Record-High Organic Device Performance enabled by Polymorphism in Organic Semiconductors

有机半导体多态性实现创纪录的有机器件性能

• 批准号: 368686449
• 负责人: Professor Dr. Stefan Mannsfeld
• 金额: --
• 依托单位: Center for Advancing Electronics Dresden (cfaed)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/368686449?language=en
• 关键词: Record; Organic; Device; Performance; enabled

Recent developments in thin film processing methods for organic semiconductors have allowed the stabilization of non-equilibrium polymorphs with drastically better electrical device performance. These advances highlight the importance of controlling polymorphism to maximize the performance of a given material. However, so far there is no way to predict for which materials polymorphism can be expected and what electrical performance the different polymorphs can deliver. As a likely result, many materials, both existing and yet to be synthesized, have been or will be declared poorly performing in devices simply because they are not processed in a way that produces films of the (unknown) high-performance polymorph(s). In order to remedy this situation, we propose to develop a theoretical framework to predict polymorphism in small molecule organic semiconductors and to rank potential polymorphs based on their predicted electrical properties. In a complementary effort, we will employ a special printing method to detect and stabilize polymorphic forms of soluble organic materials in printed thin films, which will provide the very necessary experimental benchmarks and calibration references to the to-be-developed theory. Various experimental tools will be used to precisely determine the molecular packing in the printed films thus providing valuable feedback to theory.The theoretical approach will establish a direct link between molecular structure and electrical performance by considering many different polymorphs beyond the one in thermodynamic equilibrium that is usually encountered when employing conventional deposition techniques. The approach creates a whole set of possible structural realizations with expectedly higher carrier mobilities, possibly by orders of magnitude for some of the molecules. In the experimental part, we will test the predictions made by this new theory, especially those that it suggests to be of high technological relevance (high charge carrier mobility). We will use modern deposition techniques to introduce the variability in deposition conditions which is necessary to realize such polymorphs. Materials will be characterized and electronic devices will be analyzed and compared to theory.The proposed device-oriented simulation framework will be developed based on a restricted set of structures but is generally applicable and is a strategic tool that could spark a vast amount of novel high-mobility materials that would otherwise remain undiscovered. This could significantly transform the way of performing material analysis and design and should catalyze the research along the whole chain from synthesis to device measurements.

有机半导体薄膜加工方法的最新发展使得非平衡多晶型物的稳定化具有显著更好的电气器件性能。这些进展突出了控制多晶型以最大化给定材料的性能的重要性。然而，到目前为止，还没有办法预测哪些材料可以预期多晶型以及不同的多晶型可以提供什么样的电性能。因此，许多现有的和尚未合成的材料已经或将被宣布在器械中表现不佳，仅仅是因为它们没有以产生（未知）高性能多晶型物的薄膜的方式进行处理。为了补救这种情况，我们建议开发一个理论框架来预测小分子有机半导体中的多晶型，并根据其预测的电性能对潜在的多晶型进行排名。作为补充，我们将采用一种特殊的印刷方法来检测和稳定印刷薄膜中可溶性有机材料的多晶型，这将为待开发的理论提供非常必要的实验基准和校准参考。各种实验工具将被用来精确地确定在印刷薄膜的分子包装，从而提供有价值的反馈theoretic.The理论方法将建立一个直接的联系，分子结构和电气性能，通过考虑许多不同的多晶型超出了一个在热力学平衡，通常会遇到当采用传统的沉积技术。这种方法创造了一整套可能的结构实现，具有更高的载流子迁移率，可能是一些分子的数量级。在实验部分，我们将测试这个新理论所做的预测，特别是那些它认为具有高技术相关性（高载流子迁移率）的预测。我们将使用现代沉积技术来引入实现这种多晶型所必需的沉积条件的可变性。材料将被表征，电子器件将被分析并与理论进行比较。拟议的面向器件的模拟框架将基于一组有限的结构开发，但通常适用，并且是一种战略工具，可以激发大量的新型高迁移率材料，否则这些材料将无法被发现。这将极大地改变材料分析和设计的方式，并将推动从合成到器件测量的整个链条的研究沿着发展。