Mode-locked semiconductor disk laser for ultra-short pulses in the red and ultraviolet spectral range

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Semiconductor based mode-locked laser in the visible red spectral range offer a variety of potential applications, e.g. the polymerization via two-photon-absorption, multi-phonon or fluorescence lifetime microscopy or in the medicine photodynamic therapy. In this project, a compact pulsed laser source with ultra-short pulse length and constant high output power in the red spectral range will be developed and characterized. The main goals of this research proposal are therefore the reduction of the pulse length, the achievement of long-term stability of the operation, as well as the development of new wavelength range (610 to 660 nm, respectively 330 nm). The goals are in detail: - Realization of ultra-short (femtosecond) pulses at 660 nm- Femtosecond pulses in the UV at 330 nm wavelength using intra-cavity frequency doubling- Comparative studies of different semiconductor absorber structures with the focus on the generation of ultra-short pulses- Systematic variation of the wavelength from 660 nm to 610 nm and the study of these changes on the laser performance (e.g. optical output power, pulse length, long-term stability, and so on)Based on the developments and studies during the project period our ultimate goal is the integration of the absorber mirror with the gain structure to create the most compact semiconductor mode-locked laser. First simulations, realizations and characterizations will be perfomed.