Materials World Network: Transport, Switching and Size Effects in the lead-free ferroelectric, BiFeO3

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This proposal focuses on the novel thin film multiferroic material BiFeOs which simultaneously exhibits anti-ferromagnetic as well ferroelectric properties. Due to the fact that the ferroelectric properties are pronounced in form of a high remnant polarization and high Curie temperature, we concentrate in this proposal exclusively on the ferroelectric part. The high remnant polarization in the order of 90u.C/cm? together with the absent of lead makes this material very attractive for applications in ferroelectric non-volatile memories are mechanical-electrical micro/nano systems. Many open questions still remain before BiFeOs will find its way into various products. This proposal concentrates on the most important issues, including the scaling of BiFeOs into ultrathin films and nano-sized lateral structures. Doping is considered as a way to reduce the relative high coercive filed of BiFeOs and lowers the leakage current. Novel experiments in a close collaboration with the Advanced Light Source at the Berkeley Lab will be performed in which the atomic structure as well as the electrical characteristic is investigated at the same time. The expertise and joint efforts from Berkeley, Aachen and Jülich will lead to the same success achieved in out first NSF-DFG project.