Tunable narrowband thermal emitter for minimization of disease screening device

在这一年中，我们进行了优化，模拟，制造和实验过程。首先，我们通过调整DBR层数和DBR材料来优化结构，使结构内的光学Tamm状态保持在充分发展的状态。因此，通过模拟，我们发现在发射谱中有一个明显的共振峰，其质量因子（q因子）高达1908。Ge不仅用作DBR的材料，而且利用其热光学效应具有波长可调性。在维持最大电场的位置设计温度敏感的Ge层，使Ge的折射率变化最大程度地影响整个结构的光学行为。然后，利用射频溅射技术制备了该器件。为了降低其内应力，我们还对沉积后的样品进行了退火处理。在温度高达150℃时进行发射度测量，加热后在发射光谱中观察到一个尖锐的峰，其q因子在780左右。

Within this year, we have conducted the optimization, simulation, fabrication, and experiment processes. First, we optimized the structure by adjusting the DBR layer number and the DBR material, for a fully developed optical Tamm state sustained within the structure. As a result, through simulation, we demonstrated a pronounced resonance peak in emittance spectrum with a quality factor (Q-factor) as large as 1908 . Ge was used, not only as a material of the DBR, but also for wavelength tunability taking advantage of its thermo-optic effect. The temperature sensitive Ge layer was designed at the position sustaining the maximum electric field, in order to make the index change in Ge maximally influence the optical behavior of the whole structure. Then, the device has been fabricated using RF sputtering. To reduce its internal stress, we also annealed the sample after deposition. The emittance measurement was carried out at temperatures up to 150 C. Upon heating, sharp peak is observed in the emittance spectrum with a large Q-factor around 780.