Solution-Processed, Air-stable, and High-Cutoff Frequency Organic Transistors for Wireless Communication Systems

用于无线通信系统的溶液处理、空气稳定、高截止频率有机晶体管

• 批准号: 273177482
• 负责人: Professor Dr. Stefan Mannsfeld
• 金额: --
• 依托单位: Leibniz-Institut für Polymerforschung Dresden (IPF)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/273177482?language=en
• 关键词: Solution; Processed; Air; stable; Cutoff

Even though organic field effect transistors (OFETs) have now been researched for more than 20 years there are only very few reports of air-stable OFETs switching at frequencies exceeding 1MHz. On the other hand, there is a great demand for inexpensive analog, and flexible circuit applications such as high-frequency amplifiers or low-voltage low-noise receiver circuits working at tens of MHz or even close to GHz frequencies. In order to enable applications in which transistors work, for example, in amplifier circuits operating at common wireless frequencies within the Industrial, Scientific and Medical (ISM) radio bands (13.56MHz or 27.12MHz), the transit frequency of the individual OFET needs to be significantly improved and pushed into the range of 50-200MHz. The transit frequency is mainly limited by the transistor geometry/dimensions and the semiconductor material's intrinsic charge carrier mobility. So far, most of the recent reported improvements have focused on the transistor geometry and several promising concepts, especially layouts with vertical channels have been demonstrated. However, the potential to combine these existing device concepts with ultra-high mobility organic semiconductor materials has not been fully exploited yet. The main objective of this work is to develop a robust fabrication scheme that enables OFET on flexible substrates to work at switching speeds above 50MHz. We have recently been able to form ultra-high performance OFETs from solution-deposition methods that are compatible with flexible substrates. By careful control of the processing conditions we have obtained charge carrier mobilities as high as 11cm^2/Vs from printed highly crystalline films of the commercially available semiconductor TIPS-pentacene, and mobilities as high as 43cm^2/Vs for spin coated blended inks of the also commercially available C8-BTBT with the polymer polystyrene. The proposal objective will be achieved by combining these technological breakthroughs in obtaining very high electrical performance thin films with existing approaches to fabricate OFETs with short channel lengths. One great advantage of our approach is that it is compatible with one of the key ideas behind the vision of flexible, plastic wireless technologies: low cost! The result of this project will be a solution-deposition (printing!) method by which OFETs with transit frequencies above 50 MHz can be inexpensively fabricated on plastic substrates and from air-stable and commercially available semiconductor materials.

尽管有机场效应晶体管（OFFEs）的研究已经超过20年，但只有很少的报告表明空气稳定的OFFEs在超过1 MHz的频率下开关。另一方面，对于廉价的模拟和灵活的电路应用，例如工作在几十MHz甚至接近GHz频率的高频放大器或低压低噪声接收器电路，存在很大的需求。为了实现晶体管工作的应用，例如，在工业、科学和医疗（ISM）无线电频带（13.56MHz或27.12MHz）内的常见无线频率下操作的放大器电路中，需要显著提高单个OFET的渡越频率并将其推到50- 200 MHz的范围内。渡越频率主要受晶体管几何形状/尺寸和半导体材料的本征电荷载流子迁移率限制。到目前为止，大多数最近报道的改进都集中在晶体管的几何形状和几个有前途的概念，特别是与垂直沟道布局已经证明。然而，联合收割机将这些现有器件概念与超高迁移率有机半导体材料相结合的潜力尚未得到充分开发。这项工作的主要目标是开发一个强大的制造方案，使柔性衬底上的OFET工作在50 MHz以上的开关速度。我们最近已经能够形成超高性能的OFFEX从溶液沉积方法，与柔性基板兼容。通过仔细控制工艺条件，我们从市售半导体TIPS-并五苯的印刷高结晶膜中获得了高达11 cm ^2/Vs的电荷载流子迁移率，并且从市售C8-BTBT与聚合物聚苯乙烯的旋涂混合油墨中获得了高达43 cm ^2/Vs的迁移率。该提案的目标将通过将这些技术突破与现有的方法相结合来实现，以获得非常高的电性能薄膜，以制造具有短沟道长度的OFFEs。我们的方法的一个巨大优势是，它与灵活的塑料无线技术愿景背后的关键理念之一兼容：低成本！这个项目的结果将是一个解决方案沉积（印刷！）本发明涉及一种方法，通过该方法，可以在塑料衬底上并且从空气稳定的和商业上可获得的半导体材料廉价地制造具有50 MHz以上的渡越频率的OFFEs。