ダンベル型グラフェンナノリボンの電子物性解析に基づく高感度ひずみセンサの開発

基于哑铃形石墨烯纳米带电子特性分析的高灵敏度应变传感器的开发

• 批准号: 19J12755
• 负责人: 張 秦強
• 金额: $ 1.47万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2019
• 资助国家: 日本
• 起止时间: 2019-04-25 至 2021-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19J12755/
• 关键词: dumbbell-shape; graphene nanoribbon; strain-controlled; Schottky barrier; interface; strain sensor; dumbbell-shape structure; localized properties

The gradient Schottky barrier around the atomic seamless interface can be controlled by applying appropriate strain and the stable electronic performance of dumbbell-shape graphene nanoribbon (DS-GNR)-base strain sensors can be obtained regardless of the width of the graphene nanoribbon (GNR) in the sensing segment of DS-GNR. The optimized structure of DS-GNR with metallic-metallic interface around the jointed area exhibits stable piezoresistive property in the narrow segment at lower strain range. It is deemed to the disappearance of the Schottky barrier. However, the complicated strain-induced change behavior appeared in the metallic-semiconductive interface due to the existence of the gradient Schottky barrier around the jointed area at low strain range. The single GNR possesses a large strain range as proved by several previous researchers. In this study, the author found that the large gradient Schottky barrier can be minimized by applying an appropriate tensile strain and the stable performance of DS-GNR with metallic-semiconductive interface can be attained at a larger strain range.The analysis results in this study indicate that it has a great potential to apply DS-GNRs for development of highly sensitive, stable, and reliable next-generation wearable strain sensors for real time health monitoring and smart point of care devices. The strain-induced change of electronic properties of DS-GNR can be applied on other specific applications such as bio-chemical sensors for gas- and viruses- detecting and artificial neuro network by mimicking the human synapse signal.

可以通过施加适当的应变和哑铃形石墨烯纳米替烯（DS-GNR） - 碱基应变传感器的稳定电子性能来控制原子无缝界面周围的梯度Schottky屏障，而无论在DS-gnr的传感段中，无论是纳米替宾（GNR）的宽度，即DS-GNR的优化结构在较低的应变范围内窄段中具有金属金属界面的DS-GNR稳定的压电性能。它被认为是肖特基屏障的消失。然而，由于在低应变范围内的接头区域周围存在梯度肖特基屏障，因此在金属 - 气流界面中出现了复杂的应变诱导的变化行为。单个GNR具有较大的应变范围，如以前的几位研究人员所证明的那样。在这项研究中，作者发现，可以通过施加适当的拉伸应力来最大程度地限制较大的坡度屏障，并且在较大的应变范围内，可以在较大的应变范围内实现DS-GNR的稳定性能，并且可以在较大的应变范围内获得。设备。 DS-GNR的应变诱导的电子性质变化可以应用于其他特定应用，例如通过模仿人类突触信号来进行气体和病毒检测和人工神经网络的生物化学传感器。

项目成果

A First Principle Study on the Localized Electronic Band Structure of a Single Long Graphene Nanoribbon with Graphene Electrodes

石墨烯电极单条长石墨烯纳米带局域电子能带结构的第一性原理研究

• 发表时间: 2019
• 作者: Eri Kiyoshige;Mai Kabayama;Yasushi Takeya;Yoichi Takami;Shuko Takeda;Yasuyuki Gondo;Hiromi Rakugi;Kei Kamide.;Qinqiang Zhang;Qinqiang Zhang
• 通讯作者: Qinqiang Zhang

Theoretical Study of Heterojunction-Like Electronic Properties Between a Semiconductive Graphene Nanoribbon and a Metallic Graphene for Highly Sensitive Strain Sensors

用于高灵敏应变传感器的半导体石墨烯纳米带和金属石墨烯之间的类异质结电子特性的理论研究

• 发表时间: 2020
• 作者: Takuya Kudo ;Qinqiang Zhang ;Ken Suzuki ;Hideo Miura;Qinqiang Zhang
• 通讯作者: Qinqiang Zhang

10.1115/IMECE2020-23782A First-principles Study on the Strain-induced Localiz10.1115/IMECE2020-23782ed Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain Sensors

10.1115/IMECE2020-23782A 高灵敏应变传感器哑铃形石墨烯纳米带应变诱导局部化电子特性的第一性原理研究10.1115/IMECE2020-23782ed

• DOI: 10.23919/sispad49475.2020.9241686
• 发表时间: 2020
• 期刊: Proceedings of 2020 International Conference on Simulation of Semiconductor Processes and Devices
• 作者: Qinqiang Zhang;Ken Suzuki;Hideo Miura
• 通讯作者: Hideo Miura

Theoretical Study of the Edge Effect of Dumbbellshape Graphene Nanoribbon with a Dual Electronic Properties by First-principle Calculations

双电子哑铃形石墨烯纳米带边缘效应的第一性原理计算理论研究

• DOI: 10.1109/sispad.2019.8870398
• 发表时间: 2019
• 期刊: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• 作者: Xiangyu Qiao;Qinqiang Zhang;Ken Suzuki;Qinqiang Zhang ; Takuya Kudo ; Jowesh Gounder ; Ying Chen ; Ken Suzuki ; Hideo Miura
• 通讯作者: Qinqiang Zhang ; Takuya Kudo ; Jowesh Gounder ; Ying Chen ; Ken Suzuki ; Hideo Miura

第一原理解析に基づくダンベル型グラフェンナノリボン電子密度分布の歪み依存性の支配因子の検討

基于第一性原理分析的哑铃形石墨烯纳米带电子密度分布应变依赖性控制因素研究

• 发表时间: 2020
• 作者: Yoshimoto S;Haran KP;Covo M;Mason NJ;Qinqiang Zhang;張秦強
• 通讯作者: 張秦強