Staggered-Gated Bi-Layer Flexible Inverters with Transferred Highly Oriented Polymer Semiconductors

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Large-area with >40 cm2 of floating films were fabricated with oriented polymeric semiconductors. To fabricate staggered-gated bi-layered inverter geometry, optimization of individual n-type and p-type polymer film and transistor was carried successfully with commercially available n-type and p-type polymers like PQT, PBTTT,DPPT-TT and PNDI(2OD)2T. For the first time, we successfully prepared oriented floating films of n-type polymer PNDI(2OD)2T which was very crucial for the proposed CMOS inverter. For staggered-gated structure, different polymer dielectrics were utilized with basic p-type and n-type polymers for top-gated and bottom-gated architecture. These results reflect the possibility to realize printable CMOS devices using oriented polymeric semiconductors proposed in this project.