Tunable narrowband thermal emitter for minimization of disease screening device

在这一年内，我们已经进行了优化、模拟、制造和实验工艺。首先，我们通过调整DBR层数和DBR材料对结构进行了优化，使结构中保持了充分发展的TAMM态。因此，通过模拟，我们在发射光谱中发现了一个明显的共振峰，其品质因数(Q因子)高达1908。Ge不仅被用作DBR的材料，还被用来利用其热光效应进行波长调谐。在保持最大电场的位置设计了温敏Ge层，以使Ge的折射率变化对整个结构的光学行为产生最大影响。在此基础上，利用射频溅射技术制作了该器件。为了减小其内应力，我们还对沉积后的样品进行了退火热处理。发射度测量在150℃以下进行，加热后在发射谱中观察到一个尖锐的峰，其大的Q因子在780左右。

Within this year, we have conducted the optimization, simulation, fabrication, and experiment processes. First, we optimized the structure by adjusting the DBR layer number and the DBR material, for a fully developed optical Tamm state sustained within the structure. As a result, through simulation, we demonstrated a pronounced resonance peak in emittance spectrum with a quality factor (Q-factor) as large as 1908 . Ge was used, not only as a material of the DBR, but also for wavelength tunability taking advantage of its thermo-optic effect. The temperature sensitive Ge layer was designed at the position sustaining the maximum electric field, in order to make the index change in Ge maximally influence the optical behavior of the whole structure. Then, the device has been fabricated using RF sputtering. To reduce its internal stress, we also annealed the sample after deposition. The emittance measurement was carried out at temperatures up to 150 C. Upon heating, sharp peak is observed in the emittance spectrum with a large Q-factor around 780.