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REDOX: Decrease of simulation- and radiation-time of rad-hard circuits by optimizing of SET models

REDOX：通过优化 SET 模型减少抗辐射电路的模拟和辐射时间

基本信息

批准号：
318876990
负责人：
Professor Dr.-Ing. Rolf Kraemer
金额：
--
依托单位：
Leibniz-Institut für innovative Mikroelektronik (IHP GmbH)
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2019-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/318876990?language=en
关键词：
REDOX Decrease simulation radiation time

项目摘要

The main goal of the running REDOX project is to establish a unified framework for optimized and accurate characterization of Single Event Transient (SET) effects at the circuit level. This will help in reducing the need for extensive device simulations and irradiation experiments, and facilitate the effective development of novel rad-hard CMOS and BiCMOS libraries. To accomplish this goal, it is required to better understand the impact of all relevant irradiation, design, technological and operating parameters on the SET generation and propagation within the combinational logic, and its latching into the sequential logic.In the approved first part of the project we have investigated the SET effects in standard and non-standard logic gates, employing SPICE simulations for 250, 130 and 65 nm CMOS technologies, and TCAD simulations for 250 nm technology. The main achievement in the first phase is the establishment of two analytical models for predicting the SET robustness of standard and non-standard logic gates. In addition, we have gained substantial insight into the physical mechanisms of SET effects and the impact of irradiation, design and operating parameters on the formation of SET current and voltage pulses. Also, we have conducted detailed analysis of advanced techniques for experimental characterization of SET effects, and a first test chip for SET pulse width measurement has been designed and manufactured in IHP’s 250 nm bulk CMOS process. Based on the results achieved in the first 18 months of the project, we have several papers.We believe that the requested extension of the project would allow for a full accomplishment of the originally proposed objectives. To achieve the proposed objectives, the planned research will be focused on: (1) further improvement of the SET robustness models derived in the first phase of the project, (2) use of the acquired knowledge on SET effects to enhance existing SET current, SET voltage and SET propagation models, and (3) integration of the improved SET models into a coherent SET evaluation framework. The SET models and the complete characterization framework will be tested on selected benchmark circuits using SPICE simulations and irradiation experiments. In addition, with respect to the current state-of-the-art, we would like to slightly extend the scope of our work by addressing additional important issues which have not been addressed in the first version of the project.

正在进行的氧化还原项目的主要目标是建立一个统一的框架，以优化和准确地表征电路层面的单事件瞬态（SET）效应。这将有助于减少对大量器件模拟和辐照实验的需求，并促进新型抗辐射CMOS和BiCMOS库的有效开发。为了实现这一目标，需要更好地了解所有相关的辐照、设计、技术和操作参数对组合逻辑中SET产生和传播的影响，并将其锁存到顺序逻辑中。在项目批准的第一部分中，我们研究了标准和非标准逻辑门中的SET效应，采用SPICE模拟250、130和65纳米CMOS技术，以及TCAD模拟250纳米技术。第一阶段的主要成果是建立了两个分析模型来预测标准和非标准逻辑门的SET鲁棒性。此外，我们对SET效应的物理机制以及辐照、设计和操作参数对SET电流和电压脉冲形成的影响有了实质性的了解。此外，我们还对SET效应的实验表征的先进技术进行了详细的分析，并在IHP的250纳米体CMOS工艺中设计和制造了第一个用于SET脉冲宽度测量的测试芯片。根据项目前18个月取得的成果，我们有几篇论文。我们认为，所要求的项目延期将允许充分实现最初提议的目标。为了实现拟议的目标，计划中的研究将集中在：(1)进一步改进项目第一阶段导出的SET鲁棒性模型，(2)利用所获得的SET效应知识来增强现有的SET电流、SET电压和SET传播模型，以及(3)将改进的SET模型整合到一个连贯的SET评估框架中。SET模型和完整的表征框架将使用SPICE模拟和辐照实验在选定的基准电路上进行测试。此外，就目前的最新技术而言，我们希望通过解决项目第一版中未解决的其他重要问题来稍微扩展我们的工作范围。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Characterization of Single Event Transient Effects in Standard Delay Cells

标准延迟单元中单事件瞬态效应的表征

DOI：
10.1109/icecs49266.2020.9294817
发表时间：
2020
期刊：
2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
影响因子：
0
作者：
M. Andjelkovic;O. Schrape;A. Breitenreiter;M. Krstic;R. Kraemer
通讯作者：
R. Kraemer

Assessment of the amplitude-duration criterion for SET/SEU robustness evaluation

SET/SEU 鲁棒性评估的振幅持续时间标准评估

DOI：
10.1109/iolts.2017.8046169
发表时间：
2017
期刊：
2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)
影响因子：
0
作者：
M. Andjelkovic;M. Krstic;R. Kraemer
通讯作者：
R. Kraemer

Comparison of the SET sensitivity of standard logic gates designed in 130 nm CMOS technology

采用130 nm CMOS技术设计的标准逻辑门的SET灵敏度比较

DOI：
10.1109/miel.2017.8190106
发表时间：
2017
期刊：
2017 IEEE 30th International Conference on Microelectronics (MIEL)
影响因子：
0
作者：
M. Andjelkovic;M. Krstic;R. Kraemer
通讯作者：
R. Kraemer

A Critical Charge Model for Estimating the SET and SEU Sensitivity: A Muller C-Element Case Study

用于估计 SET 和 SEU 灵敏度的关键电荷模型：Muller C 元件案例研究

DOI：
10.1109/ats.2017.27
发表时间：
2017
期刊：
2017 IEEE 26th Asian Test Symposium (ATS)
影响因子：
0
作者：
M. Andjelkovic;V. S. Veeravalli;M. Krstic;R. Kraemer;A. Steininger
通讯作者：
A. Steininger

Use of Decoupling Cells for Mitigation of SET Effects in CMOS Combinational Gates

使用去耦单元减轻 CMOS 组合门中的 SET 效应

DOI：
10.1109/icecs.2018.8617996
发表时间：
2018
期刊：
2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
影响因子：
0
作者：
M. Andjelkovic;M. Babic;O. Schrape;M. Krstic;R. Kraemer
通讯作者：
R. Kraemer