Materials World Network: Transport, Switching and Size Effects in the lead-free ferroelectric, BiFeO3

本方案的研究重点是同时具有反铁磁和铁电性能的新型薄膜多铁性材料BiFeO。由于铁电性质的显著形式是高剩余极化和高居里温度，我们在这个建议中只集中在铁电部分。剩余极化强度高达90uC/cm？再加上铅的缺乏，使得这种材料在铁电非易失性存储器中的应用非常吸引人，因为它是机电微/纳米系统。在BiFeo找到进入各种产品的途径之前，仍有许多悬而未决的问题。这项提议集中在最重要的问题上，包括BiFeO成超薄膜和纳米横向结构的比例。掺杂被认为是降低BiFeO相对较高的矫顽场和降低漏电流的一种方法。将与伯克利实验室的高级光源密切合作进行新颖的实验，同时研究原子结构和电学特性。伯克利、Aachen和Jülich的专业知识和共同努力将在我们的第一个NSF-DFG项目中取得同样的成功。

This proposal focuses on the novel thin film multiferroic material BiFeOs which simultaneously exhibits anti-ferromagnetic as well ferroelectric properties. Due to the fact that the ferroelectric properties are pronounced in form of a high remnant polarization and high Curie temperature, we concentrate in this proposal exclusively on the ferroelectric part. The high remnant polarization in the order of 90u.C/cm? together with the absent of lead makes this material very attractive for applications in ferroelectric non-volatile memories are mechanical-electrical micro/nano systems. Many open questions still remain before BiFeOs will find its way into various products. This proposal concentrates on the most important issues, including the scaling of BiFeOs into ultrathin films and nano-sized lateral structures. Doping is considered as a way to reduce the relative high coercive filed of BiFeOs and lowers the leakage current. Novel experiments in a close collaboration with the Advanced Light Source at the Berkeley Lab will be performed in which the atomic structure as well as the electrical characteristic is investigated at the same time. The expertise and joint efforts from Berkeley, Aachen and Jülich will lead to the same success achieved in out first NSF-DFG project.