Solution-Processed, Air-stable, and High-Cutoff Frequency Organic Transistors for Wireless Communication Systems
Solution-Processed, Air-stable, and High-Cutoff Frequency Organic Transistors for Wireless Communication Systems
批准号:
273177482
负责人:
Professor Dr. Stefan Mannsfeld
金额:
$0.0万
依托单位国家:
德国
项目类别:
Priority Programmes
财政年份:
2015
资助国家:
德国
项目状态:
已结题
起止时间:
2014-12-31 至 2019-12-31
中文摘要
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英文摘要
Even though organic field effect transistors (OFETs) have now been researched for more than 20 years there are only very few reports of air-stable OFETs switching at frequencies exceeding 1MHz. On the other hand, there is a great demand for inexpensive analog, and flexible circuit applications such as high-frequency amplifiers or low-voltage low-noise receiver circuits working at tens of MHz or even close to GHz frequencies. In order to enable applications in which transistors work, for example, in amplifier circuits operating at common wireless frequencies within the Industrial, Scientific and Medical (ISM) radio bands (13.56MHz or 27.12MHz), the transit frequency of the individual OFET needs to be significantly improved and pushed into the range of 50-200MHz. The transit frequency is mainly limited by the transistor geometry/dimensions and the semiconductor material's intrinsic charge carrier mobility. So far, most of the recent reported improvements have focused on the transistor geometry and several promising concepts, especially layouts with vertical channels have been demonstrated. However, the potential to combine these existing device concepts with ultra-high mobility organic semiconductor materials has not been fully exploited yet. The main objective of this work is to develop a robust fabrication scheme that enables OFET on flexible substrates to work at switching speeds above 50MHz. We have recently been able to form ultra-high performance OFETs from solution-deposition methods that are compatible with flexible substrates. By careful control of the processing conditions we have obtained charge carrier mobilities as high as 11cm^2/Vs from printed highly crystalline films of the commercially available semiconductor TIPS-pentacene, and mobilities as high as 43cm^2/Vs for spin coated blended inks of the also commercially available C8-BTBT with the polymer polystyrene. The proposal objective will be achieved by combining these technological breakthroughs in obtaining very high electrical performance thin films with existing approaches to fabricate OFETs with short channel lengths. One great advantage of our approach is that it is compatible with one of the key ideas behind the vision of flexible, plastic wireless technologies: low cost! The result of this project will be a solution-deposition (printing!) method by which OFETs with transit frequencies above 50 MHz can be inexpensively fabricated on plastic substrates and from air-stable and commercially available semiconductor materials.
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Record-High Organic Device Performance enabled by Polymorphism in Organic Semiconductors
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批准号:368686449
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2017
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负责人:Professor Dr. Stefan Mannsfeld
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依托单位:
High-frequency modeling and characterization of printed organic crystalline transistors
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批准号:273176511
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项目类别:Priority Programmes
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资助金额:$0.0万
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财政年份:2015
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负责人:Professor Dr. Stefan Mannsfeld
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依托单位:
Herstellung ausgedehnter Felder von Transistoren auf Basis organischer Einkristalle
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批准号:5454758
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项目类别:Research Fellowships
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资助金额:$0.0万
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财政年份:2005
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负责人:Professor Dr. Stefan Mannsfeld
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依托单位:
Developing pinMOS towards dual channel electrical and optical memory
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批准号:515090030
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:--
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负责人:Professor Dr. Stefan Mannsfeld
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依托单位:
海外基金