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Perpendicular magnetic anisotropy in garnet-type ferromagnetic insulators used for inducing T-symmetry break in topological insulators

Perpendicular magnetic anisotropy in garnet-type ferromagnetic insulators used for inducing T-symmetry break in topological insulators
用于诱导拓扑绝缘体 T 对称破缺的石榴石型铁磁绝缘体中的垂直磁各向异性
批准号:
310372030
负责人:
Dr. Andy Quindeau
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Fellowships
财政年份:
2016
资助国家:
德国
项目状态:
已结题
起止时间:
2015-12-31 至 2016-12-31

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中文摘要
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英文摘要
I want to experimentally explore the physical properties and limitations of garnet thin films. Characteristics like magnetic coercivity, anisotropy and remanent magnetization will be quantified and discussed. I plan to conclude how these properties relate to the thin film growth conditions, stoichiometry, film thickness and crystal structure. Furthermore, I want to experimentally demonstrate proximity-induced magnetism with out-of-plane orientation in topological insulators.The primary objective of this project is to reproducibly create and controll the ferromagnetic garnet thin film Tm3Fe5O12 (TmIG) via pulsed laser deposition (PLD) with controllable perpendicular magnetic anisotropy (PMA) in respect to its coercivity and magnetization. Systematic trends of measured magnetic properties will be correlated to the stoichiometric and crystallographic properties. The secondary objective would include a broader study of different types of rare-earth garnets. Potential substituent materials are cerium, with its high magnetostriction (and magnetooptical activity), dysprosium, already used in liquid phase epitaxy garnet films to promote PMA, and dilution of the Fe with Al or Ga to reduce the magnetization and therefore the in-plane anisotropy which will be realized using self made PLD targets of the respective stoichiometry. Finally, by subsequent growth of topological insulators (TI), the existence of possible induced magnetism (lifting of the degeneracy) into the surface TI states will be experimentally investigated.
期刊论文(3)
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会议论文
DOI: 10.1103/physrevb.95.115428
发表时间: 2017-03
期刊: Physical Review B
影响因子: 3.7
作者: [C. Avci;A. Quindeau;M. Mann;C. Pai;C. Ross;G. Beach]
通讯作者: C. Avci;A. Quindeau;M. Mann;C. Pai;C. Ross;G. Beach
DOI: 10.1002/aelm.201600376
发表时间: 2017-01-01
期刊: ADVANCED ELECTRONIC MATERIALS
影响因子: 6.2
作者: [Quindeau, Andy, Avci, Can O., Ross, Caroline A.]
通讯作者: Ross, Caroline A.
国内基金
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