Resistive switching mechanism in Mott oxide insulators (B10)

项目B10探索了使用Cr掺杂V2 O3 Mott材料的器件中发生的不同电阻开关机制，这些机制是材料结构、氧化学计量和Cr掺杂水平以及所用电极的函数。特别是，它的目的是调查，如果电子相关效应（即一个真正的“莫特”转变）可能是参与的挥发性和/或非挥发性电阻开关中观察到的对称电极的设备的机制。因此，温度和可能的压力相关的开关实验计划，以及详细的表征TEM和ATP。

Project B10 explores the different resistive switching mechanisms that occur in devices using Cr-doped V2O3 Mott material, as function of material structure, oxygen stoichiometry and Cr-doping level, and elec-trodes used. In particular, it aims to investigate if electron correlation effects (i.e. a true “Mott” transition) could be the mechanism involved in the volatile and/or non-volatile resistive switching observed in devices with symmetric electrodes. Thus, temperature and possibly pressure-dependent switching experiments are planned as well as detailed characterization by TEM and ATP.