薄膜和纳米尺寸的横向结构。掺杂被认为是一种降低BiFeO的相对高的矫顽场并降低漏电流的方法。与伯克利实验室的先进光源密切合作的新实验将同时进行原子结构和电气特性的研究。伯克利,亚琛和尤利希的专业知识和共同努力将导致我们的第一个NSF-DFG项目取得同样的成功。

项目成果

期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions.
  • DOI:
    10.1103/physrevlett.98.257603
  • 发表时间:
    2006-03
  • 期刊:
  • 影响因子:
    8.6
  • 作者:
    N. Pertsev;H. Kohlstedt
  • 通讯作者:
    N. Pertsev;H. Kohlstedt
Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates
  • DOI:
    10.1088/0957-4484/21/47/475202
  • 发表时间:
    2010-11-26
  • 期刊:
  • 影响因子:
    3.5
  • 作者:
    Pertsev, N. A.;Kohlstedt, H.
  • 通讯作者:
    Kohlstedt, H.
Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures
  • DOI:
    10.1007/s10853-009-3548-y
  • 发表时间:
    2009-05
  • 期刊:
  • 影响因子:
    4.5
  • 作者:
    M. Arredondo;Martin Saunders;A. Petraru;Hermann Kohlstedt;I. Vrejoiu;M. Alexe;Dietrich Hesse;Nigel D. Browning;Nigel D. Browning;Paul G Munroe;Valanoor Nagarajan
  • 通讯作者:
    M. Arredondo;Martin Saunders;A. Petraru;Hermann Kohlstedt;I. Vrejoiu;M. Alexe;Dietrich Hesse;Nigel D. Browning;Nigel D. Browning;Paul G Munroe;Valanoor Nagarajan
Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures
  • DOI:
    10.1002/adfm.201000265
  • 发表时间:
    2010-08-09
  • 期刊:
  • 影响因子:
    19
  • 作者:
    Hambe, Michael;Petraru, Adrian;Kohlstedt, Hermann
  • 通讯作者:
    Kohlstedt, Hermann
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Professor Dr. Hermann Kohlstedt其他文献

Professor Dr. Hermann Kohlstedt的其他文献

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{{ truncateString('Professor Dr. Hermann Kohlstedt', 18)}}的其他基金

Synchronization in memristively pulse-coupled oscillator networks – experiments
忆阻脉冲耦合振荡器网络中的同步 â 实验
  • 批准号:
    392855750
  • 财政年份:
    2017
  • 资助金额:
    --
  • 项目类别:
    Research Units
Electric characterization of memristive devices in basal learning circuits
基础学习电路中忆阻器件的电气特性
  • 批准号:
    261986709
  • 财政年份:
    2014
  • 资助金额:
    --
  • 项目类别:
    Research Units
Memristive tunnel junctions and CMOS integration
忆阻隧道结和 CMOS 集成
  • 批准号:
    261986629
  • 财政年份:
    2014
  • 资助金额:
    --
  • 项目类别:
    Research Units
Coordination Funds
协调基金
  • 批准号:
    261986907
  • 财政年份:
    2014
  • 资助金额:
    --
  • 项目类别:
    Research Units
Synchrotronstrahlungs-Experimente zu Skalierungseffekten und ungewöhnlichen Phasen epitaktischer perowskitischer Schichten
外延钙钛矿层尺度效应和异常相的同步辐射实验
  • 批准号:
    5443244
  • 财政年份:
    2004
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Displacive and Conductive Phenomenas in Ferroelectric Thin Films - Scaling effects and switching properties
铁电薄膜中的位移和导电现象 - 缩放效应和开关特性
  • 批准号:
    5411225
  • 财政年份:
    2003
  • 资助金额:
    --
  • 项目类别:
    Research Grants

相似国自然基金

国际心脏研究会第二十三届世界大会(XXIII World Congress ISHR)
  • 批准号:
    81942001
  • 批准年份:
    2019
  • 资助金额:
    10 万元
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相似海外基金

Materials World Network: Collaborative Proposal: Understanding the Optical Response of Designer Epsilon Near Zero Materials
材料世界网络:协作提案:了解设计师 Epsilon 近零材料的光学响应
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Materials World Network: Investigations of Quantum Fluctuation Relations Using Superconducting Qubits
材料世界网络:利用超导量子位研究量子涨落关系
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材料世界网络,SusChEM:反应性纳米层压材料中界面化学的控制(CIREN)
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Materials World Network: Particle-Mediated Control Over Crystallization: From the Pre-Nucleation Stage to the Final Crystal
材料世界网络:粒子介导的结晶控制:从预成核阶段到最终晶体
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材料世界网络:具有垂直各向异性的复杂磁结构的新功能
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材料世界网:噼啪声
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材料世界网络:开发高效光伏器件,在广泛的光谱照明条件下实现最佳性能
  • 批准号:
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