High-frequency modeling and characterization of printed organic crystalline transistors

印刷有机晶体晶体管的高频建模和表征

• 批准号: 273176511
• 负责人: Professor Dr. Stefan Mannsfeld
• 金额: --
• 依托单位: Institut für Halbleiter- und Mikrosystemtechnik (IHM)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/273176511?language=en
• 关键词: frequency; modeling; characterization; printed; organic

From an application point of view, organic devices are often considered too slow for wireless applications due to their low mobilities and related low transit frequencies. On the other hand, organic materials allow fabrication on flexible plastic substrates at moderate fabrication costs with a high throughput. Very recent advances in fabrication of single crystalline films have lead to very high mobilities which, for carefully designed transistor architectures, will push the transit frequencies to values which meet the requirements of wireless applications. In addition, by exploiting the non-quasi-static operation regime of the transistors, circuits operating at tens, hundreds of MHz or even GHz become feasible. With the progress in organic electronics made over the last years, the demand for adequate modeling support beyond the quasi-static approximation thus increases.This project aims to develop and provide device models for organic single crystalline thin films which enable device optimization and circuit design for high-frequency and non-quasi-static operation. A tight collaboration between model development and experimental studies ensures a careful model verification and calibration as well as experimental proof-of-concepts for high-frequency transistor and circuit operation.

从应用的角度来看，有机器件由于其低迁移率和相关的低渡越频率而通常被认为对于无线应用来说太慢。另一方面，有机材料允许以适度的制造成本在柔性塑料基板上制造，具有高产量。单晶膜制造的最新进展已经导致非常高的迁移率，对于精心设计的晶体管结构，这将推动渡越频率达到满足无线应用要求的值。此外，通过利用晶体管的非准静态操作机制，在数十、数百MHz或甚至GHz下操作的电路变得可行。近年来，随着有机电子学的发展，在准静态近似的基础上，需要更多的模型支持。本项目旨在开发和提供有机单晶薄膜的器件模型，以实现高频和非准静态操作的器件优化和电路设计。模型开发和实验研究之间的紧密合作确保了仔细的模型验证和校准以及高频晶体管和电路操作的实验概念验证。