权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Fabrication, characterization and application of GeSn core-shell nanowires

GeSn核壳纳米线的制备、表征及应用

基本信息

批准号：
21J11537
负责人：
孫永烈
金额：
$ 0.96万
依托单位：
National Institute for Materials Science (2022)University of Tsukuba (2021)
依托单位国家：
日本
项目类别：
Grant-in-Aid for JSPS Fellows
财政年份：
2021
资助国家：
日本
起止时间：
2021-04-28 至 2023-03-31
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21J11537/
关键词：
Semiconductor Nanowire Hole gas Core-shell Germanium nanowire core-shell germanium nanoimprint lithography

项目摘要

To fabricate vertical GeSn core-shell nanowire (NW) MOSFETs, i-Ge NWs and their core-shell heterostructures formed on heavily doped p-Si substrates using electron beam lithography (EBL) and the top-down etching (Bosch process) was investigated. The i-Ge layer deposition by chemical vapor deposition (CVD) was first investigated for optimizing thickness and crystallinity. Sets of single Ge NWs (for device fabrication) and Ge NW arrays (for characterization) with diameters ranging from 150 to 50 nm were fabricated using EBL and Bosch etching. Surface morphology, NW size, etching depth relative to pattern size, and etching conditions were investigated to obtain desirable structures. As a result of optimization, Ge NW arrays with smooth surfaces and uniform diameters in the length direction were successfully fabricated on Si substrates.The core-shell heterostructure was then formed by CVD and the shell thickness, boron doping, and crystallinity were optimized. Raman scattering was used to evaluate the hole gas accumulation in the core relative to NW size. In addition, the core-shell interface, shell crystallinity, and elemental distribution were studied by transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis. The results demonstrated a core-shell NW structure with sharp interfaces. Finally, the fabricated samples were sent to a collaborative research group for fabricating vertical core-shell NW MOSFETs. Some of the above results were presented at the conference, and we plan to compile the full results and publish them in a paper.

为了制备垂直的GeSn型核壳纳米线(NW)MOSFET，采用电子束曝光法(EBL)和自上而下的腐蚀(Bosch)工艺，研究了重掺杂p-Si衬底上形成的I-Ge纳米线及其核壳异质结构。为了优化薄膜的厚度和结晶度，首次研究了化学气相沉积(CVD)沉积I-Ge层的方法。利用EBL和Bosch刻蚀技术制备了直径从150 nm到50 nm的单个Ge NW(用于器件制造)和Ge NW阵列(用于表征)。研究了表面形貌、NW尺寸、刻蚀深度与图案尺寸的关系以及刻蚀条件，以获得所需的结构。通过优化，成功地在硅衬底上制备出表面光滑、长径均匀的Ge NW阵列，然后用CVD方法形成了核-壳异质结构，并对壳层厚度、硼掺杂和结晶度进行了优化。用拉曼散射方法评价了岩心中孔道气体的聚集程度与北西向尺寸的关系。此外，还用透射电子显微镜和能谱分析研究了核壳界面、壳层结晶度和元素分布。结果表明，该材料为具有尖锐界面的核壳结构。最后，制作的样品被送到一个合作研究小组，用于制造垂直核壳结构的NW MOSFET。上述部分成果已在会议上公布，我们计划将全部成果汇编成一篇论文发表。