Mode-locked semiconductor disk laser for ultra-short pulses in the red and ultraviolet spectral range

可见光波段的半导体锁模激光器具有广泛的应用前景，如双光子吸收聚合、多声子聚合、荧光寿命显微镜聚合、药物光动力学治疗等。在本项目中，我们将研制一种在红光范围内具有超短脉冲长度和恒定高输出功率的紧凑型脉冲激光光源，并对其进行表征。因此，这一研究方案的主要目标是缩短脉冲长度，实现长期稳定的操作，以及开发新的波长范围(610至660 nm，分别为330 nm)。具体目标是：-使用腔内倍频在紫外光中实现660 nm的超短(飞秒)脉冲-330 nm波长的飞秒脉冲-不同半导体吸收体结构的比较研究，重点是超短脉冲的产生-从660 nm到610 nm的波长的系统变化，以及这些变化对激光性能(例如，光输出功率，脉冲长度，长期稳定性，等等)基于项目期间的开发和研究，我们的最终目标是将吸收镜与增益结构相结合，创造出最紧凑的半导体锁模激光器。首先将进行模拟、实现和表征。

Semiconductor based mode-locked laser in the visible red spectral range offer a variety of potential applications, e.g. the polymerization via two-photon-absorption, multi-phonon or fluorescence lifetime microscopy or in the medicine photodynamic therapy. In this project, a compact pulsed laser source with ultra-short pulse length and constant high output power in the red spectral range will be developed and characterized. The main goals of this research proposal are therefore the reduction of the pulse length, the achievement of long-term stability of the operation, as well as the development of new wavelength range (610 to 660 nm, respectively 330 nm). The goals are in detail: - Realization of ultra-short (femtosecond) pulses at 660 nm- Femtosecond pulses in the UV at 330 nm wavelength using intra-cavity frequency doubling- Comparative studies of different semiconductor absorber structures with the focus on the generation of ultra-short pulses- Systematic variation of the wavelength from 660 nm to 610 nm and the study of these changes on the laser performance (e.g. optical output power, pulse length, long-term stability, and so on)Based on the developments and studies during the project period our ultimate goal is the integration of the absorber mirror with the gain structure to create the most compact semiconductor mode-locked laser. First simulations, realizations and characterizations will be perfomed.