ダンベル型グラフェンナノリボンの電子物性解析に基づく高感度ひずみセンサの開発

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The gradient Schottky barrier around the atomic seamless interface can be controlled by applying appropriate strain and the stable electronic performance of dumbbell-shape graphene nanoribbon (DS-GNR)-base strain sensors can be obtained regardless of the width of the graphene nanoribbon (GNR) in the sensing segment of DS-GNR. The optimized structure of DS-GNR with metallic-metallic interface around the jointed area exhibits stable piezoresistive property in the narrow segment at lower strain range. It is deemed to the disappearance of the Schottky barrier. However, the complicated strain-induced change behavior appeared in the metallic-semiconductive interface due to the existence of the gradient Schottky barrier around the jointed area at low strain range. The single GNR possesses a large strain range as proved by several previous researchers. In this study, the author found that the large gradient Schottky barrier can be minimized by applying an appropriate tensile strain and the stable performance of DS-GNR with metallic-semiconductive interface can be attained at a larger strain range.The analysis results in this study indicate that it has a great potential to apply DS-GNRs for development of highly sensitive, stable, and reliable next-generation wearable strain sensors for real time health monitoring and smart point of care devices. The strain-induced change of electronic properties of DS-GNR can be applied on other specific applications such as bio-chemical sensors for gas- and viruses- detecting and artificial neuro network by mimicking the human synapse signal.